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Symmetry breaking in quantum materials is of great importance and can lead to nonreciprocal charge transport. Topological insulators provide a unique platform to study nonreciprocal charge transport due to their surface states, especially quantum Hall states under external magnetic field. Here, we report the observation of nonreciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant nonreciprocal coefficient of up to 2.26*10^5 A^-1 is found. Our work not only reveals the properties of nonreciprocal charge transport of quantum Hall states in topological insulators, but also paves the way for future electronic devices.

By transmitting task-related information only, semantic communications yield significant performance gains over conventional communications. However, the lack of mature semantic theory about semantic information quantification and performance evaluation makes it challenging to perform resource allocation for semantic communications, especially when multiple tasks coexist in the network. To cope with this challenge, we propose a quality-of-experience (QoE) based semantic-aware resource allocation method for multi-task networks in this paper. First, semantic entropy is defined to quantify the semantic information for different tasks, and the relationship between semantic entropy and Shannon entropy is analyzed. Then, we develop a novel QoE model to formulate the semantic-aware resource allocation in terms of semantic compression, channel assignment, and transmit power. The compatibility of the formulated problem with conventional communications is further demonstrated. To solve this problem, we decouple it into two subproblems and solved them by a developed deep Q-network (DQN) based method and a proposed low-complexity matching algorithm, respectively. Finally, simulation results validate the effectiveness and superiority of the proposed method, as well as its compatibility with conventional communications., Comment: This work has been accepted by IEEE Transactions on Wireless Communications. arXiv admin note: text overlap with arXiv:2205.14530

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.