47 results on '"Mitsuhashi, R."'
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2. Gate Leakage Advantage of LaO Incorporation for Vt Tuning in High-k nMOSFETs over Metal Gate WF Control
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3. Hyperspectral sensor HSC3000 for nano-satellite TAIKI
4. Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications
5. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
6. Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
7. Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
8. Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window
9. Low Vt Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases
10. Nitrogen Profile and Dielectric Cap Layer (Al2O3, Dy2O3, La2O3) Engineering on Hf-Silicate
11. A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack
12. Oxygen-Vacancy-Induced Vt shift in La-containing Devices
13. Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
14. Ni-based FUSI gates: CMOS Integration for 45nm node and beyond
15. Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
16. 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric
17. Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation
18. In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system
19. Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition
20. A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process
21. Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks
22. Thermal Instability of Poly-Si Gate Al2O3 MOSFETs
23. A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process
24. Attitude estimation of nano-satellite “HIT-SAT” using received power fluctuation by radiation pattern.
25. Time-dependent dielectric breakdown of HfAlOx/SiON gate dielectric.
26. Development of an avatar language chatting system and its communication experiment using a Japanese communications satellite
27. Comparison of multiple satellites diversity characteristics between rain and snow attenuations for 14/12 GHz band
28. Detection of a straight metal tube by snow search radar
29. Time-dependent dielectric breakdown of HfAlOx/SiON gate dielectric
30. Multiple satellites diversity characteristics in snowing climate and system application for 14/12 GHz band
31. AlN film growth under N/sub 2//sup +/ ion bombardment onto Al surface
32. Nanosatellite mothership-daughtership experiment by Japanese universities
33. Ni-FUSI on high-k as a candidate for 65nm LSTP CMOS
34. Low Power CMOS Featuring Dual Work Function FUSI on HfSiON and 17ps Inverter Delay
35. Novel process to pattern selectively dual dielectric capping layers using soft-mask only.
36. Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window.
37. Low Power CMOS Featuring Dual Work Function FUSI on HfSiON and 17ps Inverter Delay.
38. Ni-FUSI on high-k as a candidate for 65nm LSTP CMOS.
39. A study on the Vth shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process.
40. CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON.
41. Nanosatellite mothership-daughtership experiment by Japanese universities.
42. AlN film growth under N/sub 2//sup +/ ion bombardment onto Al surface.
43. Long distance site-diversity (SD) characteristics by using new measuring system.
44. Detection of a straight metal tube by snow search radar.
45. Multiple satellites diversity characteristics in snowing climate and system application for 14/12 GHz band.
46. Comparison of multiple satellites diversity characteristics between rain and snow attenuations for 14/12 GHz band.
47. Long distance site diversity characteristics measurement results via JCSAT by using one Earth station measuring method.
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