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Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG., Comment: 4 figures

Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moir\'e period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physics of MATBG. Here, we combine nanospot angle-resolved photoemission spectroscopy and atomic force microscopy to resolve the fine electronic structure of the flat band and remote bands, and their evolution with twist angles from 1.07$^\circ$ to 2.60$^\circ$. Near the magic angle, dispersion is characterized by a flat band near the Fermi energy with a strongly reduced bandwidth. Moreover, near 1.07$^\circ$, we observe a spectral weight transfer between remote bands at higher binding energy and extract the modulated interlayer spacing near the magic angle. Our work provides direct spectroscopic information on flat band physics and highlights the role of lattice relaxations., Comment: 22 pages, 5 figures, Nature Materials, in press

We present Raman spectroscopy of the polycrystalline Si and Ge films deposited by molecular beam deposition on a dielectric substrate. The Raman study has been made using lasers with different wavelengths. Structural properties of the poly-films have been studied by XRD and TEM. The Raman spectra are characterized by appearance of the additional wide peaks around 500 cm$^{-1}$ and 290 cm$^{-1}$ in the main vibrational bands of TO(c-Si) and TO(c-Ge) phonons, respectively. It is shown that these peaks correspond to scattering in grain boundary area. For the poly-Si films, both a downward shift and an asymmetrical broadening of the vibrational band of TO(c-Si) near 520 cm$^{-1}$ are observed, whereas there is only a symmetric broadening in the spectra of poly-Ge. The Raman line shape has been modeled within the framework of the phonon confinement theory taking into account the sizes of coherent scattering domains obtained using XRD. The model includes a symmetrical band broadening observed in polycrystalline films. It is shown that confinement of phonon propagation might be in the poly-Si films. The phonon dispersion and the density of phonon states have been simulated using density functional theory. It has been found that phonon confinement relates to grain boundaries rather than other extended defects such as twins (multiple twins, twin boundaries), the appearance of which does not lead to significant changes in phonon dispersion and density of phonon states., Comment: 46 pages, 23 figures, 1 table

The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects that they may host. However, the practical challenge of realizing these structures on a scale large enough for spectroscopic investigation, remains a significant hurdle, resulting in a scarcity of direct measurements of the electronic band structure of twisted transition metal dichalcogenide bilayers. Here we present a systematic nanoscale angle-resolved photoemission spectroscopy investigation of bulk, single layer, and twisted bilayer WS2 with a small twist angle of 4.4{\deg}. The experimental results are compared with theoretical calculations based on density functional theory along the high-symmetry directions {\Gamma}-K and {\Gamma}-M. Surprisingly, the electronic band structure measurements suggest a structural relaxation occurring at 4.4{\deg} twist angle, and formation of large, untwisted bilayer regions., Comment: 23 pages, 11 figures

Given the escalating risks of malicious attacks in the finance sector and the consequential severe damage, a thorough understanding of adversarial strategies and robust defense mechanisms for machine learning models is critical. The threat becomes even more severe with the increased adoption in banks more accurate, but potentially fragile neural networks. We aim to investigate the current state and dynamics of adversarial attacks and defenses for neural network models that use sequential financial data as the input. To achieve this goal, we have designed a competition that allows realistic and detailed investigation of problems in modern financial transaction data. The participants compete directly against each other, so possible attacks and defenses are examined in close-to-real-life conditions. Our main contributions are the analysis of the competition dynamics that answers the questions on how important it is to conceal a model from malicious users, how long does it take to break it, and what techniques one should use to make it more robust, and introduction additional way to attack models or increase their robustness. Our analysis continues with a meta-study on the used approaches with their power, numerical experiments, and accompanied ablations studies. We show that the developed attacks and defenses outperform existing alternatives from the literature while being practical in terms of execution, proving the validity of the competition as a tool for uncovering vulnerabilities of machine learning models and mitigating them in various domains.

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into negative trions, which recombine predominantly non-radiatively at room temperature. As a result, the photoluminescence (PL) intensity is quenched. Here we study the optical and electronic properties of a MoS2/WSe2 heterostructure as a function of chemical doping by Cs atoms performed under ultra-high vacuum conditions. By PL measurements we identify two interlayer excitons and assign them to the momentum-indirect Q-Gamma and K-Gamma transitions. The energies of these excitons are in a very good agreement with ab initio calculations. We find that the Q-Gamma interlayer exciton is robust to the electron doping and is present at room temperature even at a high charge carrier concentration. Submicrometer angle-resolved photoemission spectroscopy (micro-ARPES) reveals charge transfer from deposited Cs adatoms to both the upper MoS2 and the lower WSe2 monolayer without changing the band alignment. This leads to a small (10 meV) energy shift of interlayer excitons. Robustness of the momentum-indirect interlayer exciton to charge doping opens up an opportunity of using TMD heterostructures in light-emitting devices that can work at room temperature at high densities of charge carriers.

