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The aim of this study was to estimate the incidence of COVID-19 disease in the French national population of dialysis patients, their course of illness and to identify the risk factors associated with mortality. Our study included all patients on dialysis recorded in the French REIN Registry in April 2020. Clinical characteristics at last follow-up and the evolution of COVID-19 illness severity over time were recorded for diagnosed cases (either suspicious clinical symptoms, characteristic signs on the chest scan or a positive reverse transcription polymerase chain reaction) for SARS-CoV-2. A total of 1,621 infected patients were reported on the REIN registry from March 16th, 2020 to May 4th, 2020. Of these, 344 died. The prevalence of COVID-19 patients varied from less than 1% to 10% between regions. The probability of being a case was higher in males, patients with diabetes, those in need of assistance for transfer or treated at a self-care unit. Dialysis at home was associated with a lower probability of being infected as was being a smoker, a former smoker, having an active malignancy, or peripheral vascular disease. Mortality in diagnosed cases (21%) was associated with the same causes as in the general population. Higher age, hypoalbuminemia and the presence of an ischemic heart disease were statistically independently associated with a higher risk of death. Being treated at a selfcare unit was associated with a lower risk. Thus, our study showed a relatively low frequency of COVID-19 among dialysis patients contrary to what might have been assumed.

Apart from producing high bond strength to tooth enamel and dentin, a dental adhesive with biotherapeutic potential is clinically desirable, aiming to further improve tooth restoration longevity. In this laboratory study, an experimental two-step universal adhesive, referred to as Exp_2UA, applicable in both the etch-and-rinse (E&R) and self-etch (SE) modes and combining a primer, containing 10-methacryloyloxydecyldihydrogen phosphate as a functional monomer with chemical binding potential to hydroxyapatite, with a bioglass-containing hydrophobic adhesive resin, was multifactorially investigated. In addition to primary property assessment, including measurement of bond strength, water sorption, solubility, and polymerization efficiency, the resultant adhesive–dentin interface was characterized by transmission electron microscopy (TEM), the filler composition was analyzed by energy-dispersive X-ray spectroscopy, and the bioactive potential of the adhesive was estimated by measuring the long-term ion release and assessing its antienzymatic and antibacterial potential. Four representative commercial adhesives were used as reference/controls. Application in both the E&R and SE modes resulted in a durable bonding performance to dentin, as evidenced by favorable 1 year aged bond strength data and a tight interfacial ultrastructure that, as examined by TEM, remained ultramorphologically unaltered upon 1 year of water storage aging. TEM revealed a 20 μm thick hydrophobic adhesive layer with a homogeneous bioglass filler distribution. Adequate polymerization conversion resulted in extremely low water sorption and solubility. In situ zymography revealed reduced endogenous proteolytic activity, while Streptococcus mutansbiofilm formation was inhibited. In conclusion, the three-/two-step E&R/SE Exp_2UA combines the high bonding potential and bond degradation resistance with long-term ion release, rendering the adhesive antienzymatic and antibacterial potential.

Advanced devices are not only driven by minimum device geometry, performance enhancement, and cost issues, but also require a low power consumption. Device scaling for higher performance and lower power consumption necessitates the introduction of advanced process modules, new materials new device architectures and, finally, even the use of alternative device operation principles compared to the standard MOS transistor. Several of these advanced devices will be discussed in view of their scalability and their potential for coping with the ITRS roadmap. Key performance parameters will be investigated. Since the invention of the integrated circuit by Jack Kilby in 1958, silicon has been the driving semiconductor material. Today, there are many alternative approaches to come to sub‐10 nm high performance technologies. However, even the use of Ge, III‐V or 2D materials will have to be processed on a Si platform. This paper reviews technological developments for group IV semiconductors.

Supplemental digital content is available in the text.

This paper overviews possibilities of heterogeneous material and device integrations base on selective area epitaxial growth. The options applicable at various scale from that of individual devices like FinFETs and Nanowires to wide areas of IIIV-Ge materials are described. Finally, multi-level integration of new 2-D crystals will be discussed as well.

