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2. First Demonstration of True 4-bit Memory with Record High Multibit Retention >103s and Read Window >105 by Hydrogen Self-Adaptive-Doping for IGZO DRAM Arrays

6. Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

8. Record 7(N)+7(P) Multiple VTs Demonstration on GAA Si Nanosheet n/pFETs using WFM-Less Direct Interfacial La/Al-Dipole Technique

17. Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs

19. A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs

24. Improved Electrical Characteristics of P-type Tunnel Field-Effect Transistor With Source-Pocket Junction Formed Using High-Angle Implantation

28. Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

29. Si Nanowire Biosensors Using a FinFET Fabrication Process for Real Time Monitoring Cellular Ion Actitivies

32. Self-aligned metallic source and drain fin-on-insulator FinFETs with excellent short channel effects immunity down to 20 nm gate length

35. FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin

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