Search

In this work, we developed an in situ annealing process to crystallize boron-doped amorphous silicon [a-Si(p+)] layers deposited by atmospheric pressure chemical vapour deposition (APCVD) to form boron-doped polycrystalline silicon [poly-Si(p+)] layers. The influence of the temperature profiles during a-Si(p+) inline deposition on structural, electrical, and passivation properties was studied in detail. The results show that a-Si(p+) layers can be successfully crystallized by fine-tuning the temperature profiles in the postdeposition zones of the APCVD tool. It was observed that the hydrogenation processes during the fast firing play a significant role in enhancing the passivation quality as well as the electrical properties of the in situ annealed poly-Si(p+) layers. The sheet resistance (Rsh) and implied open circuit voltage (iVoc) of the best in situ annealed poly-Si(p+) layers were found to be comparable to the ones that were ex situ annealed in the tube furnace at 950 $^{\circ }$C for 30 min. The sheet resistance of 200 $\Omega$/$\square$ could be obtained on 150-nm thick poly-Si(p+) layers with an (iVoc) of 718 mV. The use of this novel in situ annealing process to form poly-Si(p+) layers opens a new horizon for a lean process sequence without the additional high-temperature annealing step for fabricating solar cells concepts based on passivating contact.

The edge recombination losses of crystalline silicon solar cells become significant when they are cut into smaller pieces to be assembled into modules. With the interdigitated pattern of doped $p$ and $n$ regions on the rear side, the interdigitated back contact (IBC) solar cells can be cut through different doped regions. In this study, the cutting losses in IBC solar cells are investigated and various cutting scenarios are studied. Through simulations and experimental measurements, it is found that the cut losses can be reduced by cutting through the back surface field rather than through the emitter. The losses under low light intensity are reduced to an even greater extent. When a 23% cell is cut into 1/3 pieces, the efficiency can be increased by 1.2%$_\mathrm{rel}$ (cut related losses were improved from 2.0%$_\mathrm{rel}$ to 0.8%$_\mathrm{rel}$) under standard 1-sun testing conditions, compared to cutting through the emitter. Under low light intensity of 0.25 sun, the improvement is around 2.4%$_\mathrm{rel}$. The improvement is mainly due to lower FF losses in the I–V characteristics, and this is further confirmed by Suns–$V_{\text{oc}}$ and PL measurements. In the pFF analysis, the additional losses due to laser damage are also observed. This strategy of cutting through the BSF region in IBC solar cells can be quickly adopted in mass production without the need for additional processes or equipment and both module power and energy yield can be increased.

Hydrogenation of polycrystalline silicon (poly-Si) passivating contacts is crucial for maximizing their passivation performance. This work presents the application of Al2O3 prepared by atomic layer deposition as a hydrogenating capping layer. Several important questions related to this application of Al2O3 are addressed by comparing results from Al2O3 single layers, SiNx single layers, and Al2O3/SiNx double layers to different poly-Si types. We investigate the effect of the Al2O3 thickness, the poly-Si thickness, the poly-Si doping type, and the postdeposition annealing treatment on the passivation quality of poly-Si passivating contacts. Especially, the Al2O3/SiNx stack greatly enhances the passivation quality of both n+ and p+ doped as well as intrinsic poly-Si layers. The Al2O3 layer thickness is crucial for the single-layer approach, whereas the Al2O3/SiNx stack is less sensitive to the thickness of the Al2O3 layer. A thicker Al2O3 layer is needed for effectively hydrogenating p+ compared to n+ poly-Si passivating contact. The capping layers can hydrogenate poly-Si layers with thicknesses up to at least 600 nm. The hydrogenation-enhanced passivation for n+ poly-Si is found to be more thermally stable in comparison to p+ poly-Si. These results provide guidelines on the use of Al2O3 capping layers for poly-Si contacts to significantly improve their passivation performance.

