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This paper presents a study and comparison of surface effects induced by picosecond and nanosecond laser modification of a Ti6Al4V alloy surface under different ambient conditions: air and argon- and nitrogen-rich atmospheres. Detailed surface characterization was performed for all experimental conditions. Damage threshold fluences for picosecond and nanosecond laser irradiation in all three ambient conditions were determined. The observed surface features were a resolidified pool of molten material, craters, hydrodynamic effects and parallel periodic surface structures. Laser-induced periodic surface structures are formed by multi-mode-beam nanosecond laser action and picosecond laser action. Crown-like structures at crater rims are specific features for picosecond Nd:YAG laser action in argon-rich ambient conditions. Elemental analysis of the surfaces indicated nitride compound formation only in the nitrogen-rich ambient conditions. The constituents of the formed plasma were also investigated. Exploring the impact of process control parameters on output responses has been undertaken within the context of laser modification under different environmental conditions. Parametric optimization of the nanosecond laser modification was carried out by implementing an advanced method based on Taguchi’s parametric design and multivariate statistical techniques, and optimal settings are proposed for each atmosphere.

In the literature, a magnetic “easy” axis perpendicular to the film plane at room temperature (i.e., perpendicular magnetic anisotropy - PMA) has been reported in Ni (nickel) layers with thicknesses below ≈15 nm. In this work, we observed room-temperature PMA in a-Si/Ni/a-Si (where a-Si denotes amorphous silicon) thin film structures with nickel layer thicker than 15 nm. Two layered structures were prepared by DC/RF triode sputtering: [a-Si/Ni/a-Si] sandwich structure and [a-Si/Ni/a-Si]5 multilayer structure. The cross sectional STEM revealed uniform Ni layers with thicknesses of ≈17 nm in [a-Si/Ni/a-Si]5 – multilayer and ≈28 nm in [a-Si/Ni/a-Si] – single-layer whereas amorphous Si layers were ≈15 nm and 170 nm thick, respectively. An amorphous Ni–Si interphase was also observed in the layered structures. The XRD showed patterns for fcc-Ni with dominant (111) orientation. No other crystalline phases were observed in the XRD patterns. To our knowledge, there are no literature reports of easy magnetization direction perpendicular to the film plane at room temperature for Ni layers with thickness of ≈28 nm as presented in this work. The origin of PMA in a-Si/Ni/a-Si films may be mainly attributed to the magnetoelastic anisotropy whereas the secondary source of PMA is believed to be the surface anisotropy and magnetocrystalline anisotropy of [111] columnar grains. Amorphous silicon layers (substrate) do not have a well-defined lattice structure like crystalline substrates. Therefore, they do not induce strains in the nickel layers through lattice mismatch as in the case of epitaxy. The strains can be caused by other factors such as diffusion-induced strain, thermal expansion mismatch or intrinsic stresses during the growth process. These results could be important for applications in memory devices, sensors, logic chips, magneto-optic, magneto-electronic and spintronic devices and in fundamental research, as well as first step toward preparation and understanding of the

Development of a robust photocathode using lowcost and high-performing materials, e.g., p-Si, to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). Specifically, a very thin (3.9 nm ∼10 unit cells) STO layer epitaxially overgrown on rGO-buffered Si showed the highest onset potential (0.326 V vs RHE) in comparison to the counterparts with thicker and/or nonepitaxial STO. The photovoltage, flat-band potential, and electrochemical impedance spectroscopy measurements revealed that the epitaxial photocathode was more beneficial for charge separation, charge transfer, and targeted redox reaction than the nonepitaxial one. The STO/rGO/Si with a smooth and highly epitaxial STO layer outperforming the directly contacted STO/Si with a textured and polycrystalline STO layer showed the importance of having a well-defined passivation layer. In addition, the numerous pinholes formed in the directly contacted STO/Si led to the rapid degradation of the photocathode during the PEC measurements. The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.

