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Discrete Fourier Transform (DFT) and Fast Fourier Transform (FFT) are core components in the field of signal processing. However, in the existing research, there is no fully analog circuit that can realize the one-step calculation of FFT. Therefore, in this paper, an analog circuit that can calculate FFT and its inverse transform IFFT in one-step is proposed. First, a circuit that can realize complex number operations is designed. On the basis of this structure, a fully analog circuit that can realize fast and efficient computing of FFT and IFFT in one-step is proposed. In addition, different coefficient matching can be obtained to achieve arbitrary points of FFT and IFFT by adjusting the resistance value of the memristor, which has good programmability. Specific examples are given in the paper to evaluate the proposed method. The PSPICE simulation results show that the average accuracy is above 99.98%. More importantly, the calculation speed has been greatly improved compared with MATLAB simulation. Finally, the proposed circuit can be used to quickly solve convolution operation, and the average accuracy can reach 99.95%. [ABSTRACT FROM AUTHOR]

Diffusion-driven instabilities with pattern formation may occur in a network of identical, regularly-spaced, and resistively-coupled cells if and only if the uncoupled cell is poised on a locally-active and stable operating point in the Edge of Chaos domain. This manuscript presents the simplest ever-reported two-cell neural network, combining together only 7 two-terminal components, namely 2 batteries, 3 resistors, and 2 volatile NbOx memristive threshold switches from NaMLab, and subject to diffusion-driven instabilities with the concurrent emergence of Turing patterns. Very remarkably, this is the first time an homogeneous cellular medium, with no other dynamic element than 2 locally-active memristors, hence the attribute all-memristor coined to address it in this paper, is found to support complex phenomena. The destabilization of the homogeneous solution occurs in this second-order two-cell array if and only if the uncoupled cell circuit parameters are chosen from the Edge of Chaos domain. A deep circuit- and system-theoretic investigation, including linearization analysis and phase portrait investigation, provides a comprehensive picture for the local and global dynamics of the bio-inspired network, revealing how a theory-assisted approach may guide circuit design with inherently non-linear memristive devices. [ABSTRACT FROM AUTHOR]

Most memristor-based associative memory neural networks are focused on classical conditioning and ignored operant conditioning. In this paper, a memristor-based neural network of operant conditioning accorded with biological feature is designed. The designed circuit includes a voltage control module, an operant module and synapse modules. It realizes learning, forgetting, long-term memory, reinforcement and punishment functions based on variable synapse structure and double self-protection measure. Meanwhile, the four factors that affect operant conditioning such as contingency, immediacy, magnitude and deprivation are discussed and implemented. The simulation results in PSPICE show that the circuit can be used to simulate actual conditioned reflex and complicated applications. The memristor-based neural network circuit of operant conditioning provides more references for further development of neural networks. [ABSTRACT FROM AUTHOR]

Inhomogeneous linear ordinary differential equations (ODEs) and systems of ODEs can be solved in a variety of ways. However, hardware circuits that can perform the efficient analog computation to solve them are rarely in the literature. To address such problems, this paper proposes a general method of using a memristor-capacitor (M-C) circuit to solve inhomogeneous linear ODEs and systems of ODEs of any order in initial value problems. The M-C circuit can match the coefficients of the equations sought by adjusting the memristor resistance value according to the coefficient formula proposed in the paper, which has higher programmability. Then, some ODEs and systems of ODEs are given in the paper as examples to evaluate the proposed method. According to the comparison results based on MATLAB software simulation and the simulation based on OrCAD software, the designed M-C circuit has an effective improvement in speed and the accuracy exceeds 99.95% in software simulation. Based on practical verification, this paper gives the actual M-C circuit experiment based on PCB. Moreover, the proposed method can be used to quickly solve the object motion state in the spring mass damping system in actual engineering, and the accuracy can reach 99.98%. [ABSTRACT FROM AUTHOR]

In this paper, we present a compact memristor model for bipolar neuromorphic ReRAM devices. The proposed model focuses on the high level description of the device, and it reproduces some of the most important characteristics (i.e. conductance, energy dissipation) without needing a detailed electrical simulation. Its functionality is shown by using it to model the behavior of three different ReRAM devices that were fabricated and measured at the CNR-IMM, MDM Laboratory. The parameters extraction procedure is also discussed. The obtained results clearly show that the model proposed in this paper is able to capture the influence of the programming pulse parameters (i.e. pulse duration and height) changes. This is accomplished by the introduction of a parameter, which is related to the specific device technology. [ABSTRACT FROM AUTHOR]