Since single junction c-Si solar cells are reaching their practical efficiency limit. Perovskite/c-Si tandem solar cells hold the promise of achieving greater than 30% efficiencies. In this regard, optical simulations can deliver guidelines for reducing the parasitic absorption losses and increasing the photocurrent density of the tandem solar cells. In this work, an optical study of 2, 3 and 4 terminal perovskite/c-Si tandem solar cells with c-Si solar bottom cells passivated by high thermal-budget poly-Si, poly-SiOxand poly-SiCxis performed to evaluate their optical performance with respect to the conventional tandem solar cells employing silicon heterojunction bottom cells. The parasitic absorption in these carrier selective passivating contacts has been quantified. It is shown that they enable greater than 20 mA/cm2matched implied photocurrent density in un-encapsulated 2T tandem architecture along with being compatible with high temperature production processes. For studying the performance of such tandem devices in real-world irradiance conditions and for different locations of the world, the effect of solar spectrum and angle of incidence on their optical performance is studied. Passing from mono-facial to bi-facial tandem solar cells, the photocurrent density in the bottom cell can be increased, requiring again optical optimization. Here, we analyse the effect of albedo, perovskite thickness and band gap as well as geographical location on the optical performance of these bi-facial perovskite/c-Si tandem solar cells. Our optical study shows that bi-facial 2T tandems, that also convert light incident from the rear, require radically thicker perovskite layers to match the additional current from the c-Si bottom cell. For typical perovskite bandgap and albedo values, even doubling the perovskite thickness is not sufficient. In this respect, lower bandgap perovskites are very interesting for application not only in bi-facial 2T tandems but also in related 3T and 4T tandems.

There are several sensors available in the market to measure the plane-of-array irradiance for photovoltaic applications. The prices of these sensors vary according to the design, calibration procedure, and conducted characterization. In this article, two types of silicon-based sensors with and without temperature correction capabilities are compared with a high-accuracy thermopile pyranometer to check their performance. The obtained results showed that silicon-based sensors deviate from the output of the pyranometers. The tested silicon-based pyranometers overestimate the irradiance with the median bias deviations of around 1.43% (with the average measured irradiance of 256 W/m2). For temperature-corrected silicon pyranometer, the bias deviation is 0.07% with the deviation range of −6.5%–10% (with the average measured irradiance of 257 W/m2). A working-class reference cell was also tested, resulting in a bias deviation of −1.74% and the deviation range of −13%–7% (with the average measured irradiance of 304 W/m2). The effect of air mass on the performance of cost-effective sensors was additionally analyzed. Within the measurement time window, the result also showed that for the silicon-based sensors under tests, the effects of the environmental conditions have the following qualitative order of influence: angle of incidence > red-shift > temperature. The performance of silicon-based sensors also showed seasonal dependence, being more accurate during summertime and wintertime, respectively, for the silicon pyranometer and the working-class reference cell. Finally, using the statistical evaluation, simple linear correction functions are introduced for silicon-based sensors.

Photovoltaic (PV) systems are often exposed to mismatch caused by partial shading, different mounting angles, dust accumulation, cell degradation, and so on. This paper proposes a novel parallel differential power processing (P-DPP) configuration to minimize mismatch-related losses among PV strings. The proposed configuration, called PV to Virtual Bus P-DPP , uses a virtual bus as an input for all P-DPP converters. Since the virtual bus voltage can be selected lower than the DC Bus voltage, components' voltage rating can be reduced. An essential feature of the proposed configuration is the ability of the converters to generate both positive and negative output voltage. Therefore, a bidirectional flyback converter connected to a bridgeless converter is proposed as the P-DPP converter. To find the MPP of each PV string, the Perturb and Observe (P&O) algorithm is implemented. Moreover, a proportional–integral feedback controller controls the virtual bus voltage through the central converter. The benefits of the proposed configuration are discussed, and the operation of the proposed structure is further verified through simulations with the software PLECS. [ABSTRACT FROM AUTHOR]

Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer‐based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve photolithography, inkjet patterning, and laser ablation. This work introduces a novel patterning technique for structuring the rear side of IBC solar cells using the enhanced oxidation characteristics under the locally laser‐doped n++back surface field (BSF) regions with high‐phosphorous surface concentrations. Phosphosilicate glass layers deposited via POCl3diffusion serve as a precursor layer for the formation of local heavily laser‐doped n++BSF regions. The laser‐doped n++BSF regions exhibit a 2.6‐fold increase in oxide thickness compared to the nonlaser‐doped n+BSF regions after undergoing high‐temperature wet thermal oxidation. The utilization of oxide thickness selectivity under laser‐doped and nonlaser‐doped regions serves two purposes in the context of the IBC solar cell, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion. Proof‐of‐concept solar cells are fabricated using this novel patterning technique with a mean conversion efficiency of 20.41%. An industrially viable novel patterning technique for fabrication of interdigitated back contact solar cells using the enhanced oxidation characteristics under laser‐doped back surface field regions is studied. The utilization of oxide thickness selectivity under laser‐doped and nonlaser‐doped regions serves two purposes, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion.

