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Perovskite solar cells (PSCs) are transforming the renewable energy sector with their remarkable efficiencies and economical large-scale manufacturing. Perovskite materials have earned significant attention for their unique properties, including high light absorption, efficient charge transport, and ease of fabrication. These unique features of perovskite materials are essential for developing high-efficiency PSCs, which are considered leading candidates for sustainable energy solutions. This review comprehensively analyzes high-efficiency PSCs, focusing on their critical aspects such as perovskite material properties, device configurations, fabrication techniques, and the latest advancements. Our review addresses vital factors such as stability concerns, environmental impact, production scalability, device reproducibility, and challenges related to perovskite degradation that are pertinent to the advancement of PSC technology. Additionally, we discuss emerging trends in tandem and multijunction devices, flexible and wearable applications, and the integration of PSCs into building-integrated photovoltaic systems. Furthermore, we examine limitations, challenges, and future prospects for PSCs, including developing improved stability protocols, enhancing efficiency, and integrating energy storage solutions to drive advancements in PSC manufacturing. Lastly, we provide insights into the commercialization pathway for inverted PSCs, underscoring the importance of stability, cost reduction, and efficiency enhancement in achieving widespread adoption of this promising technology.

Non-volatile memory devices, which offer large capacity and mechanical dependability as a mainstream technology, have played a key role in fostering innovation in modern electronics. Despite the advantages of non-volatile memory devices, their low ON/OFF ratio and slow operational speed have limited their performance compared to their volatile counterparts. In this study, we present a non-volatile floating-gate memory device based on van der Waals heterostructures, which exhibits ultrahigh-speed memory operations in the range of a hundred nanoseconds with an extinction ratio of up to 106. The device consists of atomically sharp interfaces between different functional elements, including atomically thin sheet of multilayer Graphene (MGr) as a floating gate, hexagonal boron nitride (h-BN) as a tunnel barrier, and two-dimensional (2D) semiconductor tin di-selenide (SnSe2) as a channel material. The memory device exhibits excellent endurance performance with stable and dependable behavior across numerous program/erase cycles, comparable to commercial volatile dynamic random access memory technology. In addition, we demonstrate the ability of the device to store multiple bits per memory cell, which offers promising potential for ultrahigh-density information storage. Our findings provide important implications for memory storage, data processing, and electronic device development, and offer new opportunities in the field of emerging 2D materials with optimal device engineering.