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The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

The structural and electronic properties of 2D perovskite (C4H9NH3)2PbBr4 are investigated from first-principles calculations. It is found that despite the existence of carbon chain, the organic molecule C4H9NH3 in 2D perovskite is able to rotate at room temperature, showing a highly dynamic behavior. The dynamic disorder of C4H9NH3 introduces dynamic potential fluctuation, which is sufficient to localize the wave function and to separate the valence band maximum and conduction band minimum states. We further showed that, rather than a pure dipole rotation model, the disorder effect of the molecules can be better described by the motion of the net charge centers of the molecules, which contributes to the potential fluctuation. Hence, polar molecule is not the necessary condition to create potential fluctuation in perovskite, which is further demonstrated by the calculations of 2D inorganic perovskite Cs2PbBr4.

The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

The structural and electronic properties of 2D perovskite (C4H9NH3)2PbBr4 are investigated from first-principles calculations. It is found that despite the existence of carbon chain, the organic molecule C4H9NH3 in 2D perovskite is able to rotate at room temperature, showing a highly dynamic behavior. The dynamic disorder of C4H9NH3 introduces dynamic potential fluctuation, which is sufficient to localize the wave function and to separate the valence band maximum and conduction band minimum states. We further showed that, rather than a pure dipole rotation model, the disorder effect of the molecules can be better described by the motion of the net charge centers of the molecules, which contributes to the potential fluctuation. Hence, polar molecule is not the necessary condition to create potential fluctuation in perovskite, which is further demonstrated by the calculations of 2D inorganic perovskite Cs2PbBr4.

First-principles calculations have been performed on the band structure of mono- and few-layer TiS3 nanofilms. It is found that the band gap character of the TiS3 films is quite robust, almost independent of layer thickness, vertical strain and stacking order, which is in sharp contrast to most other two-dimensional materials, such as MoS2. The robustness of the band gap originates from the location of the CBM and VBM states, which are at the center atoms of TiS3, and are thus unaffected by the layer-layer coupling. Such a property of TiS3 nanofilms promises good application potential in nanoelectronics and optoelectronics, and also makes TiS3 a good platform to study the electronic properties of a material in the two-dimensional limit.

First-principles calculations have been performed on the band structure of mono- and few-layer TiS3 nanofilms. It is found that the band gap character of the TiS3 films is quite robust, almost independent of layer thickness, vertical strain and stacking order, which is in sharp contrast to most other two-dimensional materials, such as MoS2. The robustness of the band gap originates from the location of the CBM and VBM states, which are at the center atoms of TiS3, and are thus unaffected by the layer-layer coupling. Such a property of TiS3 nanofilms promises good application potential in nanoelectronics and optoelectronics, and also makes TiS3 a good platform to study the electronic properties of a material in the two-dimensional limit.