651 results on '"Nishimura T"'
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2. OCDE/NEA-ARC-F Project: Unit1 and Unit3 Hydrogen Explosion Analysis -- Lessons Learned and Perspectives
3. Accelerating and Optimizing Oil and Gas Exploration Planning Using Quantum Inspired Classical Computing or Vector Annealing
4. Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport
5. Serum Krebs Von Den Lungen-6 Level in the Prognosis, Disease Progression, and Treatment of Mycobacterium Avium Complex Lung Disease
6. Host Genetic Analysis of Pulmonary NTM Disease and Non-CF Bronchietasis
7. Vanishing Skyrmion Hall Effect at the Angular Momentum Compensation Temperature of a Ferrimagnet
8. Spin Wave Propagation in Ferrimagnetic GdCo
9. Impact of Scaling the VO2-Channel Mott Transistor below Material Correlation Length
10. 391 Development of the comprehensive score for financial toxicity (COST) tool and assessment of financial toxicity in patients with gynecologic cancer in japan
11. Genome-Wide Association Study in Patients with Pulmonary Mycobacterium Avium Complex Disease
12. Role of Bi, Sb and In in microstructure formation and properties of Sn-0.7Cu-0.05Ni-X BGA interconnections
13. Impacts of doped element on ferroelectric phase stabilization in HfO2 through non-equilibrium PDA
14. Integrate-and-Fire of Input Spike Signals with High Scalability and Low Energy Consumption Using VO2 Metal-Insulator Transition
15. Direct measurement of internal potential in ferroelectric/paraelectric stack for studying Negative Capacitance effects
16. Effect of internal-strain caused by monoclinic phase formation on ferroelectric phase formation of ZrO2
17. Thermal oxidation kinetics of Ge under high pressure O2
18. Impact of "struggle for oxygen" at oxidized interface on SiGe gate stacks
19. New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching
20. High on/off ratio (>10) ferroelectric tunnel junctions (FTJs) with ultrathin Y-doped HfO2
21. Atomically flat interface formation on Ge(111) in oxidation process
22. Junctionless ferroelectric FET with doped HfO2 on n+-TiO2for three-terminal nonvolatile switch
23. Characterization of SiO2/SiC interface using a Laser Terahertz Emission Microscope
24. Controlling BGA joint microstructures using seed crystals
25. Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials
26. Effect of reflow conditions on the intermetallic layer in solder joints
27. Optimization of Ni and Bi levels in Sn-0.7Cu-xNi-yBi solders for improved interconnection reliability
28. Anomalous Spectral Shape Evolution of Ge Raman Shift in Oxidation of SiGe
29. Potential Influence of Surface Atomic Disorder on Fermi-level Pinning at Metal/SiGe Interface
30. Sub-nm EOT ferroelectric HfO2 on p+Ge with highly reliable field cycling properties
31. Influence of leaves, branches and trunks on the propagation loss in 920-MHz on a mulberry farm
32. Thickness-dependent ferroelectric phase evolution in doped HfO2
33. Direct Evidence of 3-nm-thick Ferroelectric HfO2
34. A new kinetic model for thermal oxidation of Ge
35. Application of VO2 metal-insulator transition to capacitor-less neuron circuits
36. Generalized Picture of Work Function of a Metal with Schottky Interface
37. The effect of the nickel underplate on the heat resisting properties of silver plated copper alloy contacts
38. Effects of Bi in Sn-Cu based lead-free solder alloys and interconnects
39. Role of Bi in microstructure formation of Sn-Cu-Ni based BGAs on Cu metallizations
40. Functional passive material VO2 for analogue signal processing with high-speed, low power, and robust performance
41. General relationship for cation and anion doping effects on ferroelectric HfO2 formation
42. Nearly Pinning-free Ohmic Contact at Bismuth/n-Silicon Interface
43. Control of Fermi Level Pinning at Metal/Ge Interface Based on a Reconsideration of Metal-induced Gap States Model
44. Record-high On/Off Current Ratio in Ge Planar n+/p Junctions with Gate Stack Passivation Scheme
45. Opportunity of Ferroelectric Phase Formation in Nitrogen-doped HfO2
46. Tunneling Electro-resistance Effect in Ultra-thin Ferroelectric HfO2 Junctions
47. Time Response of Gate-Controlled Metal-Insulator Transitions in Ultrathin VO2 Channel
48. Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions
49. Influence of Bi additions on the distinct βSn grain structure of Sn-0.7Cu-0.05Ni-xBi (x = 0–4wt%)
50. Electrical characterisation of ZnO microvaristor materials and compounds
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