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A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200–500 keV helium ions to a fluence range of 2–4×1016 He+/cm2 at room temperature through masks of Ni mesh (40 μm opening) or stainless steel wire (50 μm in diameter), and subsequent rapid thermal annealing at 350–500□ resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined. [ABSTRACT FROM AUTHOR]

Despite the challenges associated with the cost and technological innovation, the semiconductor industry has introduced nanoelectronics into the market place. By extending traditional CMOS (complimentary metal oxide semiconductor transistors) through new materials in both the devices and on-chip interconnect, planar CMOS is already manufactured with transistor gate lengths less than 50 nm. Further extending CMOS will not only require new materials, but it may also drive the use of new non-planar device structures for transistors and new approaches for on and off-chip interconnection. At some point, CMOS extension may no longer be possible, and then a new switch would be necessary. The transition between CMOS extension and planar CMOS could involve the gradual incorporation of Beyond CMOS technology. The number of candidates continues to grow even as some possible technology is removed from consideration. Characterization and Metrology is finding each step in this transition to be a great challenge. This paper overviews the characterization and metrology necessary for both CMOS extension and beyond CMOS semiconductor technology. The International Technology Roadmap for Semiconductors is used a guide that provides a roadmap for both metrology and process technology that extends to beyond CMOS materials and devices.(1) [ABSTRACT FROM AUTHOR]

A facile radiation method was developed to obtain micro-sized poly (methyl methacrylate) (PMMA) particles and create patterned coating on different substrates by a synchrotron x-ray induced dispersion polymerization. The polymerization of MMA monomer and well defined patterning was successfully realized. The produced PMMA particles and patterning were characterized by Fourier transformation infrared (FTIR), 1H-Nuclear Magnetic Resonance (NMR), and Scanning Electron Microscope (SEM). The observed patterning contrast essentially derived from a variation of size, density and morphology of particles and the type of substrate materials used. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]

A two-dimensional array of a 10-μm-diameter Ti/Au disk with a pitch of 50 μm was prepared on a glass substrate by electron-beam lithography. Titanium-oxide nanostructures were fabricated by oxidation and annealing of the array. Field-emission current was observed at an applied electric field over approximately 10 V/μm. [ABSTRACT FROM PUBLISHER]

We investigate the initial stage of the two-dimensional to three-dimensional transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, truncated pyramids after optimized growth of a Si buffer layer, the Ge wetting layer develops a complex morphology consisting exclusively of {105} and (001) facets. These results are attributed to a strain-driven step-meandering instability on the faceted sidewalls of the pits, and a step-bunching instability at the sharp concave intersections of these facets. Although both instabilities are strain driven, their coexistence becomes mainly possible by the geometrical restrictions in the pits. It is shown that the morphological transformation of the pit surface into low-energy facets has strong influence on the preferential nucleation of Ge islands at the flat bottom of the pits. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]

We investigate how electron-beam lithography can be applied to pattern Mn12-acetate thin films produced by a solution evaporation technique. The low temperature magnetic ac-susceptibility data of the powder sample extracted from a film dipped into acetone indicate that some of the molecules in the film are deformed by acetone treatment concluding that acetone is not a proper chemical for the lift-off process, a crucial step in the patterning procedure. © 2006 American Institute of Physics [ABSTRACT FROM AUTHOR]