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potential applications in, e.g., neuromorphic computing. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-driven conductive phase arises with only a minor reorganisation of the Mott state. This can be explained by the co-existence of structurally different domains that emerge during the IMT. Electronic structure calculations show that the boundaries between domains of slightly different structure lead to a drastic reduction of the overall gap. This permits an increased conductivity, despite the persistent presence of the Mott state. This mechanism represents a paradigm shift in the understanding of IMTs, because it does not rely on the simultaneous presence of a metallic and an insulating phase, but rather on the combined effect of structurally inhomogeneous Mott phases., Comment: 12 pages, 14 figures

Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, most likely due to their photochemical sensitivity. Here, we provide micron-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS$_3$ above and below the N\'{e}el temperature down to one monolayer. The favorable comparison with density functional theory calculations enables to identify the orbital character of the observed bands. Consistently, we find pronounced changes across the N\'{e}el temperature for bands that consist of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films demonstrating the predominant 2D character of MnPS$_3$. The novel access is transferable to other MPX$_3$ materials (M: transition metal, P: phosphorus, X: chalcogenide) providing a multitude of antiferromagnetic arrangements., Comment: 26 pages, 17 figures

The recent observation of correlated phases in transition metal dichalcogenide moir\'e systems at integer and fractional filling promises new insight into metal-insulator transitions and the unusual states of matter that can emerge near such transitions. Here, we combine real- and momentum-space mapping techniques to study moir\'e superlattice effects in 57.4$^{\circ}$ twisted WSe$_2$ (tWSe$_2$). Our data reveal a split-off flat band that derives from the monolayer $\Gamma$ states. Using advanced data analysis, we directly quantify the moir\'e potential from our data. We further demonstrate that the global valence band maximum in tWSe$_2$ is close in energy to this flat band but derives from the monolayer K-states which show weaker superlattice effects. These results constrain theoretical models and open the perspective that $\Gamma$-valley flat bands might be involved in the correlated physics of twisted WSe$_2$.

Moir\'e superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moir\'e pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moir\'e patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moir\'e patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moir\'e systems and the realization of precise strain-engineered devices.

Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moir\'e bands with specific charge distributions in moir\'e superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution ({\mu}-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1{\deg} twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moir\'e bands were observed only at {\Gamma}-valley but not K-valley in {\mu}-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moir\'e length scale associated with the {\Gamma}-valley moir\'e bands. These results not only reveal the unsual valley dependent moir\'e-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the {\Gamma}-valley moir\'e bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales., Comment: 29 pages, accepted by PRX

Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the intensity of the N$-$H and Si$-$N absorption bands have been observed in the IR absorbance spectra as a result of the deposition of the silicon and germanium films. The thicker was the deposited film, the more considerable were the decrease of N$-$H absorption band intensity and the increase in that of the Si$-$N band. This tendency has been observed during the growth of both amorphous and polycrystalline Si or Ge films. The reduction of IR absorption at the band assigned to the N$-$H bond vibration is explained by breaking of these bonds followed by the diffusion of the hydrogen atoms from the Si$_3$N$_4$ layer into the growing film of silicon or germanium. The effect of the deposited film thickness on the diffusion of hydrogen is discussed within a model of the diffusion of hydrogen atoms controlled by the difference in chemical potentials of hydrogen atoms in the dielectric Si$_3$N$_4$ layer and the growing silicon or germanium film. Hydrogen atoms escape from the Si$_3$N$_4$ layer only during the deposition of a Si or Ge film when its thickness gradually grows. The interruption of the film growth stops the migration of hydrogen atoms into the film because of the decline in the chemical potential difference., Comment: 45 pages, 17 figures

The latest results on the search for collective phenomena in pp interactions at the U-70 accelerator at IHEP (Protvino) are presented. This the long-term experiment has been carried out at the SVD-2 setup. We received the evidence of the pion (Bose-Einstein) condensate formation. Two noticeable peaks in the angular distribution of charged pions are interpreted as Cherenkov radiation of gluons by quarks. The leading effect disappears and the secondary system becomes isotropic in all directions at high multiplicity region., Comment: 4 pages, 5 figures, to be submitted to SciPost Physics Proceedings, ISMD2021

Dirac semimetals (DSMs) are classified into different phases based on the types of the Dirac fermions. Tuning the transition among different types of the Dirac fermions in one system remains challenging. Recently, KMgBi was predicted to be located at a critical state that various types of Dirac fermions can be induced owing to the existence of a flat band. Here, we carried out systematic studies on the electronic structure of KMgBi single crystal by combining angle-resolve photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS). The flat band was clearly observed near the Fermi level. We also revealed a small bandgap of ~ 20 meV between the flat band and the conduction band. These results demonstrate the critical state of KMgBi that transitions among various types of Dirac fermions can be tuned in one system., Comment: 15 pages, 4 figures