In this article, we develop in parallel two fabrication methods for copper (Cu) electroplated contacts suitable for either silicon nitride or transparent conductive oxide antireflective coatings. We employ alternative seed layers, such as evaporated Ag or Ti, and optimize the Ti–Cu or Ag–Cu contacts with respect to uniformity of plating and aspect ratio of the final plated grid. Moreover, we test plating/deplating sequence instead of a direct current plating or the SiO2 layer approach to solve undesired plating outside the designed contact openings. The main objective of this paper is to explore the physical limit of this contact formation technology keeping the process compatible with industrial needs. In addition, we employ the optimized Cu-plating contacts in three different front/back-contacted crystalline silicon solar cells architectures: 1) silicon heterojunction solar cell with hydrogenated nanocrystalline silicon oxide as doped layers, 2) thin SiO2/doped poly-Si-poly-Si solar cell, and 3) hybrid solar cell endowed with rear thin SiO2/poly-Si contact and front heterojunction contact. To investigate the metallization quality, we compare fabricated devices to reference ones obtained with standard front metallization (Ag screen printing and Al evaporation). We observe a relatively small drop in VOC by 5 to 10 mV by using Cu-plating front grid, whereas fill factor was improved for solar cells with Cu-plated front contact if compared with evaporated Al.

Broadband transparent conductive oxide layers with high electron mobility (μe) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In2O3thin films with high μe(>60 cm2V–1s–1) have been extensively investigated, the research regarding anion doping is still under development. In particular, fluorine-doped indium oxide (IFO) shows promising optoelectrical properties; however, they have not been tested on c-Si solar cells with passivating contacts. Here, we investigate the properties of hydrogenated IFO (IFO:H) films processed at low substrate temperature and power density by varying the water vapor pressure during deposition. The optimized IFO:H shows a remarkably high μeof 87 cm2V–1s–1, a carrier density of 1.2 × 1020cm–3, and resistivity of 6.2 × 10–4Ω cm. Then, we analyzed the compositional, structural, and optoelectrical properties of the optimal IFO:H film. The high quality of the layer was confirmed by the low Urbach energy of 197 meV, compared to 444 meV obtained on the reference indium tin oxide. We implemented IFO:H into different front/back-contacted solar cells with passivating contacts processed at high and low temperatures, obtaining a significant short-circuit current gain of 1.53 mA cm–2. The best solar cell shows a conversion efficiency of 21.1%.

Perovskite/silicon tandem solar cells (TSCs) have the potential to achieve power conversion efficiency exceeding 30%. To be compatible with high-efficiency solution-deposited perovskite top cell, a planar front surface for silicon bottom cell is generally required. However, flat front surfaces result in large light reflection losses and thus reduce the performance of tandem device. To boost light absorption, we design light management antireflective foils made from polydimethylsiloxane (PDMS) polymer carrying random-pyramidal textures with three different pyramid size ranges (1–3 µm, 3–8 µm, 8–15 µm). The optical properties, together with the reflection behavior applied to perovskite/silicon tandem solar cells have been systematically studied. One of the PDMS layer exhibited a relatively strong light-scattering property with a high average haze ratio originated from synergistic effect of the appropriate pyramid size and the uneven random pyramid distribution. Consequently, the short-circuit current density of the tandem device was improved by 1.72 mA/cm2and thus its efficiency increased from 19.38% to 21.93%, after laminating the PDMS-based antireflection coating (ARC) onto the front surface of tandem device. Furthermore, this work provides a facile and cost-effective way to introduce light-management foils and indicates a broad strategy to enhance the performance of solar cells with planar front surface.

The deposition of dust, soil, and microfibers resulting from the surroundings, as well as the growth of minute pollens like moss and fungi, contributes toward photovoltaic (PV) module soiling. Soiling is a widely recognized factor that significantly reduces the power production by acting as a barrier for effective light absorption by the module. The estimated loss in the irradiance and power can be determined with the help of a soiling ratio (SR) parameter, which is the ratio of the short-circuit current (Isc) or the maximum power produced (Pmax) by a soiled module to a clean one. The measured SR is normally not constant throughout a day but changes with the position of the Sun and the amount of dust on the module. This paper proposes an empirical equation to determine the SR at any instant of time of the day based on the Sun's angle of incidence on the module and a single SR value measured at the mid of the day. First, an indoor experiment was done to examine the angular loss dependence of two totally different dust colors for the same SR at normal light incidence. Next, in an outdoor experiment, the SR of an artificially soiled module was measured over the course of the day for three conditions of high, medium, and low daily average irradiance due to variation in cloudiness. Then, an empirical equation is introduced based on an incident angle modifier for soiled and cleaned PV modules. The proposed equation was further used to determine the SR. Finally, the average residuals between the measured and the modeled SRs were determined with the help of root-mean-square deviation. The results showed that the modeled SR was determined with a deviation of ±0.21% and ±0.28%, respectively, for high- and medium-irradiance days, whereas the deviation increased to ±1.04% in the case of low irradiance due to clouds.

