Search

Your search keyword '"Isella G"' showing total 16 results
Start Over Author "Isella G" Publication Type Magazines
16 results on '"Isella G"'

1. Spin-charge interconversion in heterostructures based on group-IV semiconductors

Author

Bottegoni, F., Zucchetti, C., Isella, G., Bollani, M., Finazzi, M., and Ciccacci, F.

Abstract

Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent a powerful tool to investigate spin transport in metals, semiconductors and metal/semiconductor heterostructures. The possibility to convert a spin current into a charge current (and vice versa) allows for the design of efficient spin injection/detection schemes, even without the use of ferromagnets, to unravel fundamental spin transport properties. The article reviews the recent advances in the investigation of the spin-charge interconversion phenomena in platforms based on group-IV semiconductors. Convenient experimental architectures to inject and detect spin currents in Ge and Si are discussed, as well as diffusion models for spin transport in these semiconductors.

Published
2020
Full Text
View/download PDF

14. Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate

Author

Bietti, S, Sanguinetti, S, Somaschini, C, Koguchi, N, Isella, G, Chrastina, D, and Fedorov, A

Abstract

We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.

Published
2009

15. Structural Homogeneity of nc-Si Films Grown by Low-Energy PECVD

Author

Le Donne, A., Binetti, S., Isella, G., and Pizzini, S.

Abstract

Nanocrystalline silicon is considered one of the most promising materials for thin-film solar cells. For such an application, one of the critical issues yet unsolved is to obtain a good structural uniformity along the film growth direction to yield high fill factors and open-circuit voltages. In this article, Raman spectroscopy was used to obtain crystallinity in-depth profiles of samples grown at a high growth rate by low-energy plasma-enhanced chemical vapor deposition (PECVD) using different SiH4and H2fluxes, all yielding the same dilution factor. The results showed that the total flow rate strongly affects the structural uniformity of nanocrystalline silicon films.

Published
2008
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results