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Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. External feedback circuits can be efficiently implemented using low-loss silicon nitride (Si3N4) waveguides, which do not suffer from two-photon absorption and can thus handle much higher power levels than conventional silicon photonics. However, co-integrating III-V-based gain elements with tunable external feedback circuits in chip-scale modules still represents a challenge, requiring either technologically demanding heterogeneous integration techniques or costly high-precision multi-chip assembly, often based on active alignment. In this work, we demonstrate Si3N4-based hybrid integrated ECL that exploit 3D-printed structures such as intra-cavity photonic wire bonds and facet-attached microlenses for low-loss optical coupling with relaxed alignment tolerances, thereby overcoming the need for active alignment while maintaining the full flexibility of multi-chip integration techniques. In a proof-of-concept experiment, we demonstrate an ECL offering a 90 nm tuning range (1480 nm–1570 nm) with on-chip output powers above 12 dBm and side-mode suppression ratios of up to 59 dB in the center of the tuning range. We achieve an intrinsic linewidth of 979 Hz, which is among the lowest values reported for comparable feedback architectures. The optical loss of the intra-cavity photonic wire bond between the III-V gain element and the Si3N4-based tunable feedback circuit amounts to approximately (1.6 ± 0.2) dB. We use the ECL as a tunable pump laser to generate a dissipative Kerr soliton frequency comb. To the best of our knowledge, our experiments represent the first demonstration of a single-soliton Kerr comb generated with a pump that is derived from a hybrid ECL.

We report an alternative experimental setup to laterally focus light at an angle of 90 deg relative to turbid, multiple scattering media, using preprocessing wavefront shaping. We compare the measured image quality to one obtained in the usual configuration for focusing light through turbid media, where focusing occurs behind the scattering sample. We demonstrate that the depth of focus in the lateral configuration is of the same order of the usual transversal one because both setups are designed to operate in the deep Fresnel zone. This result shows that this novel, versatile lateral configuration allows for effectively focusing around corners through multiple scattering samples.

Here we report, to the best of our knowledge, the first diode-side-pumped continuous wave (cw) Nd^+3:YVO_4 self-Raman laser operating at 1176 nm. The compact cavity design is based on the total internal reflection of the laser beam at the pumped side of the Nd^+3:YVO_4 crystal. Configurations with a single bounce and a double bounce of the laser beam at the pumped faced have been characterized, providing a quasi-cw peak output power of more than 8 W (multimode) with an optical conversion efficiency of 11.5% and 3.7 W (TEM_00) having an optical conversion efficiency of 5.4%, respectively. Cw output power of 1.8 W has been demonstrated.

Here we report 10 laser emission lines in the attractive deep blue to cyan spectral region from an intracavity frequency doubled Raman laser. The fundamental laser field that drives the Raman laser is based on the three-level transition of Nd:YLF. A maximum extracted quasi-continuous wave (qcw) output power of 0.94 W is achieved in the deep blue to cyan spectral regime.

An intracavity Raman laser based on laser transition in Nd:YLF is reported. Quasi-continuous wave Stokes output power was observed at 990 and 976 nm, and up to 0.88 W of peak output power was obtained at 990 nm.

Channel waveguides based on a polymer, 6-fluorinated-dianhydride/epoxy, which is actively doped with a Nd complex, Nd(thenoyltrifluoroacetone)_3 1,10-phenanthroline, are fabricated by a simple and reproducible procedure, spin coating a photodefinable cladding polymer onto a thermally oxidized silicon wafer, photopatterning, backfilling with the active core polymer, and spin coating with an upper cladding layer. Photoluminescence at 1060 nm from the Nd^3+ ions with a lifetime of 130 μs is observed. Optical gain at 1060 nm is demonstrated in channel waveguides with different Nd^3+ concentrations. By accounting for the waveguide loss of 0.1 dB/cm, an internal net gain of 8 dB is demonstrated for a 5.6-cm-long channel waveguide amplifier. Owing to the nature of the Nd^3+ complex, energy-transfer upconversion affects the gain only at Nd^3+ concentrations above 1×10^20 cm^−3.