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Start Over Author "Phillips, Jim" Publication Type Conference Materials
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7. Minimization of mechanical and chemical strain at dielectric-semiconductor and internal dielectric interfaces in stacked gate dielectrics for advanced CMOS devices.

Author

Lucovsky, Gerry, Phillips, Jim, and Thorpe, Mike

Subjects
DIELECTRIC devices, INTEGRATED circuits
Abstract

This paper identifies fundamental aspects of Si-dielectric and internal dielectric interfaces that limit the ultimate performance of Si field effect transistor, FET, devices for scaled complementary metal oxide semiconductor, CMOS, integrated circuits. Three different interface limitations are discussed: i) residual suboxide bonding at Si-SiO[sub 2] interfaces, ii) bond induced mechanical strain at Si-Si[sub 3]N[sub 4] and SiO[sub 2]-Si[sub 3]N[sub 4] interfaces, and iii) charged defects associated with heterovalent bonding at Si-high-k oxide and silicate dielectric interfaces. [ABSTRACT FROM AUTHOR]

Published
2001

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