8 results on '"Nikitina, Ekaterina"'
Search Results
2. Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs
- Author
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Blokhin, Sergey A., Maleev, Nikolai A., Kuzmenkov, Alexander G., Lott, James A., Kulagina, Marina M., Zadiranov, Yurii M., Gladyshev, Andrey G., Nadtochiy, Alexey M., Nikitina, Ekaterina V., Tikhomirov, Vladimir G., Ledentsov, Nikolai N., and Ustinov, Viktor M.
- Abstract
Detailed investigation of anomalous modal behavior in fabricated bottom-emitting intra-cavity contacted 960 nm range vertical cavity surface emitting lasers (VCSELs) have been performed. At low currents the broad-aperture VCSELs show multi-mode operation at 945 nm via whispering gallery-like modes. Subsequent increase of pump current results in rapid increase of fundamental mode intensity and switching to a pure single transverse mode lasing regime at 960 nm with the higher slope efficiency. As a result record single transverse mode output power of 15 mW with a side-mode-suppressionratio (SMSR) above 30 dB was achieved. The observed phenomena cannot be explained by oxide-index guiding or changes in current pumping. 2D heat transport simulations show a strong temperature gradient inside the microcavity due to an effective lateral heat-sinking. This creates an effective waveguide and results in lower optical losses for the fundamental mode. At fixed pump current in pulsed regime (pulse width < 400 ns) high-order modes dominate, however the subsequent increase of pulse width leads to a rapid rise of optical power for the fundamental mode and SMSR increasing. Thus the self-heating phenomena play a crucial role in observed VCSEL unusual modal behavior.
- Published
- 2012
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3. Quantum-chemical study of the interface formed by carboxylic species on TiO2 nanoparticles. 1. Nanoparticle surface
- Author
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Sheka, Elena F., Nikitina, Ekaterina A., Zayets, Valentin A., Ginzburg, Ilya Ya., and Schoonman, Joop
- Abstract
Abstract The current paper presents results of a quantum-chemical study of the surface structure of nanoparticles of both rutile and anatase crystallographic modifications. Different stages of the surface relaxation are discussed. Water adsorption is considered. The calculations were performed in the spd-basis by using semi-empirical quantum-chemical codes, both sequential and parallel. The results are mainly addressed to the study of the interface formed by titania nanoparticles and a set of carboxylated species, namely, benzoic, bi-isonicotinic acids as well as tris-(2,2′-dcbipyridine) Fe(II) complex placed on the surface of either rutile or anatase polymorphs.
- Published
- 2005
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4. Fumed silica – rheological additive for adhesives, resins, and paints
- Author
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Barthel, Herbert, Dreyer, Michael, Gottschalk‐Gaudig, Torsten, Litvinov, Victor, and Nikitina, Ekaterina
- Abstract
Fumed silica, a synthetic silicon dioxide, is a powerful rheological additive for resins and paints to introduce thixotropy or even a yield point. The rheological effectiveness of fumed silica is based on its ability to form percolating networks which immobilize large volumes of liquid. By a combination of advanced rheological experiments, spectroscopical investigations, and quantum chemical calculations it could be demonstrated that the formation and stability of the silica network is strongly influenced by particle‐resin interactions. The results can be used to develop comprehensive models, which explain the rheological performance of different grades of fumed silica in different resins.
- Published
- 2002
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5. H1° histone and differentiation of dendritic cells. A molecular target for tumor‐derived factors
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Gabrilovich, Dmitry I., Cheng, Pingyan, Fan, Yuhong, Yu, Bin, Nikitina, Ekaterina, Sirotkin, Allen, Shurin, Michael, Oyama, Tsunehiro, Adachi, Yasushi, Nadaf, Sorena, Carbone, David P., and Skoultchi, Arthur I.
- Abstract
Dendritic cells (DC) play a central role in antitumor immune responses. Abnormal differentiation of DC and their inability to stimulate T cells are important factors in tumor escape from immune‐system control. However, the mechanisms of this process remain elusive. Here, we have described one possible molecular mechanism that involves replacement linker histone H1°. A close association between expression of H1° and DC differentiation in vitro has been found. DC production in H1°‐deficient mice was decreased significantly, whereas generation and function of macrophages, granulocytes, and lymphocytes appear to be normal. However, these mice had a significantly reduced response to vaccination with antigens. Tumor‐derived factors considerably reduced h1° expression in hematopoietic progenitor cells. We have demonstrated that transcription factor NF‐κB is involved actively in regulation of h1°. Thus, H1° histone may be an important factor in normal DC differentiation. Tumor‐derived factors may inhibit DC differentiation by affecting H1° expression.
- Published
- 2002
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6. High-spin silicon fullerene Si<INF>60</INF> and its oligomers
- Author
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Sheka, Elena F., Nikitina, Ekaterina A., Zayets, Valentin A., and Ginzburg, Ilya Ya.
