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This paper presents the development of a color calibration method based on spectrally reproduced colors produced by multi-primary color narrow-band LED’s. The additive mixture of the primary colors can spectrally reproduce an object color. This approach has been used in our work to overcome the insufficient calibration results obtained by commonly used color targets such as the Macbeth Chart. The method has been tested using a developed prototype of digitally controlled light source calibrated to simulate object color under D65 Daylight standard illumination. The method allows for obtaining of the average color difference for the calibrated XYZ camera of ∆E=0.79 and shows significant improvement in comparison with calibration using standard Macbeth (∆E=1.47). Moreover, we explain the advantages of color calibration with usage of multi-primary light source with regard to the amount of the primary colors.

The photocatalytic properties for the overall splitting of water for a single-phase solid solution of In2O3with Y2O3, such as YxIn2-xO3, were studied in the xrange of 0.9−1.5. The photocatalytic activity of YxIn2-xO3combined with RuO2as a promoter increased with increasing x, reached a maximum at x1.3 and decreased with further increase in x. The highest activity was 2.6-fold larger than that reported for x1.0. The lattice constant for x1.0 increased by 1.2% for x1.5 by the replacement of an In3ion with a Y3ion. The primary absorption band for YxIn2-xO3shifted from 350 nm for x1.0 to 302 nm for x1.5. The Raman spectra of YxIn2-xO3showed that the strong peak at 309 cm-1for x0 was weakened with increasing x, followed by the appearance of broad peak at around 386 cm-1, suggesting that the octahedral structures of both InO6and YO6were deformed in the solid solution. The DFT calculation for YxIn2-xO3showed that the top of the valence band (HOMO) was composed of the O 2p orbital, whereas the bottom of the conduction band (LUMO) was formed by the In 5s O 2p orbitals. The photocatalytic activity of YxIn2-xO3as a function of xis discussed on the basis of changes in the geometric and electronic structures.