In this experimental study, picosecond laser treatment was performed on a nickel-based superalloy Nimonic 263, aiming to investigate the surface effects induced by irradiation in different atmospheric conditions and, concerning changes in surface composition, regarding the possibility for improvement of its functionality. Besides the varying laser parameters, such as a number of pulses and pulse energy, environmental conditions are also varied. All surface modifications were carried out in standard laboratory conditions and a nitrogen- and argon-rich atmosphere. The resulting topography effects depend on the specific laser treatment and could be categorized as increased roughness, crater formation, and formation of the laser-induced periodic surface structures (LIPSS). Changes in the chemical surface composition are distinguished as the potential formation of the protective oxides/nitrides on the sample surface. Numerous characterization techniques analyse the resulting effects on the topography and surface parameters. The multi-response parametric optimization of the picosecond laser process was performed using an advanced statistical method based on Taguchi’s robust parameter design. Finally, the optimal parameter conditions for Nimonic 263 modification are suggested.

Thin polymer films were deposited on polished stainless-steel samples by PECVD from a cyclopropylamine precursor and characterized by X-ray photoelectron spectroscopy, secondary-ion mass spectrometry and glow discharge optical emission spectroscopy (GDOES) depth profiling. These depth profiles exhibited reasonable agreement. The GDOES involved the erosion of the polymer films in plasma sustained by an asymmetric RF capacitively coupled discharge using both Ar and Ar-O-2 gases. The application of pure Ar caused unwanted effects, such as the broadening of the polymer-film/substrate interface, which were suppressed when using the mixture with oxygen. Another benefit of oxygen was a significant increase in the etching rate by a factor of about 15 as compared to pure argon. The mechanisms involved in the depth profiling using the mixture of gases were elaborated in some detail, taking into account plasma parameters typical for an asymmetric, capacitively coupled RF discharge in a small volume. The main benefit of using the Ar/O-2 GDOES profiling with respect to XPS and SIMS depth profiling is the increased sputtering rate for polymer films. Comparing the GDOES depth profiling with the Ar/O-2 mixture with profiling in pure Ar, the benefits are a higher sputtering rate and better depth resolution at the polymer/substrate interface.

Thin polymer films were deposited on polished stainless-steel samples by PECVD from a cyclopropylamine precursor and characterized by X-ray photoelectron spectroscopy, secondary-ion mass spectrometry and glow discharge optical emission spectroscopy (GDOES) depth profiling. These depth profiles exhibited reasonable agreement. The GDOES involved the erosion of the polymer films in plasma sustained by an asymmetric RF capacitively coupled discharge using both Ar and Ar-O-2 gases. The application of pure Ar caused unwanted effects, such as the broadening of the polymer-film/substrate interface, which were suppressed when using the mixture with oxygen. Another benefit of oxygen was a significant increase in the etching rate by a factor of about 15 as compared to pure argon. The mechanisms involved in the depth profiling using the mixture of gases were elaborated in some detail, taking into account plasma parameters typical for an asymmetric, capacitively coupled RF discharge in a small volume. The main benefit of using the Ar/O-2 GDOES profiling with respect to XPS and SIMS depth profiling is the increased sputtering rate for polymer films. Comparing the GDOES depth profiling with the Ar/O-2 mixture with profiling in pure Ar, the benefits are a higher sputtering rate and better depth resolution at the polymer/substrate interface.

The surface morphology of the ablation craters created in the multilayer 10x(Al/Ti)/Si system by nanosecond laser pulses at single- and dual wavelength has been studied experimentally and numerically. A complex multilayer thin film including ten (Al/Ti) bilayers deposited by ion sputtering on Si(1 0 0) substrate to a total thickness of 260 nm were illuminated at different laser irradiance in the range 0.25-3.5 x 10(9)W cm(-2). Single pulse laser irradiation was done at normal incidence in air, with the single wavelength, either at 532 nm or 1064 nm or with both laser light simultaneously in the ratio of 1: 10 for energy per pulse between second harmonic and 1064 nm. Most of the absorbed laser energy was rapidly transformed into heat, producing intensive modifications of composition and morphology on the sample surface. The results show an increase in surface roughness, formation of specific nanostructures, appearance of hydrodynamic features and ablation of surface material with crater formation. Applying a small fraction (10%) of the second harmonic in dual-wavelength pulses, a modification of the 10x(Al/Ti)/Si system by a single laser pulse was reflected in the formation of wider and/or deeper craters. Numerical calculations show that the main physical mechanism in ablation process is normal evaporation without phase explosion. The calculated and experimental results agree relatively well for the whole irradiance range, what makes the model applicable to complex Al/Ti multilayer systems. (C) 2015 Elsevier B.V. All rights reserved.

