70 results on '"Rabkowski, Jacek"'
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2. Real EOFF as a factor in design of soft-switched DC-DC converters with SiC MOSFET power modules
3. Continuous operation of medium voltage SiC power modules in the test circuit
4. Advanced charging system with bipolar DC-link and energy storage
5. Experimental validation of 20 kW EV charger module based on Vienna rectifier and series-resonant dual active bridges
6. Battery Charging System with Three-level ANPC Converter Operating at Variable Bipolar DC-link
7. Single-, two-and three-phase operation of the EV charger based on four-wire Vienna rectifier and two isolated DC-DC converters
8. High-Frequency SiC-Based Medium Voltage Quasi-2-Level Flying Capacitor DC/DC Converter With Zero Voltage Switching
9. Grid-frequency Vienna rectifier and isolated current-source DC-DC converters for efficient off-board charging of electric vehicles
10. Parallel-connected current source rectifiers as the input stage of the off-board EV battery charger
11. Impact of a gate drive on performance of three-phase inverters based on 3.3 kV SiC MOSFETs
12. Medium voltage power switch based on 1.7 kV SiC MOSFETs connected in series inside power modules
13. Design of a High-Frequency Improved Current-Fed Quasi Z-Source Inverter based on SiC devices
14. SiC-based three-phase Quasi-Z-Source Inverter versus the two-stage topology - a comparison
15. Loss-oriented asymmetrical PWM technique for high-frequency impedance source converters
16. Experimental study on fast-switching series-connected SiC MOSFETs
17. Study on low-capacitance inductors for a high-frequency Quasi-Z-source inverter
18. High-frequency isolated DC-DC converter with GaN HEMTs
19. Symmetrical switching patterns and an adaptive modulator for three-phase quasi-Z-source inverters
20. SiC-based T-type modules for multi-pulse inverter with coupled inductors
21. Hard and soft switching operation of the half-bridge based on 900V SiC MOSFETs
22. Evaluation of GaN HEMTs for high-voltage stage of isolated DC-DC converters
23. The 10 kVA SiC-based grid connected AC/DC converter with extended functionalities — Experimental investigation
24. Operation modes of the GaN HEMT in high-frequency half-bridge converter
25. Study on power losses of the full soft-switching current-fed DC/DC converter with Si and GaN devices
26. Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction
27. Experimental investigations on the grid-connected AC/DC converter based on three-phase SiC MOSFET module
28. Power converters with Silicon Carbide devices
29. Switched-capacitor current-fed quasi-Z-source inverter
30. Design of a three-phase AC/DC converter with paralleled SiC MOSFETs
31. High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications
32. Design issues of the high-frequency interleaved DC/DC boost converter with Silicon Carbide MOSFETs
33. Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection
34. An experimental analysis on how the dead-time of SiC BJT and SiC MOSFET impacts the losses in a high-frequency resonant converter
35. Switching performance of parallel-connected power modules with SiC MOSFETs
36. SiC-based Support Converter for passive front-end AC drive applications
37. Experimental investigations on the grid-connected AC/DC converter based on three-phase SiC MOSFET module.
38. Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction.
39. Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs
40. A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors
41. Conducted EMI from SiC BJT boost converter and its dependence on the output voltage, current, and heatsink connection
42. Dual-function gate driver for a power module with SiC junction field transistors
43. Design considerations for a self-powered gate driver for normally-ON SiC junction field-effect transistors
44. Concept of the bridge leg with mixed normally-ON & normally-OFF SiC JFETs
45. A 6kW, 200kHz boost converter with parallel-connected SiC bipolar transistors
46. A simple high-performance low-loss current-source driver for SiC bipolar transistors
47. The role of the parasitic capacitance of the inductor in boost converters with normally-on SiC JFETs
48. Experimental comparison of different gate-driver configurations for parallel-connection of normally-on SiC JFETs
49. Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%
50. Silicon carbide inverter with two series Z-networks
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