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In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly strain-compensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77K are obtained. Second, from electronic band structure calculation, material parameters are extracted and compared for the different grown SLs. Finally, two p-i-n device structures with different SL periods are grown and their electrical performance compared. Our investigation shows that an alternative SL design could potentially be used to improve the device performance of diffusion-limited devices for long-wavelength infrared detection., Comment: 8 Figures

This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been explored during the growth. The first one consists of growing an intentional InSb layer at both interfaces (namely GaSb-on-InAs and InAs-on-GaSb interfaces) by migration enhanced epitaxy while the second uses the antimony-for-arsenic exchange to promote an InSb-like interface at the GaSb-on-InAs interface. SLs obtained via both methods are compared in terms of structural, morphological and optical properties by means of high-resolution x-ray diffraction, atomic force microscopy and photoluminescence spectroscopy. By using the second method, we obtained a nearly strain-compensated SL on GaSb with a full width at half maximum of 56 arcsec for the first-order SL satellite peak. Relatively smooth surface has been achieved with a root mean square value of about 0.19 nm on a 2 $\mu m$ x 2 $\mu m$ scan area. Finally, a p-i-n device structure having a cut-off wavelength of 5.15 $\mu m$ at 77K has been demonstrated with a dark-current level of $8.3 * 10^{-8} A/cm^2$ at -50 mV and a residual carrier concentration of $9.7 * 10^{14} cm^{-3}$, comparable to the state-of-the-art., Comment: 8 figures

Calculations of the potential energy surface for tracer Ga and In adatoms above three GaAs (111)A surface reconstructions are presented in order to understand the growth conditions required to form axial heterostructures in GaAs/InGaAs nano-pillars. In all calculations the Ga adatom has a stronger bond energy to the surface than the In adatom. The diffusion barriers for Ga adatoms are 140meV larger than for In adatoms on the Ga vacancy surface, but they are comparable on the As trimer surface. Also the binding energy for an In adatom is closer to that of a Ga adatom on the As trimer surface. We conclude that the As trimer surface is preferable for adsorption of In and thus for selective formation of hetero-interfaces on (111) facets. This work helps explain the recent successful formation of axial GaAs/InGaAs hetero-interfaces in catalyst free nano-pillars., Comment: 4 pages, 5 figures, 1 table