A study of the effects of laser irradiation on the morphology and composition of Ni/Ti multilayers induced by nanosecond laser pulses at different wavelengths is reported. Irradiation of complex 109(Ni/Ti)/Si sample was done by a Nd:YAG laser which operate at a 1064 nm wavelength, frequency doubled wavelength (532 nm) and dual-wavelength (1064 and 532 nm). The following surface morphological changes were observed: (1) ablation of the thin film during the first laser pulse and (2) appearance of some nanostructures (mosaic structure) in the irradiated region. After action of one pulse, the boundary of damage area was relatively sharp at low pulse energy, whereas it was diffuse after irradiation with higher energy per pulse. The results obtained show that laser irradiation induced mixing between Ni and Ti layers which creates conditions for the formation of intermetallic compounds. A numerical model was used to predict ablation depths and temperatures inside the material during the time. The model prediction shows a close agreement with experimental data.

The surface morphology of the ablation craters created in the multilayer 10x(Al/Ti)/Si system by nanosecond laser pulses at single- and dual wavelength has been studied experimentally and numerically. A complex multilayer thin film including ten (Al/Ti) bilayers deposited by ion sputtering on Si(1 0 0) substrate to a total thickness of 260 nm were illuminated at different laser irradiance in the range 0.25-3.5 x 10(9)W cm(-2). Single pulse laser irradiation was done at normal incidence in air, with the single wavelength, either at 532 nm or 1064 nm or with both laser light simultaneously in the ratio of 1: 10 for energy per pulse between second harmonic and 1064 nm. Most of the absorbed laser energy was rapidly transformed into heat, producing intensive modifications of composition and morphology on the sample surface. The results show an increase in surface roughness, formation of specific nanostructures, appearance of hydrodynamic features and ablation of surface material with crater formation. Applying a small fraction (10%) of the second harmonic in dual-wavelength pulses, a modification of the 10x(Al/Ti)/Si system by a single laser pulse was reflected in the formation of wider and/or deeper craters. Numerical calculations show that the main physical mechanism in ablation process is normal evaporation without phase explosion. The calculated and experimental results agree relatively well for the whole irradiance range, what makes the model applicable to complex Al/Ti multilayer systems. (C) 2015 Elsevier B.V. All rights reserved.

A study of the effects of laser irradiation on the morphology and composition of Ni/Ti multilayers induced by nanosecond laser pulses at different wavelengths is reported. Irradiation of complex 109(Ni/Ti)/Si sample was done by a Nd:YAG laser which operate at a 1064 nm wavelength, frequency doubled wavelength (532 nm) and dual-wavelength (1064 and 532 nm). The following surface morphological changes were observed: (1) ablation of the thin film during the first laser pulse and (2) appearance of some nanostructures (mosaic structure) in the irradiated region. After action of one pulse, the boundary of damage area was relatively sharp at low pulse energy, whereas it was diffuse after irradiation with higher energy per pulse. The results obtained show that laser irradiation induced mixing between Ni and Ti layers which creates conditions for the formation of intermetallic compounds. A numerical model was used to predict ablation depths and temperatures inside the material during the time. The model prediction shows a close agreement with experimental data.

