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The main requirements for skin-attachable memory devices are flexibility and biocompatibility. We represent a flexible, transparent, and biocompatible resistive switching random access memory (ReRAM) based on gold-decorated chitosan for future flexible and wearable electronics. The device with an Ag/Au–chitosan/Au cross-bar structure shows nonvolatile ReRAM properties. This fabricated Au–chitosan-based biocompatible ReRAM (bioReRAM) shows reliable bipolar memory performance with mechanical flexibility. The device shows essential memory characterizations including long data retention and hundreds of switching cycles. The origin of the resistance switching properties is related to trap-assisted space-charge-limited conduction in the high-resistance state and formation/annihilation of a conductive filament in the low-resistance state. This transparent bioReRAM is a viable candidate for flexible and biodegradable nanoelectronic devices.

Implementation of biocompatible materials in resistive switching memory (ReRAM) devices provides opportunities to use them in biomedical applications. We demonstrate a robust, nonvolatile, flexible, and transparent ReRAM based on potato starch. We also introduce a biomolecular memory device that has a starch–chitosan composite layer. The ReRAM behavior can be controlled by mixing starch with chitosan in the resistive switching layer. Whereas starch-based biomemory devices which show abrupt changes in current level; the memory device with mixed biopolymers undergoes gradual changes. Both devices exhibit uniform and robust programmable memory properties for nonvolatile memory applications. The explicated source of the bipolar resistive switching behavior is assigned to formation and rupture of carbon-rich filaments. The gradual set/reset behavior in the memory device based on a starch–chitosan mixture makes it suitable for use in neuromorphic devices.

A solution-processed, chitosan-based resistive-switching memory device is demonstrated with Pt/Ag-doped chitosan/Ag structure. The memory device shows reproducible and reliable bipolar resistive switching characteristics. A memory device based on natural organic material is a promising device toward the next generation of nonvolatile nanoelectronics. The memory device based on chitosan as a natural solid polymer electrolyte can be switched reproducibly between high and low resistance states. In addition, the data retention measurement confirmed the reliability of the chitosan-based nonvolatile memory device. The transparent Ag-embedded chitosan film showed an acceptable and comparable resistive switching behavior on the flexible plastic substrate as well. A cost-effective, environmentally benign memory device using chitosan satisfies the functional requirements of nonvolatile memory operations.