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Indium oxide is a wide band gap semiconducting oxide (3.2-3.7eV) and researched extensively for the use as a transparent conducting oxide due to its good chemical stability and transparency to visible light region. In this work, In2O3 thin films prepared by plasma enhanced atomic layer deposition on various substrates were characterized in terms of electrical transport properties and shown to exhibit a wide range of conductivity. The electrical and optical properties of In2O3 thin films were studied using Hall-effect and UV-Vis Spectroscopy measurements. A number of In2O3 samples were irradiated with different wavelength light and the change in the electrical properties during illumination was monitored. Several orders of magnitude of photoconductivity and persistent photoconductivity were observed in some films and their origins were investigated.