Laser-induced periodic surface structures (LIPSSs) and chemical composition changes of Ti-based nanolayered thin films (Al/Ti, Ni/Ti) after femtosecond (fs) laser pulses action were studied. Irradiation is performed using linearly polarized Ti:Sapphire fs laser pulses of 40 fs pulse duration and 800 nm wavelength. The low spatial frequency LIPSS (LSFL), oriented perpendicular to the laser polarization with periods slightly lower than the irradiation wavelength, was typically formed at elevated laser fluences. On the contrary, high spatial frequency LIPSS (HSFL) with uniform period of 155 nm, parallel to the laser light polarization, appeared at low laser fluences, as well as in the wings of the Gaussian laser beam distribution for higher used fluence. LSFL formation was associated with the material ablation process and accompanied by the intense formation of nanoparticles, especially in the Ni/Ti system. The composition changes at the surface of both multilayer systems in the LSFL area indicated the intermixing between layers and the substrate. Concentration and distribution of all constitutive elements in the irradiated area with formed HSFLs were almost unchanged. (C) 2013 AIP Publishing LLC.

Laser-induced periodic surface structures (LIPSSs) and chemical composition changes of Ti-based nanolayered thin films (Al/Ti, Ni/Ti) after femtosecond (fs) laser pulses action were studied. Irradiation is performed using linearly polarized Ti:Sapphire fs laser pulses of 40 fs pulse duration and 800 nm wavelength. The low spatial frequency LIPSS (LSFL), oriented perpendicular to the laser polarization with periods slightly lower than the irradiation wavelength, was typically formed at elevated laser fluences. On the contrary, high spatial frequency LIPSS (HSFL) with uniform period of 155 nm, parallel to the laser light polarization, appeared at low laser fluences, as well as in the wings of the Gaussian laser beam distribution for higher used fluence. LSFL formation was associated with the material ablation process and accompanied by the intense formation of nanoparticles, especially in the Ni/Ti system. The composition changes at the surface of both multilayer systems in the LSFL area indicated the intermixing between layers and the substrate. Concentration and distribution of all constitutive elements in the irradiated area with formed HSFLs were almost unchanged. (C) 2013 AIP Publishing LLC.

A study of the effects of laser irradiation on the morphology and structure of Al/Ti and Ni/Ti multilayers is reported in this paper. Multilayers of Al/Ti and Ni/Ti were deposited by dc ion sputtering on Si(100) substrates in a single vacuum run. Laser processing was done by a focused Er, Yb, Cr glass laser beam at a wavelength of 1540 nm, a pulse duration of 40 ns and fluence in the range 8.5-23.8 J cm(-2). Surface changes can be summarized as follows: (i) the intensive removal of surface material with crater-like characteristics, (ii) the appearance of hydrodynamic features (such as resolidified droplets) and (iii) the sporadic appearance of cracking. Changes in the (Ni/Ti)/Si system included modification of the Si substrate with the formation of polygonal-mosaic structures and the appearance of hydrodynamic features in the form of nano-globules. The rate of ablation increased with energy density, whereas the rate of ablation for the (Ni/Ti)/Si system (similar to 11 x 10(3) mu m(3) per pulse) was higher than that for the (Al/Ti)/Si system (similar to 7 x 10(3) mu m(3) per pulse).

In this work we studied the influence of laser radiation on the composition, structure and morphology of WTi thin films deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 70:30 at% W-Ti target, using Ar ions, to a thickness of similar to 190 nm. Irradiation was performed with a pulsed Nd:YAG laser operating at 1064 nm, whereas the pulse duration was 150 ps. Laser fluences of 3.2 and 5.9 J/cm(2) were found to be sufficient for modification of the WTi/silicon target system. The results show: (i) ablation of WTi thin film and a Si substrate in the central zone of spots, (ii) appearance of hydrodynamic features like resolidified material, (iii) partial ablation of the WTi thin film at the periphery and (iv) appearance of thin film cracks at the far periphery. On the non-ablated areas, the laser modification induced changes in composition, such as inter-mixing of components at the WTi/Si interface with formation of silicides in both metals. Surface oxidation was the dominant process in the ablated areas, which is demonstrated by the presence of a SiO2 phase.