The goal of this work is to study the influence of the germanium concentration in the source region of vertical TFETs for different temperatures. Vertical TFETs with the source region composed by Si(100%), Si0.73Ge0.27, Si0.56Ge0.44 and Ge(100%) were studied in the temperature range from room temperature to 150oC. The main analog parameters like transconductance, output conductance and intrinsic voltage gain were analyzed. With increasing Ge concentration the drive current, the subthreshold swing, the transconductance and the intrinsic voltage gain improves while the output conductance and 1/f noise degrades. The temperature increase impacts negatively the output conductance and the intrinsic voltage gain, in spite of improving the transconductance due to the higher band-to-band tunneling caused by the source bandgap lowering.

Device scaling for higher performance and lower power consumption requires the introduction of advanced process modules, new materials new device architectures and finally even the use of alternative device operation principles compared to the standard MOS transistor. Several of these advanced devices will be discussed in view of their scalability and their potential for coping with the ITRS roadmap. Key performance parameters will be investigated.

The aim of this work is to compare the suitability of Tunnel-FET and FinFET devices in a basic circuit such as a current mirror. Their performances have been compared in terms of susceptibility to variations in the output transistor dimensions, in bias conditions and in temperature. At first, experimental results showed that both TFETs and FinFETs presented a similar channel width dependence, but the former was much less affected by channel length variations. The output bias condition has been studied as well. Then, simulations expanded the analyses for the temperature impact, showing that the different dominant transport mechanism in each case resulted in opposite trends and susceptibility to the temperature. Therefore, it was observed that TFETs presented better results than FinFETs as components of the highlighted circuit, since the use of TFETs enabled it to mirror the input current even in the case of dimension mismatch and temperature variation.

In this work, the impact of the nanowire TFET diameter on analog parameters in "weak" and "strong inversion" conditions is analyzed. Its relation with the current conduction mechanism is also studied. A comparison of the analog performance among TFETs doped with different source doping profile (abrupt and non-abrupt) and MOSFETs was experimentally realized for larger diameter nanowires. Additionally the TFET evaluation was extrapolated for smaller diameters by numerical simulation. The transistor efficiency and the Early voltage were considered in order to calculate the intrinsic voltage gain (AV). Both effects influence AV degradation for TFETs with smaller diameters biased in "weak inversion". While larger TFET nanowires show better AV than MOSFETs under "strong inversion" bias, narrower nanowires present potentialities for low power and low voltage applications, since their AV is better than the corresponding values for larger diameters TFET nanowires under "weak inversion" bias.

This work studies the hysteresis behaviour in vertical Ge-source gate all-around tunnel field-effect transistors (TFETs) at low temperature. Two devices with different HfO2 thickness in the gate stack (2nm and 3nm) are compared. The goal is to investigate the impact of oxide trapping on the trap-assisted tunneling. It is shown that there is only a minor effect - the main impact of gate oxide trapping is the shift in the onset voltage of the TFET, through a charge-trapping-induced shift in the flat-band voltage.

This work studies the impact of the germanium content in the source on analog parameters of vertical nanowire Tunnel-FETs (NW-TFETs) operating in a temperature range from room temperature to 150oC. Although, the higher the germanium amount in the source the higher the on-state current, with respect to the analog applications the NW-TFETs performance depends mainly on the predominant conduction mechanism. At room temperature, TFETs for which BTBT is the predominant transport mechanism, present better analog performance, while at high temperature the device that is more trap-assisted-tunneling dependent presents the best performance due to its higher immunity to the drain electric field.

In this work, the analog performance of Tunnel FET and FinFET, which have a different principle of operation, is evaluated based on a comparison between them. This comparison is performed through the drain current behavior, the transconductance, the output conductance and the intrinsic voltage gain. Although the TFET devices present a smaller transconductance than the FinFET ones, the output behavior is strongly improved and results in a better performance of TFET devices when the focus is the intrinsic voltage gain.

