1. Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes
- Author
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Ji, Jianli, Liu, Ting, He, Zhuokun, Fang, Chunlei, Yan, Xuejun, Chen, Minghao, Shen, Zhijie, Sun, Maosong, Zhang, Jicai, and Sun, Wenhong
- Abstract
High-quality semipolar (11–22) AlN films with a thickness of 8.4 µm are grown on m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The full widths at half-maximum (FWHMs) of X-ray rocking curves (XRCs) for such films are as small as 641? and 346? along [11–23]AlNand [1–100]AlN, respectively. Ohmic contacts with a specific contact resistance of 0.792 O·cm2are achieved on the unintentionally doped (11–22) AlN films by depositing a Ti/Al/Ni/Au metal stack, combined with high-temperature rapid annealing at 950 °C. Based on the good crystal quality and ohmic contacts, lateral Schottky barrier diodes (SBDs) are fabricated on the semipolar AlN film. The Ni/Au-AlN SBDs exhibit an ideality factor nof 6.5 and an effective Schottky barrier height (SBH) of 1.12 eV at room temperature. At high temperatures, the ideality factor nfalls, while the effective SBH grows, indicating lateral nonuniformities at the metal/semiconductor contact, which can be adequately explained by an inhomogeneous model. Moreover, the large band gap of AlN enables the manufactured SBDs to operate reliably even at a temperature of 450 K.
- Published
- 2024
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