Topological Weyl semimetals (TWSs) are exotic crystals possessing emergent relativistic Weyl fermions connected by unique surface Fermi-arcs (SFAs) in their electronic structures. To realize the TWS state, certain symmetry (such as the inversion or time reversal symmetry) must be broken, leading to a topological phase transition (TPT). Despite the great importance in understanding the formation of TWSs and their unusual properties, direct observation of such a TPT has been challenging. Here, using a recently discovered magnetic TWS Co3Sn2S2, we were able to systematically study its TPT with detailed temperature dependence of the electronic structures by angle-resolved photoemission spectroscopy. The TPT with drastic band structures evolution was clearly observed across the Curie temperature (TC = 177 K), including the disappearance of the characteristic SFAs and the recombination of the spin-split bands that leads to the annihilation of Weyl points with opposite chirality. These results not only reveal important insights on the interplay between the magnetism and band topology in TWSs, but also provide a new method to control their exotic physical properties., Comment: 15 pages, 4 figures

The spin-orbit coupling (SOC) lifts the band degeneracy that plays a vital role in the search for different topological states, such as topological insulators (TIs) and topological semimetals (TSMs). In TSMs, the SOC can partially gap a degenerate nodal line, leading to the formation of Dirac/Weyl semimetals (DSMs/WSMs). However, such SOC-induced gap structure along the nodal line in TSMs has not yet been systematically investigated experimentally. Here, we report a direct observation of such gap structure in a magnetic WSM Co3Sn2S2 using high resolution angle-resolved photoemission spectroscopy. Our results not only reveal the existence and importance of the strong SOC effect in the formation of the WSM phase in Co3Sn2S2, but also provide insights for the understanding of its exotic physical properties., Comment: 12 pages, 4 figures

Gallium oxide with a corundum structure ({\alpha}-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\b{eta}-Ga2O3). However, the lower thermal stability of the {\alpha}-phase at ambient conditions in comparison with the \b{eta}-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion doping, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of {\alpha}-phase with inclusions of {\alpha}(\k{appa})-phase. It is established by the X-ray diffraction technique that inclusions of {\alpha}(\k{appa})-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the {\alpha}-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the {\alpha}-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient doping strategies.

In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1-x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono- to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1-x)Se2x, we performed a nano-angle resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1-x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1-x)Se2x opens the way for spectrally tunable light-emitting devices.

The interactions between electrons and antiferromagnetic magnons (AFMMs) are important for a large class of correlated materials. For example, they are the most plausible pairing glues in high-temperature superconductors, such as cuprates and iron pnictides. However, unlike electron-phonon interactions (EPIs), clear-cut observations regarding how electron-AFMM interactions (EAIs) affect the band structure are still lacking. Consequently, critical information on the EAIs, such as its strength and doping dependence, remains elusive. Here we directly observe that EAIs induces a kink structure in the band dispersion in Ba$_{1-x}$K$_x$Mn$_2$As$_2$, and subsequently unveil several key characteristics of EAIs. We found that the coupling constant of EAIs can be as large as 6, and it shows huge doping dependence and temperature dependence, all in stark contrast to the behaviors of EPI and beyond our current understanding of EAIs. Such a colossal renormalization of electronic bands by EAIs drives the system to the Stoner criteria, giving the intriguing ferromagnetic state in Ba$_{1-x}$K$_x$Mn$_2$As$_2$. Our results expand the current knowledge of EAIs, which may facilitate the further understanding of many correlated materials where EAIs play a critical role, such as high-temperature superconductors.

The recent rise of van der Waals (vdW) crystals has opened new prospects for studying versatile and exotic fundamental physics with future device applications such as twistronics. Even though the recent development on Angle-resolved photoemission spectroscopy (ARPES) with Nano-focusing optics, making clean surfaces and interfaces of chemically transferred crystals have been challenging to obtain high-resolution ARPES spectra. Here, we show that by employing nano-ARPES with submicron sized beam and polystyrene-assisted transfer followed by annealing process in ultra-high vacuum environment, remarkably clear ARPES spectral features such as spin-orbit splitting and band renormalization of CVD-grown, monolayered MoS2 can be measured. Our finding paves a way to exploit chemically transferred crystals for measuring high-resolution ARPES spectra to observe exotic quasi-particles in vdW heterostructures.