Recruitment and retention of leukocytes at a site of blood vessel growth are crucial for proper angiogenesis and subsequent tissue perfusion. Although critical for many aspects of regenerative medicine, the mechanisms of leukocyte recruitment to and actions at sites of angiogenesis are not fully understood. In this study, we investigated the signals attracting leukocytes to avascular transplanted pancreatic islets and leukocyte actions at the engraftment site. Expression of the angiogenic stimulus VEGF-A by mouse pancreatic islets was elevated shortly after syngeneic transplantation to muscle. High levels of leukocytes, predominantly CD11b+/Gr-1+/CXCR4hi neutrophils, were observed at the site of engraftment, whereas VEGF-A–deficient islets recruited only half of the amount of leukocytes when transplanted. Acute VEGF-A exposure of muscle increased leukocyte extravasation but not the levels of SDF-1α. VEGF-A–recruited neutrophils expressed 10 times higher amounts of MMP-9 than neutrophils recruited to an inflammatory stimulus. Revascularization of islets transplanted to MMP-9–deficient mice was impaired because blood vessels initially failed to penetrate grafts, and after 2 weeks vascularity was still disturbed. This study demonstrates that VEGF-A recruits a proangiogenic circulating subset of CD11b+/Gr-1+ neutrophils that are CXCR4hi and deliver large amounts of the effector protein MMP-9, required for islet revascularization and functional integration after transplantation.

This paper gives an overview of the different trends and challenges of fully Si-based and hetero-junction tunnel field effect transistors (TFETs). The different horizontal and vertical approaches are discussed in view of processing aspects and device performance. A benchmarking is given of the state-of-the-art experimental data reported in the literature, enabling to highlight the potentials of these emerging devices.

Tunnel-FETs (TFETs) have the potential for a sub-60 mV/dec subthreshold swing and therefore allow for scaling the supply voltage beyond the 1 V plateau of metal-oxide-semiconductor FETs (MOSFETs). The latter scaling is a necessary condition for a reduction of the power consumption per transistor. Silicon-based TFETs are the most attractive because they allow for a full re-use of the existing expertise in fabricating silicon MOSFETs. However, the large bandgap of silicon results in low on-currents. Therefore, the incorporation of heterostructures is proposed. In particular, a germanium-source silicon-channel n-TFET and, as complementary p-TFET, an indium(gallium)arsenide-source silicon-channel TFET reach on-currents comparable to MOSFETs. To beat the MOSFET performance and allow ultra-low voltage operation, additional performance boosters are required. We analyze the impact of the device configuration and of heterostructure strain. The former is illustrated with experimental data of all-silicon FinFET-based TFETs.

This paper discusses the electrical characterization of complementary multiple-gate tunneling field effect transistors (MuGTFETs), implemented in a MuGFET technology compatible with standard complementary metal oxide semiconductor (CMOS) processing, emphasizing the dependence of the tunneling current on the fin-width. A linear dependence of the tunneling current for narrow fins with the square root of the fin width is experimentally reported for the first time. The comparison between narrow fins and planar-like fins offers additional insights about the fin-width dependence. The output characteristic shows a perfect saturation, very attractive for analog circuits. The temperature dependence is measured indicating a weak dependence as expected for tunneling devices. Measured devices with a point slope of 46 mV/dec at low biases and an $I_{\text{on}}/I_{\text{off}}$ ratio of $10^{6}$ at a supply voltage of 1.2 V for 25 nm wide fins are reported as best performing devices with a MuGFET technology using a high-$k$ dielectric and a metal gate inserted gate stack.

Tunnel-FETs (TFETs) have the potential for a subthreshold swing below 60 mV/dec such that supply voltage scaling beyond the 1 V plateau of metal-oxide-semiconductor FETs (MOSFETs) is possible. The latter scaling is a necessary condition for a reduction of the power consumption per transistor. Silicon-based TFETs are the most attractive because they allow for a full re-use of the existing expertise in fabricating silicon MOSFETs. However, the large bandgap of silicon results in low on-currents. Therefore, the incorporation of heterostructures is proposed. In particular, a germanium-source silicon-channel n-TFET and, as complementary p-TFET, an indium(gallium)arsenide-source silicon-channel TFET reach on-currents comparable to MOSFETs. TFETs offer new opportunities, like the short-gate configuration, due to their different operating principle. At the same time, the latter implies that models need to be newly developed. The agreement of models with experimental data is still qualitative only.

