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We present measurements of interfacial Gilbert damping due to the spin pumping effect in Ni$_{81}$Fe$_{19}$/W heterostructures. Measurements were compared for heterostructures in which the crystallographic phase of W, either $\alpha$(bcc)-W or $\beta$(A15)-W, was enriched through deposition conditions and characterized using X-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM). Single phase Ni$_{81}$Fe$_{19}$/$\alpha$-W heterostructures could be realized, but heterostructures with $\beta$-W were realized as mixed $\alpha$-$\beta$ phase. The spin mixing conductances (SMC) for W at interfaces with Ni$_{81}$Fe$_{19}$ were found to be significantly lower than those for similarly heavy metals such as Pd and Pt, but comparable to those for Ta, and independent of enrichment in the $\beta$ phase.

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.