The pyrite compound CoS2 has been intensively studied in the past due to its itinerant ferromagnetism and potential for half-metallicity, which make it a promising material for spintronic applications. However, its electronic structure remains only poorly understood. Here we use complementary bulk- and surface-sensitive angle-resolved photoelectron spectroscopy and ab-initio calculations to provide a complete picture of its band structure. We discover Weyl-cones at the Fermi-level, which presents CoS2 in a new light as a rare member of the recently discovered class of magnetic topological metals. We directly observe the topological Fermi-arc surface states that link the Weyl-nodes, which will influence the performance of CoS2 as a spin-injector by modifying its spin-polarization at interfaces. Additionally, we are for the first time able to directly observe a minority-spin bulk electron pocket in the corner of the Brillouin zone, which proves that CoS2 cannot be a true half-metal. Beyond settling the longstanding debate about half-metallicity in CoS2, our results provide a prime example of how the topology of magnetic materials can affect their use in spintronic applications.

It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they are expected to give rise to totally new effects forbidden in other topological classes. Understanding how these unconventional quasiparticles propagate and interact is crucial for exploiting their potential in innovative chirality-driven device architectures. These aspects necessarily rely on the detection of handedness-dependent effects in the two enantiomers and remain largely unexplored so far. Here, we use scanning tunnelling microscopy to visualize the electronic properties of both enantiomers of the prototypical chiral topological semimetal PdGa at the atomic scale. We reveal that the surface-bulk connectivity goes beyond ensuring the existence of topological Fermi arcs, but also determines how quasiparticles propagate and scatter at impurities, giving rise to chiral quantum interference patterns of opposite handedness and opposite spiralling direction for the two different enantiomers, a direct manifestation of the change of sign of their Chern number. Additionally, we demonstrate that PdGa remains topologically non-trivial over a large energy range, experimentally detecting Fermi arcs in an energy window of more than 1.6 eV symmetrically centerd around the Fermi level. These results are rationalized in terms of the deep connection between chirality in real and reciprocal space in this class of materials, and they allow to identify PdGa as an ideal topological chiral semimetal.

We report angle-resolved photoemission spectroscopy and first-principles numerical calculations for the band structure evolution of the 3d heavy-fermion compound CaCu3Ru4O12. Below 200 K, we observed an emergent hybridization gap between the Cu 3d electron-like band and the Ru 4d hole-like band and the resulting flat band features near the Fermi energy centered around the Brillouin zone corner. Our results confirm the non-Kondo nature of CaCu3Ru4O12, in which the Cu 3dxy electrons are less correlated and not in the Kondo limit. Comparison between theory and experiment also suggests that other mechanism such as nonlocal interactions or spin fluctuations beyond the local dynamical mean-field theory may be needed in order to give a quantitative explanation of the peculiar properties in this material.

The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid's electronic, optical and chemical properties. Here we show that angle-resolved photoemission spectroscopy with a nano-scale light spot (nanoARPES) provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local non-equilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows non-invasive local measurements of the composition, structure, many-body effects and carrier mobility in the presence of high current densities., Comment: 9 pages, 8 figures

Weyl semimetals are crystalline solids that host emergent relativistic Weyl fermions and have characteristic surface Fermi-arcs in their electronic structure. Weyl semimetals with broken time reversal symmetry are difficult to identify unambiguously. In this work, using angle-resolved photoemission spectroscopy, we visualized the electronic structure of the ferromagnetic crystal Co3Sn2S2 and discovered its characteristic surface Fermi-arcs and linear bulk band dispersions across the Weyl points. These results establish Co3Sn2S2 as a magnetic Weyl semimetal that may serve as a platform for realizing phenomena such as chiral magnetic effects, unusually large anomalous Hall effect and quantum anomalous Hall effect., Comment: 15 pages, 4 figures

In this work we present Ludwig, a flexible, extensible and easy to use toolbox which allows users to train deep learning models and use them for obtaining predictions without writing code. Ludwig implements a novel approach to deep learning model building based on two main abstractions: data types and declarative configuration files. The data type abstraction allows for easier code and sub-model reuse, and the standardized interfaces imposed by this abstraction allow for encapsulation and make the code easy to extend. Declarative model definition configuration files enable inexperienced users to obtain effective models and increase the productivity of expert users. Alongside these two innovations, Ludwig introduces a general modularized deep learning architecture called Encoder-Combiner-Decoder that can be instantiated to perform a vast amount of machine learning tasks. These innovations make it possible for engineers, scientists from other fields and, in general, a much broader audience to adopt deep learning models for their tasks, concretely helping in its democratization.

