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1. High pressure optical studies of semiconductors

Author

Zhou, Haiping

Subjects
621.3815
Abstract

Until this work was completed no detailed studies of the low-temperature emission of A10.48gIn0.52As under high pressures were available to the best of our knowledge. We investigated the low-temperature emission of Al0.48gIn0.52AS under high pressures from 1 bar up to 92 kbar, especially with respect to the changes in luminescence mechanisms that occur concurrently with the crossover between the direct- and indirect-related bands.

Published
1992

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