This paper presents an extensive study of linear and logistic regression algorithms implemented with 1T1R memristor crossbars arrays. Using a sophisticated simulation platform that wraps circuit-level simulations of 1T1R crossbars and physics-based models of RRAM (memristors), we elucidate the impact of device variability on algorithm accuracy, convergence rate and precision. Moreover, a smart pulsing strategy is proposed for practical implementation of synaptic weight updates that can accelerate training in real crossbar architectures. Stochastic multi-variable linear regression shows robustness to memristor variability in terms of prediction accuracy but reveals impact on convergence rate and precision. Similarly, the stochastic logistic regression crossbar implementation reveals immunity to memristor variability as determined by negligible effects on image classification accuracy but indicates an impact on training performance manifested as reduced convergence rate and degraded precision. [ABSTRACT FROM AUTHOR]

In this paper, a unified framework is proposed to address the synchronization problem of memristor chaotic systems (MCSs) via the sliding-mode control method. By employing the presented unified framework, the finite-time and fixed-time synchronization of MCSs can be realized simultaneously. On the one hand, based on the Lyapunov stability and sliding-mode control theories, the finite-/fixed-time synchronization results are obtained. It is proved that the trajectories of error states come near and get to the designed sliding-mode surface, stay on it accordingly and approach the origin in a finite/fixed time. On the other hand, we develop an image encryption algorithm as well as its implementation process to show the application of the synchronization. Finally, the theoretical results and the corresponding image encryption application are carried out by numerical simulations and statistical performances. [ABSTRACT FROM AUTHOR]

Memristors are widely used to construct multi-scroll/wing chaotic systems with complex dynamics. However, the generation of a multi-scroll/wing attractor is typically not induced by the memristor but depends on other nonlinear functions in the system, which does not take advantage of the unique features of the memristor for chaos-based applications. To address this issue, the present paper introduces a memristor coupling (MC) method to construct a novel memristive Sprott A system (MSAS) through coupling a flux-controlled memristor with multi-piecewise linear memductance into the chaotic Sprott A system. From theoretical analysis and numerical simulations, the MSAS is shown to be able to generate any number of multi-type hidden attractors, including multi-one-scroll, multi-double-scroll and multi-double-wing hidden attractors. In addition, it has two kinds of multistabilities, that is, heterogeneous multistability and homogeneous multistability. Based on these unique properties, different numbers of coexisting heterogeneous hidden attractors and coexisting homogeneous hidden attractors are derived respectively by switching the memristor initial states. These interesting dynamical properties are comprehensively investigated using nonlinear analysis tools. Furthermore, hardware experiments are implemented to demonstrate the feasibility of the MSAS and the effectiveness of the MC method. Finally, a new pseudo-random number generator (PRNG) is proposed to explore the practical applications of the MSAS. Performance evaluation results verify the high-quality randomness of the designed PRNG. [ABSTRACT FROM AUTHOR]

Regarding as a basic circuit component with special nonlinearity, memristor has been widely applied in chaotic circuits and neuromorphic circuits. However, discrete memristor (DM) has not been received much attention, yet. To this end, this paper reports a general DM model and its unified mapping model. Using the general DM model, four representations of DMs are given and their pinched hysteresis loops are exhibited. Based on the unified DM mapping model, four two-dimensional (2D) DM maps are generated and their parameter-relied and initials-relied behaviors are explored using multiple numerical measures. The results demonstrate that all the four 2D DM maps can generate hyperchaos with coexisting bi-stable or memristor initial-boosted behavior, and their sequences have excellent performance indictors. A hardware device is constructed to implement these maps and the analog voltage signals are experimentally acquired. Moreover, pseudo-random number generators (PRNGs) are designed using these DM maps and the test results show that the generated pseudo-random numbers (PRNs) have high randomness. [ABSTRACT FROM AUTHOR]

In this paper, the sensitivity of the neural network (NN) outputs to device parameter uncertainties (non-idealities) in inverter-based memristor (IM) crossbar neuromorphic circuits is mathematically modeled and verified using exhaustive circuit and system-level simulations. The NN sensitivity is obtained by modeling the sensitivity of the IM neuron output to the non-idealities of its circuit elements. The analysis reveals a higher sensitivity of the output voltage of the IM neuron to the non-idealities of the inverters compared to the conductance variation of the memristors. Among the inverter non-idealities, horizontal shift of the inverters voltage transfer characteristic (VTC) shows the highest impact on the output voltage of the neuron. To reduce the accuracy loss due to the variations, a training approach which includes a sensitivity term in the cost function of the training phase, is suggested. The achievable improvements through the said NN training approach are evaluated. In the evaluation, the California Housing, MNIST, and Fashion MNIST datasets are employed. The results show up to 50% reduction in the NN output variations in the presence of circuit elements’ non-idealities. [ABSTRACT FROM AUTHOR]