Topological semimetals feature protected nodal band degeneracies characterized by a topological invariant known as the Chern number (C). Nodal band crossings with linear dispersion are expected to have at most |C|=4, which sets an upper limit to the magnitude of many topological phenomena in these materials. Here we show that the chiral crystal PdGa displays multifold band crossings, which are connected by exactly four surface Fermi-arcs, thus proving that they carry the maximal Chern number magnitude of 4. By comparing two enantiomers, we observe a reversal of their Fermi-arc velocities, which demonstrates that the handedness of chiral crystals can be used to control the sign of their Chern numbers., Comment: Accepted manuscript

Pressure represents a clean tuning parameter for traversing the complex phase diagrams of interacting electron systems and as such has proved of key importance in the study of quantum materials. Application of controlled uniaxial pressure has recently been shown to more than double the transition temperature of the unconventional superconductor Sr$_{2}$RuO$_{4}$ for example, leading to a pronounced peak in $T_\mathrm{c}$ vs. strain whose origin is still under active debate. Here, we develop a simple and compact method to apply large uniaxial pressures passively in restricted sample environments, and utilize this to study the evolution of the electronic structure of Sr$_{2}$RuO$_{4}$ using angle-resolved photoemission. We directly visualize how uniaxial stress drives a Lifshitz transition of the $\gamma$-band Fermi surface, pointing to the key role of strain-tuning its associated van Hove singularity to the Fermi level in mediating the peak in $T_\mathrm{c}$. Our measurements provide stringent constraints for theoretical models of the strain-tuned electronic structure evolution of Sr$_{2}$RuO$_{4}$. More generally, our novel experimental approach opens the door to future studies of strain-tuned phase transitions not only using photoemission, but also other experimental techniques where large pressure cells or piezoelectric-based devices may be difficult to implement.

Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures can be realized even within a single uniform sheet, merely by locally applying different vertical bias voltages. Indeed, it has been suggested that nanoscale electronic patterning in a single sheet can be achieved by placing the 2D material on a suitably pre-patterned substrate, exploiting the sensitivity of 2D materials to their environment via band alignment, screening or hybridization. Here, we utilize the inherently nano-structured single layer (SL) and bilayer (BL) graphene on silicon carbide to laterally tune the electrostatic gating of adjacent SL tungsten disulphide (WS$_2$) in a van der Waals heterostructure. The electronic band alignments are mapped in energy and momentum space using angle-resolved photoemission with a spatial resolution on the order of 500~nm (nanoARPES). We find that the SL WS$_2$ band offsets track the work function of the underlying SL and BL graphene, and we relate such changes to observed lateral patterns of exciton and trion luminescence from SL WS$_2$, demonstrating ultimate control of optoelectronic properties at the nanoscale., Comment: 13 pages, 3 figures

We revisit the electronic structure of BaFe$_2$As$_2$, the archetypal parent compound of the Fe-based superconductors, using angle-resolved photoemission spectroscopy (ARPES). Our high-resolution measurements of samples detwinned by the application of a mechanical strain reveal a highly anisotropic 3D Fermi surface in the low temperature magnetic phase. By comparison of the observed dispersions with ab-initio calculations, we argue that overall it is magnetism, rather than orbital ordering, which is the dominant effect, reconstructing the electronic structure across the Fe 3d bandwidth. Finally, we measure band dispersions directly from within one domain without applying strain to the sample, by using the sub-micron focused beam spot of a nano-ARPES instrument.

The electron dynamics in the CuO chains has been elusive in Y-Ba-Cu-O cuprate systems by means of standard angle-resolved photoemission spectroscopy (ARPES); cleaved sample exhibits areas terminated by both CuO-chain or BaO layers, and the size of a typical beam results in ARPES signals that are superposed from both terminations. Here, we employ spatially-resolved ARPES with submicrometric beam (nano-ARPES) to reveal the surface-termination-dependent electronic structures of the double CuO chains in YBa$_2$Cu$_4$O$_8$. We present the first observation of sharp metallic dispersions and Fermi surfaces of the double CuO chains buried underneath the CuO$_2$-plane block on the BaO terminated surface. While the observed Fermi surfaces of the CuO chains are highly one-dimensional, the electrons in the CuO-chains do not undergo significant electron correlations and no signature of a Tomonaga-Luttinger liquid nor a marginal Fermi liquid is found. Our works represent an important experimental step toward understanding of the charge dynamics and provides a starting basis for modelling the high-$T_c$ superconductivity in YBCO cuprate systems., Comment: 10 pages, 5 figures including supplementary material (4 pages, 2 figures)

The localized-to-itinerant transition of f electrons lies at the heart of heavy-fermion physics, but has only been directly observed in single-layer Ce-based materials. Here, we report a comprehensive study on the electronic structure and nature of the Ce 4f electrons in the heavy-fermion superconductor Ce2PdIn8, a typical n=2 CenMmIn3n+2m compound, using high-resolution and 4d-4f resonance photoemission spectroscopies. The electronic structure of this material has been studied over a wide temperature range, and hybridization between f and conduction electrons can be clearly observed to form a Kondo resonance near the Fermi level at low temperatures. The characteristic temperature of the localized-to-itinerant transition is around 120K, which is much higher than its coherence temperature Tcoh~30K., Comment: 5pages, 5 figures

The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.

