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Your search keyword '"Kop’ev, P. S."' showing total 20 results
Start Over Author "Kop’ev, P. S." Publication Type Conference Materials
20 results on '"Kop’ev, P. S."'

12. Quantum dot lasers: Theory and experiment.

Author

Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N. N., Ribbat, Ch., Sellin, R., Alferov, Zh. I., Kop’ev, P. S., Maximov, M. V., Ustinov, V. M., Zhukov, A. E., and Lott, J. A.

Subjects
QUANTUM dots, LASERS
Abstract

Using of structures with size quantization in all three directions, or quantum dots (QD's) allows exciting possibilities in device engineering. Semiconductor heterostructures with self-organized QDs have experimentally exhibited properties expected for zero-dimensional systems. When used as active layer in the injection lasers, these advantages help to strongly increase material gain and differential gain, to improve temperature stability of the threshold current, and to provide improved dynamic properties. Optimization of deposition parameters can ensure that the self-organized islands are small (∼10 nm), have a similar size and shape and form dense arrays. Saturation material gain as high as 150000cm[sup -]¹ as compared to QW values of about 3000cm[sup -]¹. Maximum differential gain reported for QD lasers approaches 10[sup -12] cm² and exceeds the QW laser values by about three orders of magnitude. Direct observation of relaxation oscillations reveals present cutoff frequencies close to 10 GHz. High internal (>96%) and differential (70%) efficiencies at 300 K are realized for QD lasers emitting in the 0.94-1.15 µm range. GaAs-based lasers for the 1.3 µm range with low J[sub th] (80 A/cm², cavity length 1.9 mm) at room temperature (RT) are realized using lnAs/InGaAs/GaAs QDs obtained by activated spinodal decomposition. Differential efficiency is 55% and internal losses are 1.5 cm[sup -]¹. 3W CW operation at RT is achieved. 1.3 µm GaAs-based QD VCSELs (300K, I[sub th]=1.8 mA, η[sub diff]>40%) are realized. [ABSTRACT FROM AUTHOR]

Published
2001

13. InAs/GaAs quantum dot injection lasers

Author

Grundmann, M., primary, Ledenstov, N. N., additional, Heinrichsdorff, F., additional, Mao, M.-H., additional, Bimber, D., additional, Ustinov, V. M., additional, Kop'ev, P. S., additional, Alferov, Zh. I., additional, and Lott, J. A., additional

Published
1998
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14. InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties

Author

Bimberg, D., primary, Ledentsov, N. N., additional, Kirstaedter, N., additional, Schmidt, O., additional, Grundmann, M., additional, Ustinov, V. M., additional, Egorov, A. Yu., additional, Zhukov, A. E., additional, Maximov, M. V., additional, Kop'ev, P. S., additional, Alferov, Zh. I., additional, Ruvimov, S. S., additional, Gosele, U., additional, and Heydenreich, J., additional

Published
1995
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17. OPTICAL SPECTROSCOPY AND TRANSPORT IN SHORT-PERIOD SUPERLATTICES.

Author

Uraltsev, I. N., Ivohenko, E. L., Koohereshko, V. P., Kop'ev, P. S., Suris, R. A., Vasiliev, A. M., and Yakovlev, D. R.

Subjects
OPTICAL spectroscopy, OPTICAL transport networks, SUPERLATTICES, QUANTUM wells, MAGNETIC fields, PHOTONS
Published
1990

19. Edge-Channel Photo-Effect In Asymmetric Two-Dimensional Systems.

Author

Vasilyev, Yu. B., Meltser, B. Ya., Ivanov, S. V., Kop'ev, P. S., Stellmach, C., Gouider, F., and Nachtwei, G.

Subjects
QUANTUM Hall effect, SUBMILLIMETER waves, MAGNETIC fields, HOLES (Electron deficiencies), TWO-dimensional models, LANDAU levels
Abstract

We report on the photo-effect in an asymmetric two dimensional electron system where edge currents are induced by homogeneous terahertz (THz) radiation in tilted magnetic field without any external bias. We discuss the features of the observed effect and its mechanism taking into account properties of edge states in magnetic fields. The process is understood as the quantum Hall effect associated with electron-hole pairs generated in Landau levels by THz radiation under CR conditions. [ABSTRACT FROM AUTHOR]

Published
2011
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20. Mie Resonant Absorption and Infrared Emission in InN Related to Metallic Indium Clusters.

Author

Shubina, T. V., Ivanov, S. V., Jmerik, V. N., Solnyshkov, D. D., Kop'ev, P. S., Vasson, A., Leymarie, J., Kavokin, A., Amano, H., Kamiyama, S., Iwaya, M., Akasaki, I., Lu, H., Schaff, W. J., Kasic, A., and Monemar, B.

Subjects
MOLECULAR spectroscopy, SPECTRUM analysis, EXCITON theory, INDIUM compounds, ABSORPTION spectra
Abstract

We demonstrate that resonant optical losses related to metallic In clusters can significantly modify absorption spectra of InN with any optical gap. Thermally detected absorption spectra with a pronounced Mie resonance are successfully simulated using a dielectric function of InN corresponding to the 1.2–1.4 eV optical gap. The resonance is observed in spectra of conventional absorption at low temperatures being smoothed out at room temperature. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]

Published
2005
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