A study of the effects of laser irradiation on the morphology and structure of Al/Ti and Ni/Ti multilayers is reported in this paper. Multilayers of Al/Ti and Ni/Ti were deposited by dc ion sputtering on Si(100) substrates in a single vacuum run. Laser processing was done by a focused Er, Yb, Cr glass laser beam at a wavelength of 1540 nm, a pulse duration of 40 ns and fluence in the range 8.5-23.8 J cm(-2). Surface changes can be summarized as follows: (i) the intensive removal of surface material with crater-like characteristics, (ii) the appearance of hydrodynamic features (such as resolidified droplets) and (iii) the sporadic appearance of cracking. Changes in the (Ni/Ti)/Si system included modification of the Si substrate with the formation of polygonal-mosaic structures and the appearance of hydrodynamic features in the form of nano-globules. The rate of ablation increased with energy density, whereas the rate of ablation for the (Ni/Ti)/Si system (similar to 11 x 10(3) mu m(3) per pulse) was higher than that for the (Al/Ti)/Si system (similar to 7 x 10(3) mu m(3) per pulse).

In this work we studied the influence of laser radiation on the composition, structure and morphology of WTi thin films deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 70:30 at% W-Ti target, using Ar ions, to a thickness of similar to 190 nm. Irradiation was performed with a pulsed Nd:YAG laser operating at 1064 nm, whereas the pulse duration was 150 ps. Laser fluences of 3.2 and 5.9 J/cm(2) were found to be sufficient for modification of the WTi/silicon target system. The results show: (i) ablation of WTi thin film and a Si substrate in the central zone of spots, (ii) appearance of hydrodynamic features like resolidified material, (iii) partial ablation of the WTi thin film at the periphery and (iv) appearance of thin film cracks at the far periphery. On the non-ablated areas, the laser modification induced changes in composition, such as inter-mixing of components at the WTi/Si interface with formation of silicides in both metals. Surface oxidation was the dominant process in the ablated areas, which is demonstrated by the presence of a SiO2 phase.

A study of morphological and composition changes of the WTi/Si system induced by nanosecond and picosecond laser pulses is presented. A 190 nm thick WTi film was deposited on a silicon substrate of n-type (100). The pulsed laser systems used were: nanosecond TEA CO(2) laser (emission, 10.6 mu m; pulse FWHM; pulse duration 120 ns) and picosecond Nd:YAG laser (emission, 532 nm; pulse FWHM; pulse duration 40 ps). During experiments the used fluences (Phi) had similar values, Phi(1) = 20 J cm(-2) in case of the TEA CO(2) laser and Phi(2) = 16 J cm(-2) for the Nd: YAG laser. The laser-induced morphological and composition modifications showed a dependence on pulse duration. Generally, the following morphological changes were observed: (i) ablation/exfoliation of the WTi thin film, (ii) appearance of hydrodynamic features such as resolidified material, and (iii) formation of nano-sized grains and globules. Overall morphological modifications were more pronounced after the picosecond laser action. The surface composition analysis showed a quite different distribution of sample components depending on the pulse duration. Formation of the silicon dioxide (SiO(2)) was recorded only in the case of irradiation of the WTi/Si system by picosecond laser pulses.

A study of morphological and composition changes of the WTi/Si system induced by nanosecond and picosecond laser pulses is presented. A 190 nm thick WTi film was deposited on a silicon substrate of n-type (100). The pulsed laser systems used were: nanosecond TEA CO(2) laser (emission, 10.6 mu m; pulse FWHM; pulse duration 120 ns) and picosecond Nd:YAG laser (emission, 532 nm; pulse FWHM; pulse duration 40 ps). During experiments the used fluences (Phi) had similar values, Phi(1) = 20 J cm(-2) in case of the TEA CO(2) laser and Phi(2) = 16 J cm(-2) for the Nd: YAG laser. The laser-induced morphological and composition modifications showed a dependence on pulse duration. Generally, the following morphological changes were observed: (i) ablation/exfoliation of the WTi thin film, (ii) appearance of hydrodynamic features such as resolidified material, and (iii) formation of nano-sized grains and globules. Overall morphological modifications were more pronounced after the picosecond laser action. The surface composition analysis showed a quite different distribution of sample components depending on the pulse duration. Formation of the silicon dioxide (SiO(2)) was recorded only in the case of irradiation of the WTi/Si system by picosecond laser pulses.

