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Stacked MOS power amplifiers (PA) are commonly used in SOI nodes but also have the potential to be realized in bulk CMOS nodes. In this paper they are analyzed in millimeter wave regimes. The study focuses on the key limiting factors and in particular the optimum number of transistors from which the key performance parameters such as maximum possible operating frequency, output power, and efficiency are achieved. Based on the analysis, design trade-offs of stacked MOS PAs are presented. The frequency dependency of the optimum load presented to each stack is analyzed to express the overall performance of the mentioned PA topologies as a new optimization method. Additionally, it is shown how the optimal load variations translate into amplitude-to-amplitude/phase (AM-AM/PM) conversion distortions. The validity of the analysis is examined against simulations. The simulations are performed based on 8M1P CMOS 28nm technology and electromagnetic simulations in ADS Momentum. [ABSTRACT FROM AUTHOR]

This paper presents a compact single-ended inverter-based transceiver with swing improvement for short-reach links. The low output impedance of the transmitter enlarges the output swing and the eye size to overcome large single-ended noise while relaxed impedance matching provides good signal integrity. For good area efficiency, the proposed transmitter utilizes an inverter driver which is much smaller than the conventional source-series termination driver and thus occupies only $42.5 ~\mu \text{m}^{2}$. By taking the advantage of a large signal swing, the receiver consists of only four slicers and latches to minimize area overhead and to simplify the design. The transceiver was fabricated in 28-nm CMOS technology and tested at supply voltage of 1.13 V. The transmitter achieved a large output swing of 850 mV, which is 50.4 % larger than the conventional source-series termination transmitter. At the far-end of a channel consisting of a 1 m SMA cable and a 17 mm printed circuit board trace, the transmitter achieved eye openings of 440 mV and 234 mV at 16 Gb/s (−2.7 dB) and 20 Gb/s (−8 dB), respectively. Even with a large switching noise of 100 mV, the in-situ eye at the receiver was measured 114 mV with 7.4 dB loss. [ABSTRACT FROM AUTHOR]

A new active building block namely, subtractor connected first-generation current conveyor (S-CCI) is introduced in this paper. A simulated floating inductor (SFI) and two new quadrature oscillators (QOs) employing only one S-CCI are introduced as application examples. The introduced SFI employs two resistors with a single matching requirement and a grounded capacitor. Each of the introduced QOs has one grounded resistor, one floating resistor, and two grounded capacitors without any matching problems. Non-ideality analyses are performed. Furthermore, a third-order filter application is given. A layout of the S-CCI in $0.18 \mu \text{m}$ technology occupying the area of about $71\,\,\mu \text{m}\,\,\times 44\,\,\mu \text{m}$ is given. Also, numerous post layout simulations based on the SPICE program are accomplished. Moreover, several experiments are realized to confirm the theory. [ABSTRACT FROM AUTHOR]

With the advancement of technology, the size of transistors and the distance between them are reducing rapidly. Therefore, the critical charge of sensitive nodes is reducing, making SRAM cells, used for aerospace applications, more vulnerable to soft-error. If a radiation particle strikes a sensitive node of the standard 6T SRAM cell, the stored data in the cell are flipped, causing a single-event upset (SEU). Therefore, in this paper, a Soft-Error-Aware Read-Stability-Enhanced Low-Power 12T (SARP12T) SRAM cell is proposed to mitigate SEUs. To analyze the relative performance of SARP12T, it is compared with other recently published soft-error-aware SRAM cells, QUCCE12T, QUATRO12T, RHD12T, RHPD12T and RSP14T. All the sensitive nodes of SARP12T can regain their data even if the node values are flipped due to a radiation strike. Furthermore, SARP12T can recover from the effect of single-event multi-node upsets (SEMNUs) induced at its storage node-pair. Along with these advantages, the proposed cell exhibits the highest read stability, as the ‘0’-storing storage node, which is directly accessed by the bitline during read operation, can recover from any upset. Furthermore, SARP12T consumes the least hold power. SARP12T also exhibits higher write ability and shorter write delay than most of the comparison cells. All these improvements in the proposed cell are obtained by exhibiting only a slightly longer read delay and consuming slightly higher read and write energy. [ABSTRACT FROM AUTHOR]

In recent decades, the performance of binary computers has escalated through transistor scaling. However, due to the impotent forecasts of transistor scaling, ternary systems are regaining attention. Among many ternary device candidates, a passive device called memristor that is based on resistance switching is considered a good candidate when integrated with MOSFETs. Therefore, in this paper, we design various terna-ry logic based on memristors and MOSFETs from primitive logic to sequential logic and perform a thorough diagnosis for circuit design. We highlight design issues that should be resolved (e.g., signal distortion and high static current) and present practical solutions such as “Strength Design.” Then, we report a proper design methodology of sequential circuits considering the spike phenomena of memristor-based gates. We present 16 novel ternary logic cells and circuitry, including the design of the first balanced ternary full-adder (TFA) and memristor-based ternary pulsed-latch (MTPL). By our TFA, we emphasize that it is possible to design the most practical ternary circuits using memristors and MOSFETs. Our TFA uses 97 transistors and 87 memristors, which is the most reasonable TFA design that has the highest potential to be implemented in the near future. Besides, the proposed MTPL uses 16 transistors and 10 memristors, and it occupies only 72.7% of the silicon area, compared to the master-slave ternary flip-flop. [ABSTRACT FROM AUTHOR]

