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First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of monolayer WSe$_2$ in a magnetic field. We resolve a sequence of first-order phase transitions between completely spin-polarized LLs and states with LLs of both spins. Unexpectedly, the LL gaps are roughly constant over a wide range of magnetic fields below the transitions, which we show reflects a preference for opposite spin excitations of the spin-polarized ground state. These transitions also extend into compressible regimes, with a sawtooth boundary between full and partial spin polarization. We link these observations to the important influence of LL filling on the exchange energy beyond a smooth density-dependent contribution. Our results show that WSe$_2$ realizes a unique hierarchy of energy scales where such effects induce re-entrant magnetic phase transitions tuned by density and magnetic field.

Excitons -- quasiparticles formed by the binding of an electron and a hole through electrostatic attraction -- hold promise in the fields of quantum light confinement and optoelectronic sensing. Atomically thin transition metal dichalcogenides (TMDs) provide a versatile platform for hosting and manipulating excitons, given their robust Coulomb interactions and exceptional sensitivity to dielectric environments. In this study, we introduce a cryogenic scanning probe photoelectrical sensing platform, termed exciton-resonant microwave impedance microscopy (ER-MIM). ER-MIM enables ultra-sensitive probing of exciton polarons and their Rydberg states at the nanoscale. Utilizing this technique, we explore the interplay between excitons and material properties, including carrier density, in-plane electric field, and dielectric screening. Furthermore, we employ deep learning for automated data analysis and quantitative extraction of electrical information, unveiling the potential of exciton-assisted nano-electrometry. Our findings establish an invaluable sensing platform and readout mechanism, advancing our understanding of exciton excitations and their applications in the quantum realm.

Semiconductor moir\'e superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moir\'e wavelength, where interactions are most dominant. Here, we conduct local electronic compressibility measurements of twisted bilayer WSe$_2$ (tWSe$_2$) at small twist angles. We demonstrate multiple topological bands which host a series of Chern insulators at zero magnetic field near a 'magic angle' around $1.23^\circ$. Using a locally applied electric field, we induce a topological quantum phase transition at one hole per moir\'e unit cell. Our work establishes the topological phase diagram of a generalized Kane-Mele-Hubbard model in tWSe$_2$, demonstrating a tunable platform for strongly correlated topological phases., Comment: This is the author's version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science 384 (doi below)

The emergence of moir\'e materials with flat bands provides a platform to systematically investigate and precisely control correlated electronic phases. Here, we report local electronic compressibility measurements of a twisted WSe$_2$/MoSe$_2$ heterobilayer which reveal a rich phase diagram of interpenetrating Hofstadter states and electron solids. We show that this reflects the presence of both flat and dispersive moir\'e bands whose relative energies, and therefore occupations, are tuned by density and magnetic field. At low densities, competition between moir\'e bands leads to a transition from commensurate arrangements of singlets at doubly occupied sites to triplet configurations at high fields. Hofstadter states (i.e., Chern insulators) are generally favored at high densities as dispersive bands are populated, but are suppressed by an intervening region of reentrant charge-ordered states in which holes originating from multiple bands cooperatively crystallize. Our results reveal the key microscopic ingredients that favor distinct correlated ground states in semiconductor moir\'e systems, and they demonstrate an emergent lattice model system in which both interactions and band dispersion can be experimentally controlled.

Moir\'e superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. While the valley character of the low-energy states dramatically affects optoelectronic properties in the constituent TMDs, this degree of freedom has yet to be fully explored in moir\'e systems. Here, we establish twisted double bilayer WSe$_2$ as an experimental platform to study electronic correlations within $\Gamma$-valley moir\'e bands. Through a combination of local and global electronic compressibility measurements, we identify charge-ordered phases at multiple integer and fractional moir\'e band fillings $\nu$. By measuring the magnetic field dependence of their energy gaps and the chemical potential upon doping, we reveal spin-polarized ground states with novel spin polaron quasiparticle excitations. In addition, an applied displacement field allows us to realize a new mechanism of metal-insulator transition at $\nu = -1$ driven by tuning between $\Gamma$- and $K$-valley moir\'e bands. Together, our results demonstrate control over both the spin and valley character of the correlated ground and excited states in this system.

Nonabelian anyons offer the prospect of storing quantum information in a topological qubit protected from decoherence, with the degree of protection determined by the energy gap separating the topological vacuum from its low lying excitations. Originally proposed to occur in quantum wells in high magnetic fields, experimental systems thought to harbor nonabelian anyons range from p-wave superfluids to superconducting systems with strong spin orbit coupling. However, all of these systems are characterized by small energy gaps, and despite several decades of experimental work, definitive evidence for nonabelian anyons remains elusive. Here, we report the observation of arobust, incompressible even-denominator fractional quantum Hall phase in a new generation of dual-gated, hexagonal boron nitride encapsulated bilayer graphene samples. Numerical simulations suggest that this state is in the Pfaffian phase and hosts nonabelian anyons, and the measured energy gaps are several times larger than those observed in other systems. Moreover, the unique electronic structure of bilayer graphene endows the electron system with two new control parameters. Magnetic field continuously tunes the effective electron interactions, changing the even-denominator gap non-monotonically and consistent with predictions that a transition between the Pfaffian phase and the composite Fermi liquid (CFL) occurs just beyond the experimentally explored magnetic field range. Electric field, meanwhile, tunes crossings between levels from different valleys. By directly measuring the valley polarization, we observe a continuous transition from an incompressible to a compressible phase at half-filling mediated by an unexpected incompressible, yet polarizable, intermediate phase. Valley conservation implies this phase is an electrical insulator with gapless neutral excitations., Comment: Considerably expanded and rewritten. New experimental data from two additional devices, including transport data and thermodynamic gap measurements up to 35T. Theoretical model updated to include screening from filled Landau levels. Experimental and numerical methods section greatly expanded. Paper, including Methods and supplementary data totals 27 pages with 20 figures, 3 tables