1. Reducing Dark-State Current for GaAs Photoconductive Semiconductor Switch by Ultrafine Grinding Process
- Author
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Yang, Yingxiang, Hu, Long, Yang, Xianghong, Huang, Jia, Liu, Jingliang, Yang, Mingchao, Li, Xin, Liu, Weihua, and Geng, Li
- Abstract
With unique characteristics, especially the simultaneous combination of high-power capacity and high repetition frequency, gallium arsenide photoconductive semiconductor switches (GaAs PCSS) have a wide range of applications in the field of pulsed power technology. In view of the ever-shrinking device area and the ever-increasing operating voltage of GaAs PCSS, its sidewall morphology has become more and more obvious on the lifetime and reliability of the device. To address this issue, this article comparatively investigates the influence of GaAs PCSS sidewall morphology on the electrical characteristics of the devices. The results show that the grinding process is favorable to improve the quality of the device sidewalls, so as to achieve the purpose of improving the life and reliability of the device. The leakage current of grinded-GaAs PCSS (G-GaAs PCSS) is reduced to
$11.43~\mu \text{A}$ ${I}_{\text {light}}/{I}_{\text {dark}}$ $1.45\times 10^{{7}}{)}$ - Published
- 2024
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