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The new generation mobile handsets must support a large number of frequency bands and duplex offsets. Traditionally, an adaptive duplexing technique makes use of a wideband circulator to create initial isolation. A tunable duplex filter is presented in this paper, achieving the required tuning range for LTE Band 1. The demonstrated circuit is implemented in a 250nm Silicon on Sapphire (SOS) process, it provides an isolation of 19dB and 14dB at the transmit and the receive frequencies, respectively. The measured insertion loss from PA to antenna port is better than 3.8dB. The measured third-harmonic suppression is 45.9dB at an input of 24.5dBm. The implemented circuit occupies an area of 3.0mm×2.2mm. [ABSTRACT FROM PUBLISHER]

As wireless mobile applications continue to drive shrinkage of the individual components, consequently a corresponding decrease in required footprint and component thickness needs to go along with it. Over the last years, the size of power amplifier duplexer (PAD) front-end modules as well as standalone duplexers has steadily decreased. A significant portion of this shrinkage has been contributed by a decrease in BAW die size. This decrease is driven by various technology improvements. In this paper we will first discuss the introduction of on-chip capacitors. These capacitors not only allow for a reduction of the required external component count, but also for an increased degree of design freedom. Second, we will discuss how the shrinkage of reflector metal dimensions leads as a direct result to an significant reduction in die sizes. Although core technology improvements can allow for radical BAW die shrinkage, the packaging technology that comes along with the BAW die needs to contribute its share to maintain this trend. Last, a novel approach for wafer-level packaging BAW die will be presented. [ABSTRACT FROM PUBLISHER]

We have proposed surface acoustic wave (SAW) duplexer for CDMA/LTE markets. Advancements of the communication system are progressing in accordance with the increase of the data user needs. Technology that uses multi-band and simultaneous communication has been progressing. Effect of mutual interference in the mobile phone increases, deterioration of communication quality is concerned. [ABSTRACT FROM PUBLISHER]

In the small SAW (Surface Acoustic Wave) Duplexer, improving the heat dissipation is very important. SAW Duplexer being used in RF front-end, especially Tx side, self-heating by high input power on the inter-digital transducers (IDTs) is a big issue.1) We have proposed heat dissipation improvement by Chip Size SAW Device (CSSD) structure.2) In the CSSD structure, heat dissipation was improved by adding a new path that is from the die to the package through the sealing material. However, additional improvement for the heat dissipation was needed. [ABSTRACT FROM PUBLISHER]

This paper presents a performance evaluation of a class-E switched-mode power amplifier, designed in pHEMT GaAs technology, loaded by a high-isolation and low-Insertion Loss (IL) duplexer. This duplexer is based on Surface Acoustic Wave (SAW) technology. Measurements of the duplexer and layout of the class E PA are simulated under Agilent-ADS with a Wideband Code Division Multiple Access signal (WCDMA) in the 1.92 – 1.98 GHz band, for transmission scenario. In this band the amplifier alone achieved 75% to 82% efficiency and 23.5dBm to 24.2dBm output power. The association of the amplifier and the duplexer permitted to reach a drain efficiency of 78% while the output power is 22.7dBm at the central frequency, in the WCDMA band a minimum of 60% efficiency and 21dBm output power is maintained. [ABSTRACT FROM PUBLISHER]

Compared to the traditional metal cavity device, duplexer with TE01δ mode dielectric resonator (DR) has more advantages such as smaller size, lower insertion loss (IL), better temperature stability of resonant frequency and so on. Based on microwave theory, this paper proposes a new type of duplexer which partly consists of TE01δ mode DR. It takes full advantage of the performance of different materials to make it conform as closely as possible to the signal transmission characteristics of the different frequency bands and to optimize the quality of the transmission channel. The design of TE01δ mode DR is presented at first of this paper. Then it gets the equivalent circuit of duplexer by formula deduction. The duplexer is simulated by using HFSS and CoupleFil software and it comes to conclusion that the test and the simulation results are consistent at last. In the fields of engineering of application, this design program can improve the performance and reduce the size of duplexer. [ABSTRACT FROM PUBLISHER]

This paper presents a cost-effective and high-performance film bulk acoustic resonator (FBAR) duplexer module for USPCS handset applications. The FBAR device uses a glass wafer level packaging process, which is a more cost-effective alternative to the typical silicon capping process. The highest insertion losses of the FBAR duplexer at the Tx and Rx bands are of 1.9 and 2.4 dB, respectively. The total thickness of the duplexer is 1.2 mm, including the glass-wafer bonded Tx/Rx FBAR devices, PCB board, and transfer molding material. [ABSTRACT FROM PUBLISHER]

