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Excitons in quantum dots are excellent sources of polarization-entangled photon pairs, but a quantitative understanding of their interaction with the nuclear spin bath is still missing. Here we investigate the role of hyperfine energy shifts using experimentally accessible parameters and derive an upper limit to the achievable entanglement fidelity. Our results are consistent with all available literature, indicate that spin-noise is often the dominant process limiting the entanglement in InGaAs quantum dots, and suggest routes to alleviate its effect.

The quantification of the entanglement present in a physical system is of para\-mount importance for fundamental research and many cutting-edge applications. Currently, achieving this goal requires either a priori knowledge on the system or very demanding experimental procedures such as full state tomography or collective measurements. Here, we demonstrate that by employing neural networks we can quantify the degree of entanglement without needing to know the full description of the quantum state. Our method allows for direct quantification of the quantum correlations using an incomplete set of local measurements. Despite using undersampled measurements, we achieve a quantification error of up to an order of magnitude lower than the state-of-the-art quantum tomography. Furthermore, we achieve this result employing networks trained using exclusively simulated data. Finally, we derive a method based on a convolutional network input that can accept data from various measurement scenarios and perform, to some extent, independently of the measurement device., Comment: 10 pages, 5 figures, 1 table

The generation of photon pairs in single quantum dots is based on a process that is, in its nature, deterministic. However, an efficient extraction of these photon pairs from a high-index semiconductor host material requires engineering of the photonic environment. We report on a micropillar-based device featuring an extraction efficiency of 69.4(10)$\%$ that is achieved by harnessing a broadband operation suitable for extraction of photon pairs emitted from a single quantum dot. Opposing the approaches that rely solely on Purcell enhancement to realize the enhancement of the extraction efficiency, our solution exploits a suppression of the emission into the modes other than the cavity mode. Our technological implementation requires modest fabrication effort enabling higher device yields that can be scaled up to meet the growing needs of quantum technologies. Furthermore, the design of the device can be further optimized to allow for an extraction efficiency of 85$\%$.

We introduce a scalable photonic platform that enables efficient generation of entangled photon pairs from a semiconductor quantum dot. Our system, which is based on a self-aligned quantum dot-micro-cavity structure, erases the need for complex steps of lithography and nanofabrication. We experimentally show collection efficiency of 0.17 combined with a Purcell enhancement of up to 1.7 in the pair emission process. We harness the potential of our device to generate photon pairs entangled in time bin, reaching a fidelity of 0.84(5) with the maximally entangled state. The achieved pair collection efficiency is 4 times larger than the state-of-the art. The device, which theoretically supports pair extraction efficiencies of nearly 0.5 is a promising candidate for the implementation of bright sources of time-bin, polarization- and hyper entangled photon pairs in a straightforward manner., Comment: References corrected

The fluorescent nitrogen-vacancy (NV) defect in diamond has remarkable photophysical properties, including high photostability, which allows stable fluorescence emission for hours; as a result, there has been much interest in using nanodiamonds (NDs) for quantum optics and biological imaging. Such applications have been limited by the complexity and heterogeneity of ND photophysics. Photophysics of the NV center in NDs have been studied before, but the lack of a sensitive and high-throughput method has limited the characterization of NDs. Here is reported a systematic analysis of NDs using two-color wide-field epifluorescence imaging coupled to high-throughput single-particle detection of single NVs in NDs with sizes down to 5-10 nm. By using fluorescence intensity ratios, the charge conversion of single NV center (NV- or NV0) is observed and the lifetimes of different NV charge states in NDs is measured. The discovery of reversible manipulation of NV charge states by pH is also presented. In addition to provide another mechanism to control the NV charge state in nanodiamonds, our findings open the possibility to perform pH nanosensing with a non-photobleachable probe., Comment: Manuscript: 30 pages, 5 figures; supplementary information: 12 pages, 11 figures

In this paper, the controlled production of high quality metal-free diamond nanoparticles is demonstrated. Milling with tempered steel is shown to leave behind iron oxide contamination which is difficult to remove. Milling with SiN alleviates this issue but generates more non diamond carbon. Thus the choice of milling materials is critically determined by the acceptable contaminants in the ultimate application. The removal of metal impurities, present in all commercially available nanoparticles, will open new possibilities towards the production of customised diamond nanoparticles, covering the most demanding quantum applications.

The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that the SiV center in nanodiamond exhibits a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range of approximatly 730 nm to 742 nm and broad linewidths between 5 nm and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 nm and 835 nm, but narrow linewidths from below 1 nm up to 4 nm. Supported by ab initio Kohn-Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of modified SiV centers. Whereas single photon emission is demonstrated for SiV centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics.

In this paper the design of a simple, space constrained chemical vapour deposition reactor for diamond growth is detailed. Based on the design by NIRIM, the reactor is composed of a quartz discharge tube placed within a 2.45 GHz waveguide to create the conditions required for metastable growth of diamond. Utilising largely off-the-shelf components and a modular design, the reactor allows for easy modification, repair, and cleaning between growth runs. The elements of the reactor design are laid out with the CAD files, parts list, and control files made easily available to enable replication. Finally, the quality of nanocrystalline diamond films produced are studied with SEM and Raman spectroscopy, with the observation of clear faceting and a large diamond fraction suggesting the design offers deposition of diamond with minimal complexity.

The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to the alkaline SF1 polishing slurry. Three oxidizing agents namely, hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on the polished samples using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerates the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface.

Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows higher negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond films on GaN seeded with H-terminated diamond seeds produced fully coalesced films confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. This technique removes the requirement for a low thermal conduction seeding layer like silicon nitride on GaN.