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23 results on '"Wang, Tongqing"'

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1. All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process

2. Metal Thickness Measurement System Based on a Double-Coil Eddy-Current Method With Characteristic Ratio Detection

3. Synthesis of CeO2Nanoparticles Derived by Urea Condensation for Chemical Mechanical Polishing

4. Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

5. Role of the Adhesion Force during Copper Chemical Mechanical Planarization

6. Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN as Barrier/Liner Layer

7. The Role of Diethanolamine on Chemical Mechanical Polishing in Alkaline Glycine-Based Slurries for Cobalt Interconnects

8. Galvanic Corrosion Inhibitors for Cu/Ru Couple during Chemical Mechanical Polishing of Ru

9. Mechanism Analysis of Megasonic and Brush Cleaning Processes for Silicon Substrate after Chemical Mechanical Polishing

10. Mechanism of GaN CMP Based on H2O2 Slurry Combined with UV Light

11. Contact stress non-uniformity of wafer surface for multi-zone chemical mechanical polishing process

12. Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

13. Image Dimensionality Reduction Based on the Intrinsic Dimension and Parallel Genetic Algorithm

14. Effects of various suspended mounting schemes on mode characteristics of coupled slotlines considering conductor thickness for wideband MIC applications

15. An efficient approach to modeling of quasiplanar structures using the formulation of power conservation in spectral domain

16. Spectral-domain analysis of radiating cylindrical dielectric resonator for wireless communications [WLANs]

18. Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN as Barrier/Liner Layer

19. Role of the Adhesion Force during Copper Chemical Mechanical Planarization

20. Galvanic Corrosion Inhibitors for Cu/Ru Couple during Chemical Mechanical Polishing of Ru

21. Mechanism of GaN CMP Based on H2O2Slurry Combined with UV Light

22. Accurate closed form expressions for characteristic impedance of coupled line with sliced coaxial cable

23. Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

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