1. Dual-Layer Proton Irradiation for Passive Component Enhancement and Noise Coupling Suppression on CMOS Process
- Author
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Herdian, Hans, Inoue, Takeshi, Shirane, Atsushi, and Okada, Kenichi
- Abstract
This work presents the development of a dual-layer proton irradiation profile to decrease the fluence required to create a thermally stable localized high-resistivity silicon (HR-Si) substrate for on-chip passive component enhancement and to create a guard band to suppress noise coupling. Additional irradiation was done on the Si-SiO2 interface to prevent conductive layer formation and reduce the main irradiation’s fluence requirement. The thermally stable dual-layer profile was optimized experimentally by applying several interface and main irradiation fluence combinations to the on-chip inductor and comparing the quality factor before and after annealing. The optimum total fluence found for the dual-layer profile was
${4} \times {10}^{{14}}$ ${22}~\mu $ $\mu $ - Published
- 2024
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