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Stacking engineering in van der Waals (vdW) materials is a powerful method to control topological electronic phases for quantum device applications. Atomic intercalation into the vdW material can modulate the stacking structure at the atomic scale without a highly technical protocol. Here we report that lithium intercalation in a topologically structured graphene/buffer system on SiC(0001) drives dynamic topological domain wall (TDW) motions associated with stacking order change by using an in situ aberration-corrected low-energy electron microscope in combination with theoretical modelling. We observe sequential and selective lithium intercalation that starts at topological crossing points (AA stacking) and then selectively extends to AB stacking domains. Lithium intercalation locally changes the domain stacking order to AA and in turn alters the neighbouring TDW stacking orders, and continuous intercalation drives the evolution of the whole topological structure network. Our work reveals moving TDWs protected by the topology of stacking and lays the foundation for controlling the stacking structure via atomic intercalation. These findings open up new avenues to realize intercalation-driven vdW electronic devices.

Time-resolved magneto-optical Kerr effect (MOKE) measurement was demonstrated on a sample of the Au/Fe/Au heterostructure with the Fe layer of 0.35nm thickness under Fe M-edge resonance condition. An ultrabrilliant free electron laser (FEL) in the soft X-ray range was facilitated for the detection of transient signals of resonant MOKE from the ultrathin Fe film. A variation in the Kerr rotation angle was successfully observed on the femtosecond timescale. This technique enables us to reveal the transient magnetization dynamics of such a-few-monolayer magnetic films, which promote the development of spintronic devices.

For in-situ measurements of the local electrical conductivity of well-defined crystal surfaces in ultra-high vacuum, we have developed two kinds of microscopic four-point probe methods. One involves a "four-tip STM prober," in which four independently driven tips of a scanning tunneling microscope (STM) are used for measurements of four-point probe conductivity. The probe spacing can be changed from 500 nm to 1 mm. The other method involves monolithic micro-four-point probes, fabricated on silicon chips, whose probe spacing is fixed around several mum. These probes are installed in scanning-electron-microscopy/electron-diffraction chambers, in which the structures of sample surfaces and probe positions are observed in situ. The probes can be positioned precisely on aimed areas on the sample with the aid of piezoactuators. By the use of these machines, the surface sensitivity in conductivity measurements has been greatly enhanced compared with the macroscopic four-point probe method. Then the conduction through the topmost atomic layers (surface-state conductivity) and the influence of atomic steps on conductivity can be directly measured.