1. Electrically tunable Γ–Q interlayer excitons in twisted MoSe2 bilayers.
- Author
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Huang, Jinqiang, Xiong, Zhiren, He, Jinkun, Wu, Xingguang, Watanabe, Kenji, Taniguchi, Takashi, Lai, Shen, Zhang, Tongyao, Han, Zheng Vitto, and Zhao, Siwen
- Subjects
DEGREES of freedom ,PHOTOLUMINESCENCE measurement ,EXCITON theory ,TRANSITION metals ,BILAYERS (Solid state physics) ,STARK effect - Abstract
• Owing to the formation of hybridized minibands, twisted homobilayer TMDs provide new and intriguing platforms for investigating not only momentum direct K-K intralayer excitons, but also momentum-indirect Γ–K and Γ–Q interlayer excitons. • We have modulated the momentum-indirect Γ–Q and Γ–K transitions of twisted homobilayer MoSe 2 sample (with the angle near 60°) by external electric fields and observed non-zero linear stark shift for these lower-energy peaks. • Power dependent PL spectra reveals the localized nature of moiré excitons. Twist, the very degree of freedom in van der Waals heterostructures, offers a compelling avenue to manipulate and tailor their electrical and optical characteristics. In particular, moiré patterns in twisted homobilayer transition metal dichalcogenides (TMDs) lead to zone folding and miniband formation in the resulting electronic bands, holding the promise to exhibit inter-layer excitonic optical phenomena. Although some experiments have shown the existence of twist-angle-dependent intra- and inter-layer excitons in twisted MoSe 2 homobilayers, electrical control of the interlayer excitons in MoSe 2 is relatively under-explored. Here, we show the signatures of the moiré effect on intralayer and interlayer excitons in 2H-stacked twisted MoSe 2 homobilayers. Doping- and electric field-dependent photoluminescence measurements at low temperatures give evidence of the momentum-direct K–K intralayer excitons, and the momentum-indirect Γ–K and Γ–Q interlayer excitons. Our results suggest that twisted MoSe 2 homobilayers are an intriguing platform for engineering interlayer exciton states, which may shed light on future atomically thin optoelectronic applications. [Display omitted] [ABSTRACT FROM AUTHOR]
- Published
- 2025
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