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A quantum beam of conserved particles is described as a Stationary Incoherent Superposition of Wave packets (SISOW). Mean values of a SISOW are time-independent confirming that the SISOW describes a stationary flux of particles. The SISOW is a general entity that contains the Hamiltonian eigenstates as a particular limit. The decomposition of the SISOW into wave packets provides intrinsic dynamic information which is not accessible from Hamiltonian eigenstates. Within the SISOW approach an exhaustive framework can be developed to be able to study dynamic phenomena in quantum electronic devices such us current fluctuations, relaxation and transient phenomena.

In this work, we demonstrate that the limitations of previous simulation tools for resonant tunneling diodes based on the Wigner function approach, can be overcome by coupling a classical Monte Carlo solver to the quantum Liouville equation, the former being applied to regions far enough from the double barrier, where quantum effects are not present. This allows us to extend the simulation domains up to hundreds of nanometers, without paying a penalty in computational burden. It is shown that this large domains are necessary to obtain an accurate description of device behavior. By using physical parameters corresponding to those of actual devices, we have found current oscillations and a plateaulike behavior in the negative conductance region in accordance to experimental I-Vcharacteristics obtained on resonant tunneling diodes.