Search

We determine the infrared absorption spectra of a gas due to evanescent plasmonic electromagnetic fields in a system where surface interactions (physisorption and chemisorption) are demonstrably negligible. The plasmonic host material, the degenerate semiconductor CdO:Dy, has high mobility (366–450 cm2/(V s)) and carrier density ((0.6–3.5) × 1020cm–3), and therefore supports low-loss surface plasmon resonances in the mid-IR. This high-mobility layer gives the highest resolution observed in a plasmonic conducting material in the infrared, higher than that of gold and rivaling that of silver. The high resolution permits a new understanding of the nature of the interaction of emerging fields with molecular transitions. Using different carrier concentrations, the resonance condition of the surface plasmon polariton (SPP) frequency (ωSPP) and N2O vibrational absorption spectral frequency (ωN2O) can be controlled, thereby allowing a critical test of field–molecule interactions. Experiment and theory both indicate a dispersive N2O line shape for ωSPP< ωN2O, an absorptive line shape for ωSPP< ωN2O, and an abrupt change between the two when the resonance condition ωSPP< ωN2Ois reached. A first-order expansion of the Airy equation describes this behavior analytically. The SPP surface enhancement is 6.8 ± 0.5 on-resonance, lower than enhancements observed in other systems, but in agreement with recent quantitative reports of surface enhanced infrared reflection absorption spectroscopy (SEIRA). Our results show that interactions of infrared SPPs with molecular vibrations are in the weak coupling limit, and that enhancements comparable those reported for noble metals can be achieved.

We present experimental measurements of the thermal boundary conductance (TBC) from 78–500 K across isolated heteroepitaxially grown ZnO films on GaN substrates. This data provides an assessment of the underlying assumptions driving phonon gas-based models, such as the diffuse mismatch model (DMM), and atomistic Green’s function (AGF) formalisms used to predict TBC. Our measurements, when compared to previous experimental data, suggest that TBC can be influenced by long wavelength, zone center modes in a material on one side of the interface as opposed to the ‘“vibrational mismatch”’ concept assumed in the DMM; this disagreement is pronounced at high temperatures. At room temperature, we measure the ZnO/GaN TBC as 490[+150,–110] MW m–2K–1. The disagreement among the DMM and AGF, and the experimental data at elevated temperatures, suggests a non-negligible contribution from other types of modes that are not accounted for in the fundamental assumptions of these harmonic based formalisms, which may rely on anharmonicity. Given the high quality of these ZnO/GaN interfaces, these results provide an invaluable, critical, and quantitative assessment of the accuracy of assumptions in the current state of the art computational approaches used to predict phonon TBC across interfaces.

Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance from 1.0 to 86.3%. By combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs.

Abstract