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Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. [ABSTRACT FROM AUTHOR]

Dynamic average-value models (AVMs) for AC-DC rectifier circuits are generally formulated in state-space form and hence are straightforward to implement in state-variable-based simulation languages. In the nodal analysis-based approach used in electromagnetic transient (EMTP-type) simulation packages, the development of AVMs requires additional effort to reformulate and interface the models with the external ac and dc networks. This paper proposes a new averaged-circuit model for three-phase line-commutated rectifiers which is directly interfaced with the ac and dc networks, thereby achieving a simultaneous solution of the respective variables in EMTP-type solution. The proposed model is verified against conventionally interfaced model, as well as detailed switching model of the original rectifier circuit. A significant improvement of numerical accuracy and stability of the solution is demonstrated even at fairly large time steps. [ABSTRACT FROM AUTHOR]

This paper proposes a small-signal model for variable-switching-frequency hysteretic converters operating in continuous conduction mode (CCM) and discontinuous conduction mode (DCM). The model is capable of predicting flip-bifurcation phenomena when the hysteretic converter operates below the CCM/DCM boundary. By developing a discrete-time state-space model of the converter, the z-domain model is derived using the advanced z-transform. Such a tool is suitable to transform in the z-domain signals varying within a switching cycle. A comparison with exact simulations is provided to validate the proposed model. The propagation delay of the feedback control circuit is included due to its significant influence on the low-frequency open-loop gain. Experimental results run on a test chip including a 10-MHz TSMC 0.18\ \mu\m-process hysteretic-mode buck converter are also reported along with the model results. [ABSTRACT FROM PUBLISHER]