In this paper, a method for offline training of inverter-based memristive neural networks (IM-NNs), called ERIM, is presented. In this method, the output voltage of the inverter is modeled very accurately by considering the loading effect of the memristive crossbar. To properly choose the size of each inverter, its output load and the required slope of its voltage transfer characteristic (VTC) for an acceptable level of resiliency to the circuit element non-idealities are taken into account. The efficacy of ERIM is investigated by comparing its accuracy to those of two recently proposed offline training methods for IM-NNs (RIM and PHAX). The study is performed using IRIS, BCW, MNIST, and Fashion MNIST datasets. Simulation results show that 72% (56%) reduction in average energy consumption of the trained networks is achieved compared to RIM (PHAX) thanks to proper sizing of the inverters. In addition, due to the higher accuracy of the NN mathematical model, ERIM results in significant improvements in the match between the results of high-level modeling and HSPICE simulations while exhibiting lower sensitivity to circuit element variations. [ABSTRACT FROM AUTHOR]

No isolated system may ever support complexity. Emergent phenomena may however appear in an open system, if, as established by the Edge of Chaos theory, some of its constitutive elements feature the capability to amplify infinitesimal fluctuations in energy, provided an external source supplies them with a sufficient amount of DC power, which is known to be a signature for locally-active behaviour. In particular, complex behaviours, including static and dynamic pattern formation, may emerge in arrays of identical diffusively-coupled cells, if and only if the basic unit is poised on a particular sub-domain of the Local Activity regime, referred to as Edge of Chaos, within which a quiet state hides in fact a high degree of excitability. Here we show, for the first time, that these counterintuitive phenomena may emerge in a basic memristor cellular neural network, consisting of two identical diffusively-coupled second-order cells. The proposed bio-inspired array represents the simplest ever-reported open system, which reproduces the shocking phenomenon, reported by Smale in 1974, when, while studying a model from cellular biology, he observed two identical reaction cells, “mathematically dead” on their own, pulsating together upon diffusive coupling. Impressively, the bio-inspired two-cell reaction-diffusion network contains only nine circuit elements, specifically two DC voltage sources, three linear resistors, two linear capacitors, and two functional niobium oxide (NbO) memristors from NaMLab. Applying the theory of Local Activity to an accurate model of the memristor oscillator, a comprehensive picture for its local and global dynamics may be drawn, providing a systematic method to tune the design parameters of the two-cell array to enable diffusion-driven instabilities therein. [ABSTRACT FROM AUTHOR]

We present a compact, continuous, and numerically stable version of a tantalum oxide (TaOx) memristor model which can be employed for robust and reliable simulations of large scale memristor based circuits. The original model contains a piecewise differentiable function in the memductance expression and discontinuous step functions in the state equation. Additionally, the original model does not set a proper upper bound for the state variable and may admit blowing up solutions due to an exponential power term, preventing the use of it for numerically reliable simulations. Considering these drawbacks, we modify the original model so as to i) simplify the memductance function while removing its piecewise differentiable nonlinearity, ii) include a proper window function for the ON state dynamics, which is missing in the original model, iii) modify and bound the exponential power term to prevent an uncontrollable blow-up of the solutions, and iv) apply a process called unification, allowing us to remove the step functions inherent in the model, which is a novelty in state-limited memristor models. We validate the accuracy of the proposed model via DC and transient simulations, dynamic route map analysis and a Spice implementation of an anti-series configuration, showing the applicability of the model. [ABSTRACT FROM AUTHOR]

Memristive technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the development of an accessible and user-friendly design flow, supported by an industry-grade toolchain. In this work, we demonstrate the behaviour of our in-house fabricated custom memristor model and its integration into the Cadence Electronic Design Automation (EDA) tools for verification. Various input stimuli were given to record the memristive device characteristics both at the device level as well as the schematic level for verification of the memristor model. This design flow from device to industrial level EDA tools is the first step before the model can be used and integrated with Complementary Metal-Oxide Semiconductor (CMOS) in applications for hybrid memristor/CMOS system design. [ABSTRACT FROM AUTHOR]