Two rich premixed ethylene/oxygen/argon and ethylene/dimethoxymethane/oxygen/argon flat flames burning at 50 mbar were investigated experimentally by using molecular beam mass spectrometry to study the effect of methylal (dimethoxymethane) addition on species concentration profiles (C. Renard, P.J. Van Tiggelen and J. Vandooren, Proc. Combust. Inst., 29(2002) 1277–1284). The replacement of 5.7% C2H4by 4.3% C3H8O2, keeping the equivalence ratio equal to 2.50, is responsible for a decrease of the maximum mole fractions of most of the detected intermediate species. If this phenomenon is barely noticeable for C2to C4intermediates, it becomes more efficient for C5to C10species. Previously, a reaction mechanism has been validated against a premixed rich C2H4/O2/Ar flame (φ = 2.50) which describes in detail the formation of soot precursors and more precisely the main pathways involving benzene (V. Dias, C. Renard, P.J. Van Tiggelen and J. Vandooren, European Combustion Meeting, Orléans, France, p.221, 2003).The aim of this work is to extend this original model by building a sub-mechanism taking into account the formation and the consumption of oxygenated species involved in dimethoxymethane combustion. The new mechanism contains 474 elementary reactions and involves 90 chemical species in order to simulate both ethylene flames with and without methylal addition. The model leads to a good simulation for all species detected in these flames, and underlines the effect of methylal addition on species concentration profiles.According to this mechanism, the two main degradation pathways of methylal (CH3OCH2OCH3) in C2H4/methylal/oxygen/argon flame are:

The Library of the Université Libre de Bruxelles and Editions de l'Université de Bruxelles (EUB), the University's publishing imprint, have recently agreed to collaborate to provide free online access to recent out-of-print books published by EUB. The e-books are available on the Digithèque website, a collection of digital copies of printed books created by the Library. This initiative is valuable for the scientific community and the general public who can freely access the books online, for the authors whose books have been digitized and widely disseminated, and for the publisher whose collections become more visible on the Internet, thereby generating more traffic on its website and potentially increasing sales of its other books. Around 20 books have been made available online so far. This article describes the context of the agreement, how the collaboration operates, the options of file conversion vs. book scanning, issues relating to copyright and users' rights, how access is provided to the digital copies, and future collaborative projects of the Library and EUB.

BK virus interstitial nephritis (BKVIN) is a serious complication after kidney grafting, necessitating drastic reduction of immunosuppressive therapy in order to enable viral clearance. Despite these measures, progressive graft dysfunction and graft loss occur in the majority of recipients.We diagnosed BKVIN in 21 recipients grafted between 1998 and 2004. Eight of 21 patients were treated with weekly, adjuvant low-dose cidofovir in addition to reduction of immunosuppressive therapy.BKVIN caused irreversible deterioration of graft function in all patients but renal function stabilized after antiviral treatment (creatinine clearance: 51.8–32 mL/min; p = 0.001) and no graft loss occurred in cidofovir-treated recipients during 24.8 (8–41) months follow-up. Peak serum cidofovir concentrations were dose-dependent and attained approximately one-tenth of thein vitroEC50 for cidofovir against BK-virus, while pre-treatment with probenecid did not alter peak serum concentrations nor affected the incidence of nephrotoxicity. In fact, no cidofovir-related renal toxicity occurred; few patients had minor transient side effects (nausea, skin rash). In contrast, 9 of 13 patient who received no adjuvant cidofovir therapy lost their graft after median 8 (4–40) months.In this selected group of recipients with BKVIN, the use of adjuvant low-dose cidofovir therapy resulted in prolonged graft survival and stabilized graft function.

Structures of premixed ethylene/oxygen/argon-rich flat flames burning at 50 mbar have been established by using molecular beam mass spectrometry to investigate the effect of methylal (dimethoxymethane) addition on species concentration profiles. The aim of this experimental study is to examine eventual changes of the concentration profiles of detected hydrocarbon intermediates which could be considered as soot precursors (C"2H"2, C"4H"2, C"5H"4, C"5H"8, C"6H"8, C"6H"4, C"6H"6, C"6H"8, C"7H"8, C"6H"6O, C"8H"6, C"8H"8, C"9H"8, and C"1"0H"8). The comparative study has been achieved on three flames with equivalence ratios (@f) of 2.25 and 2.50: two without any additive (F2.25 and F2.50) and one with 4.3% methylal in partial replacement of C"2H"4 (F2.50M). The three flat flames have similar final flame temperatures (@?1800 K). An increase of the flame equivalence ratio (@f) from 2.25 to 2.50 leads to an increase of maximum mole fractions of most hydrocarbon intermediates, much larger than the initial fuel content difference. Methylal addition to the fresh gas inlet causes a slight shift downstream of the flame front. The replacement of 5.7% C"2H"4 by 4.3% C"3H"8O"2, keeping the equivalence ratio equal to 2.50, is responsible for a decrease of the maximum mole fractions of most of the detected intermediate species. If this phenomenon is barely noticeable for C"2 to C"4 intermediates, it becomes more efficient for C"5 to C"1"0 species. Although the equivalence ratio is quite different in flames F2.25 and F2.50M, most of the maximum mole fractions of C"2 to C"1"0 intermediates are very similar but lower than those in the F2.50 flame. It seems to indicate that similar initial C/O ratio (F2.25, 0.75: F2.50M, 0.76) in the fresh gases mixtures better encapsulates the influence on maximum concentrations of hydrocarbon intermediates and soot precursors in rich flames.