Topological semimetals in crystals with a chiral structure (which possess a handedness due to a lack of mirror and inversion symmetries) are expected to display numerous exotic physical phenomena, including fermionic excitations with large topological charge [1], long Fermi arc surface states [2,3], unusual magnetotransport [4] and lattice dynamics [5], as well as a quantized response to circularly polarized light [6]. To date, all experimentally confirmed topological semimetals exist in crystals that contain mirror operations, meaning that these properties do not appear. Here, we show that AlPt is a structurally chiral topological semimetal that hosts new fourfold and sixfold fermions, which can be viewed as a higher spin eneralization of Weyl fermions without equivalence in elementary particle physics. These multifold fermions are located at high symmetry points and have Chern numbers larger than those in Weyl semimetals, thus resulting in multiple Fermi arcs that span the full diagonal of the surface Brillouin zone. By imaging these long Fermi arcs, we experimentally determine the magnitude and sign of their Chern number, allowing us to relate their dispersion to the handedness of their host crystal., Comment: Original journal submission date Aug 17th 2018, v2 is the accepted manuscript

Van der Waals heterostructures (VDWHs) exhibit rich properties and thus has potential for applications, and charge transfer between different layers in a heterostructure often dominates its properties and device performance. It is thus critical to reveal and understand the charge transfer effects in VDWHs, for which electronic structure measurements have proven to be effective. Using angle-resolved photoemission spectroscopy, we studied the electronic structures of (PbSe)1.16(TiSe2)m(m=1, 2), which are naturally occurring VDWHs, and discovered several striking charge transfer effects. When the thickness of the TiSe2 layers is halved from m=2 to m=1, the amount of charge transferred increases unexpectedly by more than 250%. This is accompanied by a dramatic drop in the electron-phonon interaction strength far beyond the prediction by first-principles calculations and, consequently, superconductivity only exists in the m=2 compound with strong electron-phonon interaction, albeit with lower carrier density. Furthermore, we found that the amount of charge transferred in both compounds is nearly halved when warmed from below 10 K to room temperature, due to the different thermal expansion coefficients of the constituent layers of these misfit compounds. These unprecedentedly large charge transfer effects might widely exist in VDWHs composed of metal-semiconductor contacts; thus, our results provide important insights for further understanding and applications of VDWHs., Comment: 6 Pages, 4 figures

We report the evolution of the $k$-space electronic structure of lightly doped bulk Ca$_{2}$RuO$_{4}$ with uniaxial strain. Using ultrathin plate-like crystals, we achieve strain levels up to $-4.1\%$, sufficient to suppress the Mott phase and access the previously unexplored metallic state at low temperature. Angle-resolved photoemission experiments performed while tuning the uniaxial strain reveal that metallicity emerges from a marked redistribution of charge within the Ru $t_{2g}$ shell, accompanied by a sudden collapse of the spectral weight in the lower Hubbard band and the emergence of a well defined Fermi surface which is devoid of pseudogaps. Our results highlight the profound roles of lattice energetics and of the multiorbital nature of Ca$_{2}$RuO$_{4}$ in this archetypal Mott transition and open new perspectives for spectroscopic measurements., Comment: To appear in Nature Communications

Bismuthates were the first family of oxide high-temperature superconductors, exhibiting superconducting transition temperatures (Tc) up to 32K, but the superconducting mechanism remains under debate despite more than 30 years of extensive research. Our angle-resolved photoemission spectroscopy studies on Ba$_{0.51}$K$_{0.49}$BiO$_3$ reveal an unexpectedly 34% larger bandwidth than in conventional density functional theory calculations. This can be reproduced by calculations that fully account for long-range Coulomb interactions --- the first direct demonstration of bandwidth expansion due to the Fock exchange term, a long-accepted and yet uncorroborated fundamental effect in many body physics. Furthermore, we observe an isotropic superconducting gap with 2\Delta$_0$/k$_B$ T$_c$ = 3.51 $\pm$ 0.05, and strong electron-phonon interactions with a coupling constant \lambda$\sim$ 1.3 $\pm$ 0.2. These findings solve a long-standing mystery --- Ba$_{0.51}$K$_{0.49}$BiO$_3$ is an extraordinary Bardeen-Cooper-Schrieffer (BCS) superconductor, where long-range Coulomb interactions expand the bandwidth, enhance electron-phonon coupling, and generate the high Tc. Such effects will also be critical for finding new superconductors., Comment: 14 pages, 4 Postscript figures

