1. Annealing‐Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy
- Author
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Xiao, Ting, Erfurt, Darja, Félix, Roberto, Liao, Xiaxia, Frisch, Johannes, Abou‐Ras, Daniel, Mazzio, Katherine, Wilks, Regan, Schlatmann, Rutger, Bär, Marcus, Xiao, Ting, Erfurt, Darja, Félix, Roberto, Liao, Xiaxia, Frisch, Johannes, Abou‐Ras, Daniel, Mazzio, Katherine, Wilks, Regan, Schlatmann, Rutger, and Bär, Marcus
- Abstract
Hydrogen-doped In2O3 (In2O3:H) is highly conductive while maintaining extraordinary transparency, thus making it a very attractive material for applications in optoelectronic devices such as (multijunction) solar cells or light-emitting devices. However, the corresponding metal/In2O3:H contacts may exhibit undesirably high resistances, significantly deteriorating device performance. To gain insight into the underlying efficiency-limiting mechanism, hard X-ray photoelectron spectroscopy is employed to in-situ monitor annealing-induced changes in the chemical structure of the Ag/In2O3:H interface system that is further complemented by ex-situ electron microscopy analyses and contact resistance measurements. The observed evolution of the Ag- and In-related photoelectron line intensities can be explained by significant intermixing across the Ag/In2O3:H interface. The corresponding lineshape broadening of the Ag 3d spectra is attributed to the formation of Ag2O and AgO, which becomes significant at temperatures above approximately 160 °C. However, after annealing to 300 °C, instead of the formation of an insulating AgOx interfacial layer, it is found i) In to be rather homogeneously distributed in the complete Ag/In2O3:H stack, ii) Ag diffusing into the In2O3:H, and iii) an improvement of the contact resistance rather than its often-reported deterioration., Helmholtz‐Association, Robert Bosch Stiftung http://dx.doi.org/10.13039/501100001646, National Natural Science Foundation of China http://dx.doi.org/10.13039/501100001809, Peer Reviewed
- Published
- 2023