1. Low-temperature wafer-wafer bonding for particle detection
- Author
-
Wüthrich, Johannes; id_orcid 0000-0002-7522-8160
- Subjects
- Pixel detector, Radiation detectors, Wafer-wafer bonding, Surface activated bonding, Transient current technique, Shockley-Ramo theorem, Physics
- Abstract
Given the omnipresence and economical availability of silicon semiconductor processes, it is no surprise that direct detection particle pixel detectors are commonly fabricated using these processes. However, silicon is not the ideal sensor material for certain applications, such as X-ray imaging, due to its low stopping power of higher energy particles. For these applications, high-Z semiconductor materials, e.g., GaAs, SiGe and CdZTe, enable a more efficient conversion of incident particles into electrical signals. For economic reasons, it is not feasible to implement the highly integrated detector electronics in such high-Z materials. Therefore, in order to build detectors using these materials, one has to combine a high-Z sensor layer with the readout electronics implemented in silicon. Traditionally, such hetero-detectors are built using bump bonding, which connects the sensor and the readout electronics using a grid of small solder joints. This thesis investigates the use of surface activated wafer bonding as an alternative technique to build hetero-structure detectors. This low-temperature covalent bonding technique allows to directly fuse different semiconductor layers without any additional materials at the bonding interface. This enables the creation of hetero structures by directly bonding a high-Z sensing layer to a silicon-based readout layer. Imposed by the bonding technique, the transition between the two bonded layers is not abrupt, but includes a thin (nm) layer of amorphous material. This amorphous region has a high concentration of crystalline defects and thus influences the electrical behaviour of the assembled detectors. Previous studies proposed that the effect of these defects could be minimized by placing the P/N junction of the detector at the bonding interface. In order to investigate this claim, covalently bonded pad diodes are fabricated by bonding high resistivity P- to N-type silicon wafers as commonly used in pixelized particle detectors. TEM measurements of these samples show the formation of a ca. 3nm wide amorphous layer at the bonding interface. EDXS measurements of the samples highlight the presence of additional metal contaminants, which can be traced back to the bonding process. The feasibility of using such structures for particle detection is investigated based on TCT measurements. The TCT measurements show a one-sided depletion behaviour of the samples, whereas only the P-type wafer can be depleted. This one-sided depletion indicates that the bonding interface of the fabricated samples behaves like a highly doped N++ layer, strongly influencing the electrical behaviour of the sensor structure. Based on this observation, a model, which includes an extension to the Shockley-Ramo theorem, is developed to predict the time domain signal shape produced by particles interacting in the fabricated samples. This model is shown to accurately predict the signals measured with an Am-241 alpha-source from first principles.
- Published
- 2023