Using molecular beam sampling coupled with mass spectrometric analysis, the detailed mechanisms of lean methanol flames burning at 40 Torr have been investigated. About 70% of the fuel molecules are consumed by reaction with hydroxyl radical and 30% by reaction with hydrogen atom. The main product is CH2OH (or CH3O radical). This conclusion is reinforced by the low value of chemi-ionization observed for these systems. The CH2OH radicals react further, principally with the molecular oxygen. According to the proposed mechanism, one molecule of formaldehyde is produced per molecule of methanol consumed. The occurrence of electronically excited CH2O (Emeleus cool flame bands) has been detected and attributed to highly exothermic reactions between CH2OH and O, H, or OH radicals. The formaldehyde reacts either in a reaction with radicals, mainly OH, or disappears in a bimolecular decomposition process which is responsible for the necessary increase of the number of species in the flame front. The rate constants in cm3/mole.s derived for the following elementary steps: CH3OH+H→CH2OH+H2k1=3.4 1013exp(−2600/RT) CH3OH+OH→CH2OH+H2O k2=4.8 1013exp(−4500/RT) CH2OH+O2→H2CO+HO2k19=1 1014exp(−5000/RT) CH2O+M→H2+CO+M k9=2.5 1014exp(−29000/RT).

Cationic polymerization of 1H,1H,2H,2H perfluorooctyl vinyl ether (CH2=CH-O-C2H4-C6F13), initiated by the HI/ZnI2 system in 1,1,2 trichloro trifluoro ethane at-30°C, leads to living polyvinyl ethers bearing a fluoroalkyl group. Results indicate that the polymerization is indeed free from chain transfer and termination reactions and that polyethers of controlled molecular weight and a narrow molecular weight distribution can be made available.

The structure of two premixed stoichiometric CO/H2/O2/Ar flat flames, one uninhibited and the other inhibited by 3% of CF3H, has been established at 4,65 kPa by using a mass spectrometric analyzer coupled with molecular beam sampling. The initial content of H2was 2% and the H/F initial ratio was 0.78. The main effect of the CF3H addition concerns essentially the smaller CO conversion and the formation of lower quantities of H2O, OH and H species. The production of HF and CF2O predominates over the formation of other hydrogen compounds, such as H, OH and H2O; HF and CF2O remain in the burnt gases.

Living polystyryllithium anions and living polyethyl vinyl ether cations have been successfully coupled. Indeed, no residue of any of the two original homopolymers is observed in the final product, when they are used in a stoichiometric amount. This method has been exploited in order to synthesize AB and ABA polyethyl vinyl ether (PEVE) (A)/polystyrene (PSt) (B) block copolymers with a high efficiency.

The aim of this work has been the establishment of a combustion mechanism of CF3H and CF2HCl inH2/O2/Ar flames. The structures of a lean flame seeded with 3% of CF3H and of two stoichiometric flames seeded respectively with 3% CF3H or 1% CF2HCl have been investigated at low pressure (4.6 kPa) by using the molecular beam-sampling technique coupled with a mass spectrometer (MBMS). The data reduction of the experimental results has allowed development of a decay mechanism for CF3H and CF2HCl in flames. Those mechanisms have been applied to model the investigated flames by means of the PREMIX code using the experimental temperature profiles. The comparison of computed mole fraction profiles with experimental ones allows estimation of some rate coefficients not available in the literature. A good agreement between experimental and computed profiles is observed. From the burning velocities of CO/H2/O2/Ar flames seeded with variable quantities of CF3H or CF2HCl, the small inhibition efficiency of CF2HCl has been established. It is related to the elementary process CF2H+O→CF2O+H.

