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We grew Zn 0.8 Cd 0.2 Se/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates 10°-misoriented toward [1 0 0] direction by molecular beam epitaxy. The growth rates and the Cd composition in the ZnCdSe epilayers on (1 1 1)A substrates were small compared to those on (1 0 0) substrates at the same growth conditions. Therefore, in order to compare (1 1 1) and (1 0 0) samples with the same structures, these were grown separately. The piezoelectric properties were characterized by photoluminescence measurements at 11 K. The emission energies of the (1 1 1) quantum wells shifted toward lower energy compared to those of the (1 0 0) quantum wells with the same well width, owing to the piezoelectric effect. We calculated the internal electric field of these samples to be 0.9 × 10 V/m. The difference from the theoretical value (1.9 × 10 V/m) was discussed. The emission intensities decreased with increasing well width. We observed the screening of the piezoelectric field by the photogenerated carriers.