To improve the voltage and power sharing of distributed generations, the hierarchical controls are widely used in microgrids while the dependent communication network makes it difficult to ensure the performance under limited bandwidth. In this paper, a predictive voltage hierarchical controller is designed. With the delayed secondary PI compensation signals, an inner-loop robust control is designed in the primary controller, ensuring stable voltage tracking. Then, a predictive controller is designed to provide neighbor and local predictions, such that the data integrity is improved by an accurate predictive compensation under bidirectional data-loss. Final case study results verify the effectiveness of the proposed method. [ABSTRACT FROM AUTHOR]

This paper proposes an analytical method for effectively evaluating the performances of zero-bias diode-based RF power harvesters. The method allows the accurate calculation of both the diode power conversion efficiency (PCE) and matching efficiency, while showing the wide adaptability to frequency and input power. To calculate the diode PCE accurately, the junction voltage is built based on modeling the diode junction capacitance and turn-on voltage. Using the accurate diode PCE, the equivalent nonlinear resistance of the diode is calculated, and thus the diode impedance is obtained. This helps to design a matching network with required bandwidths and evaluate the corresponding matching efficiency. The total PCE of the RF power harvester is finally obtained by multiplying the diode PCE and matching efficiency. For verification, dual-band RF power harvesters based on diodes of SMS7630 and HSMS-2850 are developed to cover the two 5G frequency bands for three telecom operators in China (2.515-2.675, 3.4-3.5 & 3.5-3.6 GHz). They are designed to operate in the low power range of −25-−5 dBm for low power harvesting scenarios. Compared with the simulated results, the calculation discrepancy of less than 3.12% can be achieved in evaluating the total PCEs of the RF power harvesters. Prototypes of the designed RF power harvesters were fabricated and measured for validation. It shows that the proposed analytical method can provide design guidelines for developing a multi-band RF power harvester. [ABSTRACT FROM AUTHOR]

This article proposes a broadband high-efficiency parallel-circuit (PC) class-EF power amplifier (PA) along with a quarter-wavelength stub for the first time. By adding a reactive element ${X}$ , the design space is expanded so that the impedance terminations of the fundamental and harmonics are no longer fixed points. Based on the broadband capability of the proposed structure, using a GaN HEMT transistor, a proof-of-concept circuit implemented with the Chebyshev impedance transformation network is designed and fabricated. Experimental results demonstrate a high-efficiency broadband PA operating from 2.6-3.9 GHz, with the average efficiency of 71.5%, the measured output power (${P}_{\textit {out}}$) of 38.8-40.9 dBm and the power gain of 8.5-10.6 dB. [ABSTRACT FROM AUTHOR]

This work presents a tail-less fully differential bulk-driven transconductance amplifier without using a common-mode feedback (CMFB) circuit. The proposed amplifier employs two P-type and N-type current mirrors to form two self-biasing positive feedback loops resulting in a double transconductance. The bulk terminals of the P-type current mirrors are used as the input nodes to provide a high input dynamic range. The diode-connected topologies of the current mirrors adaptively bias other transistors to cover the lack of the CMFB circuit. To ensure stability, additional current sources are paralleled with the positive feedback structures. A high output voltage swing and a high DC gain are achieved by adding an adaptively biased common-source amplifier as the output stage leading to a class-AB operation. A large signal analysis, in weak inversion, is also done to mathematically describe both small- and large-signal characteristics. The proposed circuit was fabricated using TSMC $0.18 \mu \text{m}$ CMOS technology occupying a silicon area of $113\,\,\mu \text{m}\,\,\times 70\,\,\mu \text{m}$. Experimental results at a supply voltage of 0.4 V show a gain bandwidth of 7 kHz, a DC gain of 60 dB, and a slew rate of 79 V/ms with just 24 nW power dissipation while driving a capacitive load of $2\times 15$ pF. [ABSTRACT FROM AUTHOR]

This article revisits the concept of “noise measure” and its importance in designing high-frequency low-noise amplifiers. A new derivation is offered which is simpler than the original derivation of Haus and Adler. Several examples are used to calculate the minimum noise measure of a CMOS amplifier. It is also shown that “noise cancellation” techniques cannot improve the minimum noise measure. [ABSTRACT FROM AUTHOR]