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To study the sputtering induced by the electronic stopping power dE/dx, single crystals of yttrium iron garnet Y3Fe5O12(or YIG) have been irradiated at room temperature with 195 MeV 86Kr, 400 MeV 181Ta and 150 MeV 238U ions beam. The number of sputtered iron and yttrium atoms collected upon aluminium foil placed in front of the target was measured using Rutherford backscattering spectrometry (RBS) with a 2 MeV 4He Beam. The experimental results show that the electronic stopping power threshold of sputtering Tsin this garnet is 16 ± 3keV. This value is four times higher than the electronic stopping power threshold damage creation Tein the same range of velocity ions. The sputtering yield increases linearly within the experimental errors with dE/dx. Moreover, the sputtering is non-stoichiometric.

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In this paper, we investigate the possibility to use the pulsed excimer laser ablation technique for depositing Si1−xGex thin films both onto single-crystal silicon and fused quartz substrates. It is demonstrated that the film composition, surface morphology and structural properties of the deposits depend strongly on several parameters like the laser fluence and the nature as well as the temperature of the substrate during the deposition process.

Polycrystalline silicon-germanium (poly-SiGe) films can be an attractive alternative to poly-Si in several technologies like TFTs where thermal budget allowances may be limited. In this work, we investigate the formation of poly-Si1−xGex films by using a XeCl pulsed excimer laser to induce either alloying (PLIA) or crystallization (PLIC) processes. In the first case, the starting material consisted of an amorphous Ge layer electron-evaporated onto poly-Si grown on quartz substrates. Both the Ge mole fraction and the alloyed junction depth can be controlled by varying the laser energy fluence and/or the number of laser pulses. As an example, poly-Si1−xGex layers with x = 0.3 can be easily obtained by this technique. In the second case, thin amorphous Si/Ge layers, prepared by successive evaporations of the two elements onto oxidized Si substrates, were submitted to the XeCl laser irradiation and the resulting films were investigated using the TEM and Raman spectroscopy techniques. They showed that the processed layers (120 nm thick) are polycrystalline with grains as large as 200 nm and an almost equal Si and Ge content.