Search

Your search keyword '"Okano N"' showing total 2 results
Start Over Author "Okano N" Publication Type Magazines
2 results on '"Okano N"'

2. Pulsed electron-beam annealing of phosphorus-implanted silicon

Author

Inada, T., Sugiyama, T., Okano, N., and Ishikawa, Y.

Abstract

Electrical properties of phosphorus-implanted silicon annealed by a single shot of a high-power pulsed electron beam have been studied by differential Hall-effect and sheet-resistivity measurements. Nearly 100% electrical activation of implanted phosphorus can be obtained after electron-beam annealing at an incident energy density of 0.92 J/cm2. Uniformly distributed carrier concentration profiles have been formed by electron-beam annealing.

Published
1980

Catalog

Books, media, physical & digital resources
See catalog results