Search

In this work, we report on the material properties of superconducting heavily boron-doped polycrystalline Silicon-On-Insulator (SOI) thin layers fabricated by pulsed laser induced recrystallization under experimental conditions compatible with high volume CMOS integration. This approach combines boron implantation and ultra-violet nanosecond laser annealing (UV-NLA) to reach maximum dopant activation by exceeding boron solid solubility in silicon. For our process conditions, material characterizations revealed five laser annealing regimes, including the SOI full-melt, which leads to the formation of superconducting polycrystalline layers. The average critical temperature was found to be around 170 mK, neither influenced by energy density nor the number of laser pulses. In addition, thanks to low temperature measurements coupled with magnetic field variations, we highlighted a type II superconductor behavior due to strong impurity effect. The deducted average effective coherence length of hole pairs in our layers was estimated around 85 nm.

The problematics of contacts optimization on germanium metal-oxide-semiconductor field-effect transistors suffers from a gap between fundamental studies and the structures obtained after full processing. The contact properties of metals on Ge were so far mostly investigated on weakly n-doped samples under the pure thermionic emission regime. These experimental conditions are suitable for an accurate extraction; the measured Schottky barrier height (SBH) being usually large and linked to the interfacial current density by a relatively simple Arrhenius relationship. However, a device-oriented approach would consist in meeting the contact resistivity requirements in the ohmic regime for metallic contacts on a highly doped semiconductor (e.g., doped source and drain) through the choice of metal, interface preparation, and doping conditions. We hereby detail SBH extractions based on contact resistance (Rco)measurements on highly n- and p-doped Ge, where the predominant tunnel current component results in ohmic behavior. We applied this methodology to our fully processed germanium-on-insulator (GeOI) samples with Ti-based contacts, yielding effective barriers of 0.32eVfor electrons and 0.15eVfor holes. The method provides a good physical understanding of the technological factors impacting the electrical properties, enabling to define paths toward ohmic-contact optimization in the context of device integration on GeOI.