We present and experimentally validate two minimal compact memristive models for spiking neuronal signal generation using commercially available low-cost components. The first neuron model is called the Memristive Integrate-and-Fire (MIF) model, for neuronal signaling with two voltage levels: the spike-peak, and the rest-potential. The second model MIF2 is also presented, which promotes local adaptation by accounting for a third refractory voltage level during hyperpolarization. We show both compact models are minimal in terms of the number of circuit elements and integration area. Using the MIF and MIF2 models, we postulate the design of a memristive solid-state brain with an estimation of its surface area and power consumption. Analytical projections show that a memristive solid-state brain could be realized within (i) the surface area of the median human brain, 2,400cm2, (ii) the same volume of the median human brain, and (iii) a total power budget of approximately 20 W using a 3.5 nm technology. Distinct from the past decade of memristive neuron literature, our benchmarks are attained using generic commercially available memristors that are reproducible using off-the-shelf components. We expect this work can promote more experimental demonstrations of memristive circuits that do not rely on prohibitively expensive fabrication processes. [ABSTRACT FROM AUTHOR]

Recently, an in-memory analog circuit based on crosspoint memristor arrays was reported, which enables solving linear regression problems in one step and can be used to train many other machine learning algorithms. To explore its potential for computing accelerator applications, it is of fundamental importance to improve the computing speed of the circuit, i.e., the circuit response towards correct outputs. In this work, we comprehensively studied the transfer function of this circuit, resulting in a quadratic eigenvalue problem that describes the distribution of poles. The minimal real part of non-zero eigenvalues defines the dominant pole, which in turn dominates the response time. Simulations for multiple linear regression solutions with different datasets evidence that, the computing time does not necessarily increase with problem size. The dominant pole is related to parameters in the circuit, including feedback conductance, and gain bandwidth products of operational amplifiers. By optimizing these parameters synergistically, the dominant pole shifts to higher frequencies and the computing speed is consequently optimized. Our results provide a guideline for design and optimization of in-memory machine learning accelerators with analog memristor arrays. Also, issues including power consumption, impact of noise and variation of sources and memristors are investigated to offer a comprehensive evaluation of the circuit performance. [ABSTRACT FROM AUTHOR]

The capability of in-memory computation, reconfigurability, low power operation as well as multistate operation of the memristive device deems them a suitable candidate for designing electronic circuits with a broad range of applications. Besides, the integrability of memristor with CMOS enables it to use in logic circuits too. In this work, we demonstrate with examples the design flow for memristor-based electronics, after the custom memristor model already being integrated and validated into our chosen Computer-Aided Design (CAD) tool to performing layout-versus-schematic and post-layout checks including the memristive device. We envisage that this step-by-step guide to introducing memristor into the standard integrated circuit design flow will be a useful reference document for both device developers who wish to benchmark their technologies and circuit designers who wish to experiment with memristive-enhanced systems. [ABSTRACT FROM AUTHOR]

The increasing demand for data-intensive computing applications, such as artificial intelligence (AI) and more specifically machine learning (ML), raises the need for novel computing hardware architectures capable of massive parallelism in performing core algebraic operations. Among the new paradigms, in-memory computing (IMC) with analogue devices is attracting significant interest for its large-scale integration potential, together with unrivaled speed and energy performance. Here, we present a fully-analogue, universal primitive capable of executing linear algebra operations such as regression, generalized least-square minimization and linear system solution with and without preconditioning. We study the impact of the main circuit parameters on accuracy and bandwidth with analytical closed-form expressions and SPICE simulations. Scaling challenges due to parasitic resistance/capacitance and their impact on key parameters such as bandwidth and accuracy are discussed. Finally, a comparison with existing solvers belonging to the same IMC framework is made to assess advantages and disadvantages of the proposed circuit. [ABSTRACT FROM AUTHOR]

Hardware realizations of neuronal networks should also consider axon growth in addition to synaptic weight changes, because this accounts for an additional dynamic aspect due to the delayed signal transmission varying with the grown axon length. Our aim is to model axon growth by electrical circuits to enable a dynamic, self-organized topology formation, extending the state of the art hardware realizations. We start from a lossless transmission line whose underlying partial differential equations serve as a modeling of a locally distributed static axon. We then derive a memory-dependent axon model implementing a growth mechanism by utilizing the wave digital concept as a modeling tool based on mapping voltages and currents to wave quantities. The growth mechanism utilizes memristive Jaumann structures and can be seen as a fundamental building block enabling a spike-timing-dependent topology formation. Emulation results show that our approach offers an axon model with reconfigurable axon length capable of mimicking spike-timing-dependent axon growth. Moreover, we consider Pavlov’s dog experiment to demonstrate the delay-based self-organized topology formation due to Hebbian learning in a small neuronal network. [ABSTRACT FROM AUTHOR]