This paper presents an analysis of physical mechanisms related to operation and optimization of interdigitated back contact (IBC) poly-silicon-based devices. Concepts of carrier selectivity and tunneling are used to identify the parameters that impact on the fill factor. Then, based on technology computer-aided design (TCAD) numerical simulations, we describe the device performance in terms of transport and passivation. A validation of the model is performed by matching measured and simulated R, T, and external quantum efficiency spectra and electrical parameters. As result of such process, the opto-electrical losses of the reference device are identified. Then, we execute a study of the impact of process parameters on the performance of the IBC device under analysis. Assuming a uniform SiO2 layer, simulation results reveal that both n-type and p-type poly-Si contacts can be theoretically perfect (i.e., approx. lossless), if assuming no interface recombination but considering tunneling of both carrier types. In other words, there exists an optimum oxide thickness (1 nm) for which majority carriers tunneling works already very well, and minority tunneling is still low enough to not result in significant recombination. Moreover, SiO2 thickness up to maximum 1.6 nm is crucial to achieve high efficiency. Regarding rear geometry analysis, the efficiency curve as a function of emitter width peaks at 70% of pitch coverage. Further, it is shown that diffused dopants inside crystalline silicon make the device resilient to passivation quality. Finally, the calibrated model is used to perform an optimization study aiming at calculating the performance limit. The estimated performance limit is 27.3% for a 100-μm-thick bulk, 20-nm-thick poly-silicon layers, silver as rear contact, and double ARC.

Power generation from photovoltaic (PV) modules suffers from heat losses that are a function of the temperature coefficient of maximum power (γ) of the PV module. Another loss mechanism is shading, where the power output of the module and ultimately the system can be severely compromised. Various approaches such as passive, active, or smart bypasses and module level power electronics have been employed to minimize the effects of shading on a PV module. So far, the performance of a PV module under shading had only been addressed vaguely and was generally described qualitatively. Therefore, a probability-based parameter called shading tolerability (ST) was recently developed to quantify the behavior of PV modules under all kinds of shade. However, the observations pertaining to ST were only carried out at 25 °C ambient temperature. Hence, this paper aims to: 1) investigate whether ST is an innate property of a PV module by formulating a correlation between ST and ambient temperature, 2) classify various PV technologies based on ST and γ, and 3) develop a PV module selection map. Theoretical result shows that thermal features of a PV module (nominal operational cell temperature and γ) can influence the PV module ST by 12.25%. Also, an analytical limit is derived for ST variation with respect to ambient temperature change $(\Delta \text{ST}/ \Delta T_{a})$. The proposed selection map, which is similar to the Ragone plot for energy-storing devices, is validated using the data of 27 PV systems installed in the Netherlands. The map can be used for optimal selection of PV modules for the design of PV systems simply by knowing the specifications of the module along with the meteorological conditions of the installation location.

Imaging techniques, like electroluminescence and dark lock-in thermography, are valuable quality control tools as they yield quantitative and spatially resolved information about the device. In this paper, we isolated some of the conductive foil–cell interconnections of back-contact solar cells to study the appearance of these intentional failures in electroluminescence, dark lock-in thermography, and series resistance images. It has been found that isolated emitter-to-foil contacts are clearly visible in the three imaging techniques, as they show characteristic features that deviate from the features typical of functioning emitter-to-foil dots. Isolated base-to-foil contacts are instead invisible in the images obtained by electroluminescence and only hardly visible in the images obtained by the other two techniques. Only after a large amount of contacts are isolated, a local current redistribution or drastic series resistance increase is noticeable. Two graphical methods for the automatic identification of isolated emitter-to-foil contacts in electroluminescence, dark lock-in thermography, and series resistance images were also designed, showing a success rate of 97% in the investigated cells. Such techniques could represent useful tools for implementation in inline quality control processes. Moreover, the techniques and conclusions drawn in this paper can be extended to a large number of other conventional and emerging photovoltaic technologies.