The goal of this work is to study the influence of the germanium concentration in the source region of vertical TFETs for different temperatures. Vertical TFETs with the source region composed by Si(100%), Si0.73Ge0.27, Si0.56Ge0.44 and Ge(100%) were studied in the temperature range from room temperature to 150oC. The main analog parameters like transconductance, output conductance and intrinsic voltage gain were analyzed. With increasing Ge concentration the drive current, the subthreshold swing, the transconductance and the intrinsic voltage gain improves while the output conductance and 1/f noise degrades. The temperature increase impacts negatively the output conductance and the intrinsic voltage gain, in spite of improving the transconductance due to the higher band-to-band tunneling caused by the source bandgap lowering.

In this work, the impact of the nanowire TFET diameter on analog parameters in “weak” and “strong inversion” conditions is analyzed. Its relation with the current conduction mechanism is also studied. A comparison of the analog performance among TFETs doped with different source doping profile (abrupt and non-abrupt) and MOSFETs was experimentally realized for larger diameter nanowires. Additionally the TFET evaluation was extrapolated for smaller diameters by numerical simulation. The transistor efficiency and the Early voltage were considered in order to calculate the intrinsic voltage gain (AV). Both effects influence AVdegradation for TFETs with smaller diameters biased in “weak inversion”. While larger TFET nanowires show better AV than MOSFETs under “strong inversion” bias, narrower nanowires present potentialities for low power and low voltage applications, since their AVis better than the corresponding values for larger diameters TFET nanowires under “weak inversion” bias.

The aim of this work is to compare the suitability of Tunnel-FET and FinFET devices in a basic circuit such as a current mirror. Their performances have been compared in terms of susceptibility to variations in the output transistor dimensions, in bias conditions and in temperature. At first, experimental results showed that both TFETs and FinFETs presented a similar channel width dependence, but the former was much less affected by channel length variations. The output bias condition has been studied as well. Then, simulations expanded the analyses for the temperature impact, showing that the different dominant transport mechanism in each case resulted in opposite trends and susceptibility to the temperature. Therefore, it was observed that TFETs presented better results than FinFETs as components of the highlighted circuit, since the use of TFETs enabled it to mirror the input current even in the case of dimension mismatch and temperature variation.

This work studies the hysteresis behaviour in vertical Ge-source gate all-around tunnel field-effect transistors (TFETs) at low temperature. Two devices with different HfO2thickness in the gate stack (2nm and 3nm) are compared. The goal is to investigate the impact of oxide trapping on the trap-assisted tunneling. It is shown that there is only a minor effect – the main impact of gate oxide trapping is the shift in the onset voltage of the TFET, through a charge-trapping-induced shift in the flat-band voltage.

This work studies the impact of the germanium content in the source on analog parameters of vertical nanowire Tunnel-FETs (NW-TFETs) operating in a temperature range from room temperature to 150ºC. Although, the higher the germanium amount in the source the higher the on-state current, with respect to the analog applications the NW-TFETs performance depends mainly on the predominant conduction mechanism. At room temperature, TFETs for which BTBT is the predominant transport mechanism, present better analog performance, while at high temperature the device that is more trap-assisted-tunneling dependent presents the best performance due to its higher immunity to the drain electric field.

In this work, the analog performance of Tunnel FET and FinFET, which have a different principle of operation, is evaluated based on a comparison between them. This comparison is performed through the drain current behavior, the transconductance, the output conductance and the intrinsic voltage gain. Although the TFET devices present a smaller transconductance than the FinFET ones, the output behavior is strongly improved and results in a better performance of TFET devices when the focus is the intrinsic voltage gain.

In this paper, we present for the first time a novel Si p-tunnel field effect transistor (pTFET) with high-$k$ dielectric and metal gate fabricated in a multiple gate technology. The device exhibits an on-state current of 7 μA/μm at $V_{\text{DD}}$ of 0.9 V and a high $I_{\text{ON}}/I_{\text{OFF}}$ ratio of ${\sim}10^{6}$ with a fin width of 10 nm. The high on-current is believed to be due to an enhanced electric field caused by silicide encroachment and dopant segregation. Low variability of the device performance is reported for the different fin widths. Temperature measurements also show that the current is due to different transport mechanisms at different gate biases. Temperature measurements and TCAD simulations both confirm the presence of trap-assisted tunneling (TAT) as main responsible for the degradation of the subthreshold swing.