1. Defects and Interface Engineering of SnO2 Based Nanomaterials for High Performance Memory Applications
- Author
-
Sean, Li, Faculty of Science, UNSW, Dewei, Chu, Faculty of Science, UNSW, Xu, Zhemi, Materials Science & Engineering, Faculty of Science, UNSW, Sean, Li, Faculty of Science, UNSW, Dewei, Chu, Faculty of Science, UNSW, and Xu, Zhemi, Materials Science & Engineering, Faculty of Science, UNSW
- Abstract
Non-volatile memories with larger capacity, faster operation speed, lower power consumption, smaller size and simpler fabrication process are strongly desired in the big data era. Recently, oxide-based random-access memories (OxRAMs) have been considered as a promising solution to meet these requirements. By achieving multiple resistance states in metal oxides, the memory capacity can be multiplied at the same cell size hence the development of metal oxide switching materials is important for achieving high-performance memory devices. In this thesis, a transparent metal oxide (SnO2) was selected for developing resistive switching-based RRAMs. Three strategies for improving the resistive switching behaviour were proposed and investigated, based on the solution-processed SnO2 thin films, which covered the following aspects:a. Defects engineering: to facilitate multi-level resistance states in metal oxides, defects engineering via cation doping has been investigated. The possibility of forming cationic and ionic defects in SnO2 by doping has been explored through density functional theory. Cationic defects Mn3+ interstitials in Mn-doped SnO2 were synthesized through a new solution-processed approach and by altering the doping level, multi-resistance states in Mn-doped SnO2 have been achieved successfully. b. Layer design: to alter the migration and redox process of defects in metal oxides, an alternative multi-layer structure was designed. By inserting pure SnO2 layer as the ionic defects diffusion barrier, the migration and redox of ionic defects in the Mn-doped SnO2 layer can be modified. Stable multi-level resistive switching, high On/Off ratio, excellent retention and low operation voltage have been achieved. c. Graphene/metal oxide nanocomposites: graphene can be used as electrodes or buffer layer in RRAMs which can increase the device flexibility or modify the switching mechanism. However, due to the high hydrophobic behaviour of graphene, the fab
- Published
- 2018