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The growth of IoT applications requires DC-DC converters to have small printed circuit board (PCB) areas and high efficiency over a wide load range. A multi-mode operation of DC-DC converters, therefore, is often necessary to achieve this high efficiency over a wide load range. This paper introduces a tri-mode DC-DC buck converter for IoT applications. The tri-mode operation with PWM, PFM, and multiple-sawtooth PWM (MSPWM) modes helps to retain the high efficiency over the wide load range. The MSPWM mode also enhances a noise margin of the converter, ensuring a regular switching operation at an ultra-light load condition. With a load current prediction scheme, the proposed tri-mode converter requires neither additional load current sensor nor multiple mode controllers. In addition, a soft-start operation is employed to prevent an in-rush current. The proposed tri-mode buck converter has been fabricated through a 0.18- $\mu \text{m}$ CMOS process with a chip area of 0.97 mm $\times0.88$ mm. A load-dependent seamless mode transition is realized, and a maximum converter efficiency of 91% has been measured with a 7.4-MHz switching frequency. [ABSTRACT FROM AUTHOR]

The general structure of a multilevel multistate dc–dc converter is introduced, which is a hybrid between inductor-based (buck) converters and capacitor-based (switched capacitor) converters. The control of the new converter is hybrid between switched capacitor converters and buck converters, where the coarse tuning of the output voltage is achieved through the selection of an appropriate operating region similar to an SC converter, while fine tuning is achieved through the adjustment of a duty cycle value similar to a buck converter. A silicon implementation of a four-level four-state hybrid converter is presented as a specific example of the general hybrid converter structure. A new state interleaving technique was employed resulting in an increased effective switching frequency of the converter. Silicon measurements of the integrated four-level four-state converter on a 65-nm GF technology show that the converter can cover a wide range of output voltage values achieving a peak efficiency of 93% with a power density of 47 mW/mm2. The implemented converter attains a response time in the sub- ${\mu }\text{s}$ range with output voltage ripples below 50 mV. [ABSTRACT FROM AUTHOR]