Duplexers are commonly used in all mobile communication devices such as cellular phone. The typical duplexers used are expensive duplexers that use the semiconductor process such as SAW duplexer and FBAR. This study designed a low-priced duplexer using the LTCC lamination process. Generally, the duplexer filter built with LTCC (low-temperature co-fired ceramic) lamination process technology uses strip line resonator to construct the filter. This type of strip line structure shows poor quality factor(Q) compared to the currently used SAW duplexer or FBAR; hence the difficulty in constructing a duplexer with rapid skirt characteristic in narrow band with low loss. This study constructed a duplexer by combining a band pass filter and a diplexer to simplify the circuit and a 3×2.5×1.2 mm3 miniaturized 2GHz band duplexer. Also it can be embedded into the complicated MIMO FEM(Front end module). [ABSTRACT FROM PUBLISHER]

This paper describes the characteristics of boundary acoustic wave employing novel multi-layer metal electrode structure and a miniaturized UMTS Band II duplexer using this structure. For the electrode, Pt/Al/Pt is adopted and k2 and TCF dependency on the position of the total electrode gravity center is investigated, both theoretically and experimentally. It was found that selecting the contents of metal material is very effective to control k2 and TCF. Small sized and low profile UMTS Band II duplexer has been developed. Its size is 2.0×1.6×0.4 mm3 and good temperature characteristics are obtained, which is almost zero TCF. [ABSTRACT FROM PUBLISHER]

This paper describes a design technique to enhance isolation of acoustic duplexers in the single-ended and the differential modes for a so-called “inter-stage SAW-less” radio frequency (RF) front-end of cellular phones. The leakage signal from the Tx to the Rx ports existing inside the duplexer, which degrades the isolation characteristics, is cancelled out by utilizing a proposed circuit topology and by performing careful design of the whole duplexer structure. The principle directly enhances the single-ended isolation, but it also contributes to improve the differential mode isolation. The prototypes for the single-ended and differential duplexers exhibit isolation higher than 70 dB and 65 dB, respectively, in the Tx band for UMTS Band 1 application. [ABSTRACT FROM PUBLISHER]

This paper describes the concept, fabrication process technologies and performance of a novel 3D heterogeneous integration method developed for RF applications. This method combines the advantages of LTCC, passive integration and MEMS technologies and is promising for the miniaturization and multifunction of future RF-modules. The basic concept is to form a large-size LTCC wiring wafer, and then to form high-Q passives or MEMS directly on the wafer surface. Other functional devices such as the ICs, SAWs are mounted above the surface-formed devices. LTCC wafer can provide dense interconnects and backside pads to provide input and output paths. All of the fabrication processes are carried out at wafer level, which leads to high productivity. A miniaturized duplexer and a MEMS tunable filter were constructed to demonstrate its feasibility and effectiveness. [ABSTRACT FROM PUBLISHER]

Signal combiners are an important part of high frequency electronics. Generally in higher frequencies, antennas have large bandwidths and lots of systems need a single antenna. In order to combine different frequencies, traditional power combiners such as Wilkinson, Hybrid Coupler etc. are not efficient. In this paper, a 3 bands combiner (triplexer) which consists of hairpin type band pass filters is presented. Bands of triplexer are 3.4–3.7 GHz, 3.9–4.25 GHz and 4.45–4.9 GHz. Triplexer is designed as microstrip lines on a Taconic substrate by using AWR design tool. [ABSTRACT FROM PUBLISHER]

In this paper, a miniatuirized duplexer for the lower-half UWB is implemented. Firstly, to reduce the size, novel metamaterial CRLH bandpass filter structures are designed for the duplexer of the 2 channels (3.2GHz ∼ 3.7GHz and 4.3GHz ∼ 4.7GHz). Secondly, they are further changed to have transmission zeros to improve channel selectivity. Finally, the optimized geometry of the duplexer is obtained to hold the proposed bandpass filters. The presented design methodology is validated through the EM simulation and the measurement. Besides, the performance and size-reduction effect of proposed design is addressed. [ABSTRACT FROM PUBLISHER]

In this paper, a novel microwave planar integration scheme is proposed based on SIW technology. All the passive components in RF transceiver are implemented using SIW, including antenna, duplexer, TX/RX filters and LO power divider. A demonstration X-band transceiver is designed in a single layer printed circuit board. The design of SIW components and RF/IF circuits are discussed, as well as various aspects of system integration. To author's knowledge, this work is the first to demonstrate a fully integrated solution based on SIW-like technology. [ABSTRACT FROM PUBLISHER]