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We report on, to the best of our knowledge, the first sub-100 fs mode-locked Ho3+-laser in the 2 mu m spectral range employing a disordered co-doped Tm;Ho:CaYAlO4 (Tm,Ho: CALYO) crystal as a gain medium. Pulses as short as 87 fs are produced with an average output power of 27 mW at 80.45 MHz repetition rate. An output power of 96 mW is reached for a pulse duration of 98 fs. (C) 2018 Optical Society of America

Passive mode-locking of a thulium doped Lu3Al5O12 ceramic laser is demonstrated at 2022 nm. By applying different near surface GaSb-based saturable absorber mirrors, stable self-starting mode-locked operation with pulse durations between 2 and 4 picoseconds was achieved at a repetition rate of 92 MHz. The SESAM mode-locked Tm:LuAG ceramic laser exhibits an excellent stability with a fundamental beat note extinction ratio of 80 dB above the noise level. Furthermore, spectroscopic properties of Tm:LuAG ceramics at room temperature are presented. (C) 2017 Optical Society of America

A passively mode-locked Ho:YAG ceramic laser around 2.1 mu m is demonstrated using GaSb-based near-surface SESAM as saturable absorber. Stable and self-starting mode-locked operation is realized in the entire tuning range from 2059 to 2121 nm. The oscillator operated at 82 MHz with a maximum output power of 230 mW at 2121 nm. The shortest pulses with duration of 2.1 ps were achieved at 2064 nm. We also present spectroscopic properties of Ho:YAG ceramics at room temperature. (C) 2016 Optical Society of America

Passive mode-locking of a Tm, Ho:KLu(WO4)(2) laser operating at 2060 nm using different designs of InGaAsSb quantum-well based semiconductor saturable absorber mirrors (SESAMs) is demonstrated. The self-starting mode-locked laser delivers pulse durations between 4 and 8 ps at a repetition rate of 93 MHz with maximum average output power of 155 mW. Mode-locking performance of a Tm, Ho: KLu(WO4)(2) laser is compared for usage of a SESAM to a single-walled carbon nanotube saturable absorber. (C) 2015 Optical Society of America

We propose and demonstrate a new method to reduce the absorption recovery time of semiconductor saturable absorber mirrors operating at the 1060-nm wavelength range. The method is based on controlling the amount of nonradiative recombination centers within the absorbing region by incorporating an InGaP epitaxial layer with a relative large lattice mismatch to GaAs (~2.2 %). The defect density within the absorbing region can be controlled by the thickness of a GaAs buffer layer grown between the InGaP lattice mismatched layer and the InGaAs/GaAs quantum-wells. For thickness of the GaAs buffer of ∼110 nm and∼570 nm the absorption recovery time was∼5 ps and ∼10 ps, respectively. It is important to note that the fast recovery time was achieved without degrading the nonlinear optical properties of the saturable absorber mirror. The practicality of the structures was proved by demonstrating a reliable self-starting operation of a mode-locked Yb-doped fiber laser., QC 20111130

Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a fast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to 5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses, QC 20111129