Solar road technology provides an opportunity to harvest the vast, albeit dispersed, photovoltaic (PV) energy, while maximizing the land utilization. Deriving experience from the pioneering 70-m solar bike path installed in the Netherlands, this paper highlights the operational challenges and performance parameters using the first-year measured data. The theoretically predicted energy yield is compared with the measured energy yield. Based on the best performing module, the benchmark annual energy yield is set to 85-90 kWh/m2 specific to the installation site. It is shown that this value can be bettered by about 1.5 times if different cell technology such as monocrystalline is used. With different installation sites around the world, thermal behavior as well as annual energy yield changes. Theoretical proof is offered that it is not unreasonable to expect an annual energy yield in the upwards of 150 kWh/m2 with solar road energy harvesting technology. For example, the annual yield is found to be 213 kWh/m2 if the same model is simulated for a solar road PV installation in India, which increased further with the use of monocrystalline to almost 300 kWh/m2.

Despite several decades of research in the field of photovoltaic (PV) systems, shading tolerance has still not been properly addressed. PV modules are influenced by shading concerning many factors, such as number and configuration of cells in the module, electrical and thermal characteristics of the cells, number and type of bypass circuits, electrical characteristics of bypass elements, and shading profile features. Along with the random nature of shading profile over the lifetime of a PV system, it is difficult to choose the best module for a location which is most of the time sunny, partly cloudy, or cloudy. This paper suggests a measurable parameter, the so-called shading tolerability (ST), to classify PV modules regarding the ability to oppose shading effects. Based on mathematical and probability analysis, the ST parameter is extracted and then measured using a large area steady state solar simulator. Finally, the results of on-field experiments are presented as a proof for the shading quantification method and its significant contribution to performance ratio improvement.

A major limitation in current liquid-phase crystallized (LPC) silicon thin-film record solar cells is optical losses caused by their planar glass-silicon interface. In this study, silicon is grown on nanoimprinted periodically, as well as randomly textured glass substrates, and successfully implemented into state-of-the-art LPC silicon thin-film solar cells. Compared with an optimized planar reference device, both textures enhance absorption of light. Interlayer and process optimization allowed achieving a material quality comparable with the planar reference device. On the random texture, an open-circuit voltage above 630 mV was obtained, as well as an external quantum efficiency exceeding the planar reference device by +3 mA/cm2.

The photovoltaic (PV) industry has recently become more oriented toward n-type c-Si solar cells. Among the different n-type solar cell architectures, bifacial cells are quickly emerging. The open-rear configuration of a bifacial device results in high transmittance (T) losses at long wavelengths (>1000 nm). This limitation is usually overcome at the module level either by using a bifacial encapsulation or by placing a reflective foil on the rear side. In this paper, we have investigated the application of a distributed Bragg reflector (DBR) and TiO2-based white paint (WP) as alternative metal-free back-reflector options applied to the textured open-rear of bifacial n-Pasha cells. Because of the high T losses at long wavelengths of the DBR applied on textured surface, its design and fabrication is studied in detail. The dielectric (DBR and WP) and optimized Ag back-reflectors, which are used as a reference, are applied to bifacial n-Pasha cells, and their performance is evaluated. In particular, we demonstrate T below 20% at 1200 nm by optimizing the DBR thickness for textured surfaces. In addition, the optimized DBR and WP show performance comparable with a state-of-the-art Ag back-reflector. The highest increase of the conversion efficiency is measured for the WP back-reflector: +0.34% absolute compared with n-Pasha measured with no-additional back-reflector.

We present modulated surface textureson glass substrates for improved light trapping in thinfilm silicon solar cells. The surface morphology, the roughness spectral distribution, and the scattering properties of the modulated surfacetextured substrates were characterized. We deposited solar cells on the modulated surfacetextured substrates and observed enhancement in the performance compared to a solar cell deposited on textured ZnO:Al reference substrates.

The share of solar energy in the electricity mix increases year after year. Knowing the production of photovoltaic (PV) power at each instant of time is crucial for its integration into the grid. However, due to meteorological phenomena, PV power output can be uncertain and continuously varying, which complicates yield prediction. In recent years, machine learning (ML) techniques have entered the world of PV power forecasting to help increase the accuracy of predictions. Researchers have seen great potential in this approach, creating a vast literature on the topic. This paper intends to identify the most popular approaches and the gaps in this discipline. To do so, a representative part of the literature consisting of 100 publications is classified based on different aspects such as ML family, location of PV systems, number of systems considered, features, etc. Via this classification, the main trends and gaps can be highlighted while offering advice to researchers interested in the topic.