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The field of thermoplasmonics has thrived in the past decades because it uniquely provides remotely controllable nanometer-scale heat sources that have augmented numerous technologies. Despite the extensive studies on steady-state plasmonic heating, the dynamic behavior of the plasmonic heaters in the nanosecond regime has remained largely unexplored, yet such a time scale is indeed essential for a broad range of applications such as photocatalysis, optical modulators, and detectors. Here, we use two distinct techniques based on the temperature-dependent surface reflectivity of materials, optical thermoreflectance imaging (OTI) and time-domain thermoreflectance (TDTR), to comprehensively investigate plasmonic heating in both spatial and temporal domains. Specifically, OTI enables the rapid visualization of plasmonic heating with sub-micron resolution, outperforming a standard thermal camera, and allows us to establish the connection between the optical absorptance and heating efficiency as well as to analyze plasmonic heating dynamics on the millisecond scale. Using the TDTR technique, we, for the first time, study the optical resonance-dependent heat-transfer dynamics of a nanometer-scale plasmonic structure in the nanosecond regime and use a detailed computational model to extract the impulse response and thermal interface conductance of a multilayer plasmonic structure. The study reveals a quantitative relationship between the dimensions of the nanopatterned structure and its spatiotemporal thermal response to the light pulse excitation, a thermoplasmonic effect resulting from the spatial distribution of the absorbed electromagnetic energy. We also conclude that the two thermoreflectance techniques provide necessary feedback to nanoscale thermoplasmonic heat management, for which optimization in either heating power or temperature decay speed is needed.

The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal–oxide–semiconductor field-effect transistor (MOSFET) at 60 mV dec−1at room temperature and therefore precludes lowering of the supply voltage and overall power consumption1,2 . Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier3 . Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel4–12 . Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain current of 510 μA μm−1and a sub-thermionic subthreshold slope, and is essentially hysteresis-free. Negative differential resistance was observed at room temperature in the MoS2negative-capacitance FETs as the result of negative capacitance due to the negative drain-induced barrier lowering. A high on-current-induced self-heating effect was also observed and studied. A field-effect MoS2 transistor with a negative capacitor in its gate shows stable, hysteresis-free performance characterized by a sub-thermionic sub-threshold slope.