The major breakthroughs in the understanding of topological materials over the past decade were all triggered by the discovery of the Z$_2$ topological insulator (TI). In three dimensions (3D), the TI is classified as either "strong" or "weak", and experimental confirmations of the strong topological insulator (STI) rapidly followed the theoretical predictions. In contrast, the weak topological insulator has so far eluded experimental verification, since the topological surface states emerge only on particular side surfaces which are typically undetectable in real 3D crystals. Here we provide experimental evidence for the WTI state in a bismuth iodide, $\beta$-Bi4I4. Significantly, the crystal has naturally cleavable top and side planes both stacked via van-der-Waals forces, which have long been desirable for the experimental realization of the WTI state. As a definitive signature of it, we find quasi-1D Dirac TSS at the side-surface (100) while the top-surface (001) is topologically dark. Furthermore, a crystal transition from the $\beta$- to $\alpha$-phase drives a topological phase transition from a nontrivial WTI to the trivial insulator around room temperature. This topological phase, viewed as quantum spin Hall (QSH) insulators stacked three-dimensionally, and excellent functionality with on/off switching will lay a foundation for new technology benefiting from highly directional spin-currents with large density protected against backscattering., Comment: 18 pages, 4 figures

A key issue in heavy fermion research is how subtle changes in the hybridization between the 4$f$ (5$f$) and conduction electrons can result in fundamentally different ground states. CeRhIn$_5$ stands out as a particularly notable example: replacing Rh by either Co or Ir, located above or below Rh in the periodic table, antiferromagnetism gives way to superconductivity. In this photoemission study of CeRhIn$_5$, we demonstrate that the use of resonant ARPES with polarized light allows to extract detailed information on the 4$f$ crystal field states and details on the 4$f$ and conduction electron hybridization which together determine the ground state. We directly observe weakly dispersive Kondo resonances of $f$-electrons and identify two of the three Ce $4f_{5/2}^{1}$ crystal-electric-field levels and band-dependent hybridization, which signals that the hybridization occurs primarily between the Ce $4f$ states in the CeIn$_3$ layer and two more three-dimensional bands composed of the Rh $4d$ and In $5p$ orbitals in the RhIn$_2$ layer. Our results allow to connect the properties observed at elevated temperatures with the unusual low-temperature properties of this enigmatic heavy fermion compound., Comment: 6 pages, 5 figures

The minimal ingredients to explain the essential physics of layered copper-oxide (cuprates= materials remains heavily debated. Effective low energy single-band models of the copper-oxygen orbitals are widely used because there exists no strong experimental evidence supporting multiband structures. Here we report angle-resolved photoelectron spectroscopy experiments on La-based cuprates that provide direct observation of a two-band structure. This electronic structure, qualitatively consistent with density functional theory, is parametrised by a two-orbital ($d_{x^2-y^2}$ and $d_{z^2}$) tight-binding model. We quantify the orbital hybridisation which provides an explanation for the Fermi surface topology and the proximity of the van-Hove singularity to the Fermi level. Our analysis leads to a unification of electronic hopping parameters for single-layer cuprates and we conclude that hybridisation, restraining d-wave pairing, is an important optimisation element for superconductivity., Comment: supplementary material available on request

A synchrotron radiation beamline in the photon energy range of 18 - 240 eV and an electron spectroscopy end station have been constructed at the 3 GeV Diamond Light Source storage ring. The instrument features a variable polarisation undulator, a high resolution monochromator, a re-focussing system to form a beam spot of 50x50 micrometer^2 and an end station for angle-resolved photoelectron spectroscopy (ARPES) including a 6-degrees-of-freedom cryogenic sample manipulator. The beamline design and its performance allow for a highly productive and precise use of the ARPES technique at an energy resolution of 10 - 15 meV for fast k-space mapping studies with a photon flux up to 2 10^13 ph/sec and well below 3 meV for high resolution spectra., Comment: 10 pages, 11 figures

Heavy fermion materials gain high electronic masses and expand Fermi surfaces when the high-temperature localized f electrons become itinerant and hybridize with the conduction band at low temperatures. However, despite the common application of this model, direct microscopic verification remains lacking. Here we report high-resolution angle-resolved photoemission spectroscopy measurements on CeCoIn5, a prototypical heavy fermion compound, and reveal the long-sought band hybridization and Fermi surface expansion. Unexpectedly, the localized-to-itinerant transition occurs at surprisingly high temperatures, yet f electrons are still largely localized at the lowest temperature. Moreover, crystal field excitations likely play an important role in the anomalous temperature dependence. Our results paint an comprehensive unanticipated experimental picture of the heavy fermion formation in a periodic multi-level Anderson/Kondo lattice, and set the stage for understanding the emergent properties in related materials.

