1. Failure Mechanism Analysis of Single-Event Effect in 4H-SiC Inverters
- Author
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Gu, Yong, Yang, Yurui, Ma, Jie, Wen, Hongyang, Hou, Xiangyu, Hong, Jingjing, Yang, Lanlan, Wei, Jiaxing, Liu, Ao, Huang, Runhua, Bai, Song, Zhang, Long, Liu, Siyang, and Sun, Weifeng
- Abstract
The failure mechanism of single-event burnout (SEB) in 4H-SiC inverter is studied by experiments and simulations. The most sensitive location for heavy ions striking in the 4H-SiC inverter circuit has been identified by pulsed laser experiments. Experimental results demonstrate that the maximum linear energy transfer (LET) value that the 4H-SiC inverter circuit can withstand is exceeding 64.07 MeV
$\cdot $ 2 /mg but not surpassing 92.25 MeV$\cdot $ 2 /mg. Sentaurus TCAD is utilized to reveal the failure mechanism. The incident heavy-ion radiation triggers the activation of parasitic p-n-p and n-p-n transistors, resulting in a latch-up phenomenon within the circuit, consequently leading to the circuit burnout. The revealed failure mechanism gives a guidance for further hardened circuits design.- Published
- 2024
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