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Thermo-mechanical analysis (TMA) is typically employed for measurements of the glass transition temperature (Tg) and coefficients of thermal expansion (CTE) in molding compounds used in plastic encapsulated microcircuits (PEMs). Application of TMA measurements directly to PEMs allows anomalies to be revealed in deformation of packages with temperature, and thus indicates possible reliability concerns related to thermo-mechanical integrity and stability of the devices. In this work, temperature dependencies of package deformation were measured in several types of PEMs that failed environmental stress testing including temperature cycling, highly accelerated stress testing (HAST) in humid environments, and bum-in (BI) testing. Comparison of thermo-mechanical characteristics of packages and molding compounds in the failed parts allowed for explanation of the observed failures. The results indicate that TMA of plastic packages might be used for quality evaluation of PEMs intended for high-reliability applications.

Data retention and fatigue characteristics of 64 Kb lead zirconate titanate (PZT)-based Ferroelectric Random Access Memories (FRAMs) microcircuits manufactured by Ramtron were examined over temperature range from -85 C to +310 C for ceramic packaged parts and from -85 C to +175 C for plastic parts, during retention periods up to several thousand hours. Intrinsic failures, which were caused by a thermal degradation of the ferroelectric cells, occurred in ceramic parts after tens or hundreds hours of aging at temperatures above 200 C. The activation energy of the retention test failures was 1.05 eV and the extrapolated mean-time-to-failure (MTTF) at room temperature was estimated to be more than 280 years. Multiple write-read cycling (up to 3x10(exp 7)) during the fatigue testing of plastic and ceramic parts did not result in any parametric or functional failures. However, operational currents linearly decreased with the logarithm of number of cycles thus indicating fatigue process in PZT films. Plastic parts, that had more recent date code as compared to ceramic parts, appeared to be using die with improved process technology and showed significantly smaller changes in operational currents and data access times.

Microelectromechanical systems in MEMS is one of the fastest growing technologies in microelectronics, and is of great interest for military and aerospace applications. Accelerometers are the earliest and most developed representatives of MEMS. First demonstrated in 1979, micromachined accelerometers were used in automobile industry for air bag crash- sensing applications since 1990. In 1999, N4EMS accelerometers were used in NASA-JPL Mars Microprobe. The most developed accelerometers for airbag crash- sensing are rated for a full range of +/- 50 G. The range of sensitivity for accelerometers required for military or aerospace applications is much larger, varying from 20,000 G (to measure acceleration during gun and ballistic munition launches), and to 10(exp -6) G, when used as guidance sensors (to measure attitude and position of a spacecraft). The presence of moving parts on the surface of chip is specific to MEMS, and particularly, to accelerometers. This characteristic brings new reliability issues to micromachined accelerometers, including cyclic fatigue cracking of polysilicon cantilevers and springs, mechanical stresses that are caused by packaging and contamination in the internal cavity of the package. Studies of fatigue cracks initiation and growth in polysilicon showed that the fatigue damage may influence MEMS device performance, and the presence of water vapor significantly enhances crack initiation and growth. Environmentally induced failures, particularly, failures due to thermal cycling and mechanical shock are considered as one of major reliability concerns in MEMS. These environmental conditions are also critical for space applications of the parts. For example, the Mars pathfinder mission had experienced 80 mechanical shock events during the pyrotechnic separation processes.

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs (Ferroelectric random access memories) is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

This paper reports the results of low dose rate (0.01-0.18 rads(Si)/sec) total ionizing dose (TID) tests performed on several types of high performance converters. The parts used in this evaluation represented devices such as a high speed flash converter, a 16-bit ADC and a voltage-to-frequency converter.