PtBi2 with a layered trigonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high resolution angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through careful comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states, allowing the estimation of the real stoichiometry of samples. We find significant electron doping in PtBi2, implying a substantial Bi deficiency induced disorder therein. We discover a Dirac-cone-like surface state on the boundary of the Brillouin zone, which is identified as an accidental Dirac band without topological protection. Our findings exclude quantum-limit-induced linear band dispersion as the cause of the unconventional large linear magnetoresistance., Comment: 5 pages, 5 figures

We report the surface electronic structure of niobium phosphide NbP single crystal on (001) surface by vacuum ultraviolet angle-resolved photoemission spectroscopy. Combining with our first principle calculations, we identify the existence of the Fermi arcs originated from topological surface states. Furthermore, the surface states exhibit circular dichroism pattern, which may correlate with its non-trivial spin texture. Our results provide critical evidence for the existence of the Weyl Fermions in NbP, which lays the foundation for further investigations., Comment: 5 pages, 4 figures

Using the compactified universal jacobian over the moduli space of stable marked curves, we give an expression in terms of natural classes of the zero section of the compactified universal jacobian the (rational) Chow ring. After extending variants of the Abel-Jacobi map to a locus containing curves of treelike type we give a formula for the pullback of the said zero section along these extensions. The same approach is also applied to recover known formulas for the pullback of theta divisors to the moduli space of marked stable curves., Comment: Added reference. Modifications brought to section 3.4. Comments are welcome!

The superconducting and magnetic properties of phase-separated A$_x$Fe$_{2-y}$Se$_2$ compounds are known to depend on post-growth heat treatments and cooling profiles. This paper focusses on the evolution of microstructure on annealing, and how this influences the superconducting properties of Rb$_x$Fe$_2-y$Se$_2$ crystals. We find that the minority phase in the as-grown crystal has increased unit cell anisotropy (c/a ratio), reduced Rb content and increased Fe content compared to the matrix. The microstructure is rather complex, with two-phase mesoscopic plate-shaped features aligned along {113} habit planes. The minority phase are strongly facetted on the {113} planes, which we have shown to be driven by minimising the volume strain energy introduced as a result of the phase transformation. Annealing at 488K results in coarsening of the mesoscopic plate-shaped features and the formation of a third distinct phase. The subtle differences in structure and chemistry of the minority phase(s) in the crystals are thought to be responsible for changes in the superconducting transition temperature. In addition, scanning photoemission microscopy has clearly shown that the electronic structure of the minority phase has a higher occupied density of states of the low binding energy Fe3d orbitals, characteristic of crystals that exhibit superconductivity. This demonstrates a clear correlation between the Fe-vacancy-free phase with high c/a ratio and the electronic structure characteristics of the superconducting phase., Comment: 6 figures v2 is exactly the same as v1. The typesetting errors in the abstract have been corrected

We revisit Ekedahl, Lando, Shapiro and Vainshtein's compactification of the stack of simply ramified covers of the projective line except for a fixed ramification profile above infinity. In particular we draw a connection with the Harris and Mumford stack of admissible covers showing that the boundary of the ELSV compactification appears as a contraction of the boundary of the stack of admissible covers. This lays the needed foundations for a combinatoral interpretation of boundary points of the ELSV compactification

A two-level quantum system coherently driven by a resonant electromagnetic field oscillates sinusoidally between the two levels at frequency $\Omega$ which is proportional to the field amplitude [1]. This phenomenon, known as the Rabi oscillation, has been at the heart of atomic, molecular and optical physics since the seminal work of its namesake and coauthors [2]. Notably, Rabi oscillations in isolated single atoms or dilute gases form the basis for metrological applications such as atomic clocks and precision measurements of physical constants [3]. Both inhomogeneous distribution of coupling strength to the field and interactions between individual atoms reduce the visibility of the oscillation and may even suppress it completely. A remarkable transformation takes place in the limit where only a single excitation can be present in the sample due to either initial conditions or atomic interactions: there arises a collective, many-body Rabi oscillation at a frequency $N^0.5\Omega$ involving all N >> 1 atoms in the sample [4]. This is true even for inhomogeneous atom-field coupling distributions, where single-atom Rabi oscillations may be invisible. When one of the two levels is a strongly interacting Rydberg level, many-body Rabi oscillations emerge as a consequence of the Rydberg excitation blockade. Lukin and coauthors outlined an approach to quantum information processing based on this effect [5]. Here we report initial observations of coherent many-body Rabi oscillations between the ground level and a Rydberg level using several hundred cold rubidium atoms. The strongly pronounced oscillations indicate a nearly complete excitation blockade of the entire mesoscopic ensemble by a single excited atom. The results pave the way towards quantum computation and simulation using ensembles of atoms.

Rydberg spin waves are optically excited in a quasi-one-dimensional atomic sample of Rb atoms. Pair-wise spin-wave correlations are observed by a spatially selective transfer of the quantum state onto a light field and photoelectric correlation measurements of the light. The correlations are interpreted in terms of the dephasing of multiply-excited spin waves by long-range Rydberg interactions.