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As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies. On the other hand, carbon-related nanomaterials have attracted so much attention from a vast variety of research and industry groups due to the outstanding electrical, optical, mechanical and thermal characteristics. Such materials have been used in a variety of devices in microelectronics. In particular, graphene and carbon nanotubes are extraordinarily favorable substances in the literature. Hence, investigation of carbon-related nanomaterials and nanostructures in different ranges of applications in science, technology and engineering is mandatory. This paper reviews the basics, advantages, drawbacks and investigates the recent progress and advances of such materials in micro and nanoelectronics, optoelectronics and biotechnology.

The huge quantity of nodes and interconnections in modern binary circuits leads to extremely high levels of energy consumption. The interconnection complexity and other issues of binary circuits encourage researchers to consider multiple-valued logic (MVL) alternatives. Features of Carbon Nanotube Field-Effect Transistors (CNTFETs) make this technology a potential candidate to implement MVL circuits. In this article, a new systematic methodology is proposed to design ternary logic block circuits based on CNTFETs. The methodology is applied to the design of two basic logic circuits, a half adder and a 1-digit multiplier, which are evaluated through HSPICE simulations. Simulation results indicate improvements over current equivalents in transistor count and PDP mean with the half adder version of 19.2%, and 74.07% respectively, and with the 1-digit multiplier of 24.67% and 81.12% respectively., Peer Reviewed, Postprint (published version)

Physical unclonable functions (PUFs) are new hardware security primitives proposed for protecting resource-constrained devices. This paper presents two PUFs in voltage-and current-modes. The new designs are based on carbon nanotube field effect transistors (CNTFETs). Sensitivity to strong process variation is considered as a demerit of this emerging nanoscale device. However, this deficiency can be the source of constructing unique PUF instances. The proposed circuits are simulated and tested by Synopsys HSPICE using a standard 32nm CNTFET technology. The properties of randomness, uniqueness, reliability, energy efficiency, and area of the implemented CNTFET-based PUFs are evaluated showing very promising results., QC 20170822

Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain phenomena by accounting for the induced change in band-gap and corresponding energy band opening near the Fermi-level of the CNTFET in source exhaustion regime.

Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain phenomena by accounting for the induced change in band-gap and corresponding energy band opening near the Fermi-level of the CNTFET in source exhaustion regime.