- Abstract
High-spin states of the Si
60 fullerene and its oligomers are considered semiempirically by using sequential and parallel implementations of the AM1 codes. The states are energetically favorable and nearly degenerated over triplet, quintet, and septet spins. All atoms of the Si60 fullerene are in sp3-configuration, which is supported by atomic spin density in addition to electron density, the latter to be responsible for the formation of chemical bonds. Spotted distribution of spin density over atoms provides molecular magnetism of the molecule. A similar picture is disclosed for oligomers {Si60 }n with n up to 8, which according to computational results should be magnetic with a fractal-like distribution of spin density over atoms. Opposite the latter, composites Si60 C60 and Si60 H60 behave conventionally and are nonmagnetic. A way of the Si60 fullerene synthesizing is suggested via the above composite product as intermediates. The considered oligomers are proposed as a model of silicon nanofibers observed recently. © 2002 Wiley Periodicals, Inc. Int J Quantum Chem, 2002- Published
- 2002
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7. Combination of γ-irradiation and dendritic cell administration induces a potent antitumor response in tumor-bearing mice: Approach to treatment of advanced stage cancer
- Author
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Nikitina, Ekaterina Yu. and Gabrilovich, Dmitry I.
- Abstract
We investigated a new approach to the treatment of advanced stage cancer, a combination of apoptosis-inducing therapy and dendritic cell (DC) administration. MethA sarcoma and C3 tumor containing defined tumor-specific antigens in form of peptides' epitopes were selected as experimental mouse models. Sites of established subcutaneous tumors were γ-irradiated with 10 Gy 35 times with 45 day interval. DCs generated from bone marrow of syngeneic mice were injected i.v. and s.c. after each irradiation. A large number of cell tracker-labeled DCs accumulated at the site of the irradiated tumor after s.c. injections. This effect was not observed in non-irradiated tumors. Almost all of these DCs bound GFP-labeled MethA cells in tumor tissue. Interferon-γ production by splenocytes in response to the tumor-specific MHC class I matched peptides was determined by ELISPOT assays. The combination of γ-irradiation and DC administration, but not each of the treatments alone resulted in a significant increase in T cell response to the specific, but not to the control peptides. An increased proportion of tumor peptide-specific CD8+-cells was found only in that group of mice using staining with tetramers. DCs with defective presentation of antigen via MHC class I or MHC class II pathways were unable to induce peptide-specific T cell response. The combination of γ-irradiation and DC administration but not each of the treatments alone resulted in a dramatic antitumor effect. A substantial proportion of mice completely rejected their tumors (80% in case of MethA sarcoma and 40% in case of C3 tumor). In the rest of the mice, tumor growth was notably suppressed or completely blocked. These data suggest that the combination of apoptosis-inducing therapy and DC administration may be an attractive approach to the treatment of advanced cancer. © 2001 Wiley-Liss, Inc.
- Published
- 2001
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8. Influence of PE‐ALD of GaP on the Silicon Wafers Quality
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Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitriy A., Morozov, Ivan A., Mozharov, Alexey M., Nikitina, Ekaterina V., Zelentsov, Kirill S., Darga, Arouna, Le Gall, Sylvain, and Kleider, Jean‐Paul
- Abstract
An attractive method of low‐temperature plasma‐enhanced atomic layer deposition (PE‐ALD) of GaP on silicon wafer was recently proposed. In the present paper, the influence of the growth process on the quality of silicon wafers is explored by space charge capacitance techniques, C–Vprofiling and deep level transient spectroscopy (DLTS). No DLTS peak is observed for PE‐ALD GaP deposited onto n‐type wafer, meaning that the defect concentration is very low (less than 1 × 1012cm−3) and that the growth process does not affect the properties of the n‐Si wafer. For boron‐doped p‐type silicon, C–Vprofiling shows that there is no deactivation of boron doping after the PE‐ALD process, as could have been expected from the presence of hydrogen in the plasma. Measurements on the reference Schottky diodes formed on the p‐type Si wafer reveal the presence of the well‐known Fe interstitial defects at the position EV+ 0.38 eV with a concentration of 3 × 1013cm−3. PE‐ALD of GaP leads to a modification of the response of this defect and to the appearance of another response in the low temperature range, possibly related to changes in the Fe interstitial defect environment or configuration. However, deep‐levels were not detected in p‐Si after PE‐ALD, meaning that the quality of p‐Si does not degrade. Low‐temperature plasma‐enhanced atomic layer deposition is a perspective method for fabrication of multi‐junction solar cells on silicon wafers. According to DLTS measurements, it does not lead to deep level formation in n‐ and p‐type wafers after growth of GaP at temperature below 400 °C. The boron deactivation by hydrogen is not observed in p‐Si for used growth conditions.
- Published
- 2017
- Full Text
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