A multilayered TiAlN/TiN coating deposited on H11 work-steel was irradiated by a TEA CO(2) laser (ns pulses) and a Nd:YAG laser (ps pulses), and the effects compared. The coating was 2.17 mu m thick and consisted of 45 layers. The laser-induced modifications showed dependence on laser pulse duration, pulse count and laser wavelength. The conditions for coating ablation in both cases were determined. The experiment has revealed laser-induced periodic surface structures (LPSS) on nanometre and micrometre scales, depending on the laser wavelength used. Sample surfaces were characterized before and after laser irradiation by an optical microscope, scanning electron microscope (SEM), focused ion beam (FIB) microscope and profilometry.

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm) deposited on single silicon (100) substrate was studied. Laser fluences of 10.5 and 13.4 J/cm(2) were found to be sufficient for modification of the WTi/silicon target system. The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following WTi/silicon surface morphological changes were observed: (i) ablation of the thin film during the first laser pulse. The boundary of damage area was relatively sharp after action of one pulse whereas it was quite diffuse after irradiation with more than 10 pulses; (ii) appearance of some nano-structures (e.g., nano-ripples) in the irradiated region; (iii) appearance of the micro-cracking. The process of the laser interaction with WTi/silicon target was accompanied by formation of plasma.

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm) deposited on single silicon (100) substrate was studied. Laser fluences of 10.5 and 13.4 J/cm(2) were found to be sufficient for modification of the WTi/silicon target system. The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following WTi/silicon surface morphological changes were observed: (i) ablation of the thin film during the first laser pulse. The boundary of damage area was relatively sharp after action of one pulse whereas it was quite diffuse after irradiation with more than 10 pulses; (ii) appearance of some nano-structures (e.g., nano-ripples) in the irradiated region; (iii) appearance of the micro-cracking. The process of the laser interaction with WTi/silicon target was accompanied by formation of plasma.

A multilayered TiAlN/TiN coating deposited on H11 work-steel was irradiated by a TEA CO(2) laser (ns pulses) and a Nd:YAG laser (ps pulses), and the effects compared. The coating was 2.17 mu m thick and consisted of 45 layers. The laser-induced modifications showed dependence on laser pulse duration, pulse count and laser wavelength. The conditions for coating ablation in both cases were determined. The experiment has revealed laser-induced periodic surface structures (LPSS) on nanometre and micrometre scales, depending on the laser wavelength used. Sample surfaces were characterized before and after laser irradiation by an optical microscope, scanning electron microscope (SEM), focused ion beam (FIB) microscope and profilometry.

Interaction of an Nd:YAG laser, operating at 532 nm wavelength and pulse duration of 40 ps, with tungsten-titanium (WTi) thin film (thickness, 190 nm) deposited on single silicon (100) substrate was studied. Laser fluences of 10.5 and 13.4 J/cm(2) were found to be sufficient for modification of the WTi/silicon target system. The energy absorbed from the Nd:YAG laser beam is partially converted to thermal energy, which generates a series of effects, such as melting, vaporization of the molten material, shock waves, etc. The following WTi/silicon surface morphological changes were observed: (i) ablation of the thin film during the first laser pulse. The boundary of damage area was relatively sharp after action of one pulse whereas it was quite diffuse after irradiation with more than 10 pulses; (ii) appearance of some nano-structures (e.g., nano-ripples) in the irradiated region; (iii) appearance of the micro-cracking. The process of the laser interaction with WTi/silicon target was accompanied by formation of plasma.